Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US17499166Application Date: 2021-10-12
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Publication No.: US11784147B2Publication Date: 2023-10-10
- Inventor: Takuya Nakamura
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: CHIP LAW GROUP
- Priority: JP 17227414 2017.11.28
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L27/146

Abstract:
A semiconductor device includes a pad, a diffusion layer, and a melting layer. The pad included by the semiconductor device includes a concave portion on a surface at which solder connection is to be performed. The diffusion layer included by the semiconductor device is disposed at the concave portion and constituted with a metal which remains on the surface of the pad while diffusing into solder upon the solder connection. The melting layer included by the semiconductor device is disposed adjacent to the diffusion layer and constituted with a metal which diffuses and melts into the solder upon the solder connection.
Public/Granted literature
- US20220139853A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2022-05-05
Information query
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