-
公开(公告)号：US11492722B2
公开(公告)日：2022-11-08
申请号：US16343611
申请日：2017-11-17
发明人： Masahiro Sato , Machiko Kametani , Jun Ogi , Yuri Kato
IPC分类号： C25D21/12 , G01N27/30 , G01R29/12 , H03F1/52 , G01N33/487 , G01N27/416
摘要： The present disclosure relates to a semiconductor apparatus and a potential measuring apparatus capable of preventing deterioration in signal characteristics due to parasitic capacitance caused by providing a configuration for realizing an electrode plating process when an electrode and an amplifier are provided on the same substrate. When a power source supplies a potential necessary for plating processing and a breaker reads a signal from liquid, and an amplifier amplifies and outputs the signal, the power source required for the plating processing is blocked with respect to the electrode. This is applicable to the potential measuring apparatus.
-
公开(公告)号：US11125716B2
公开(公告)日：2021-09-21
申请号：US15761693
申请日：2016-08-09
发明人： Jun Ogi , Yusuke Oike
IPC分类号： G01N27/416 , G01N27/30 , G01N27/403 , G01N27/27 , G01N33/483 , G01N33/487
摘要： A potential measurement device includes a plurality of read-out electrodes arranged in an array shape and that detects a potential at a potential generation point generated due to a chemical change, and a reference electrode that detects a reference potential. The reference electrode is arranged within the array of the read-out electrodes. With this configuration, a low-noise potential measurement device in which noise superimposed on a wire from each of the read-out electrodes to an amplifier and noise superimposed on a wire from the reference electrode to the amplifier, i.e., wiring noise, can be reduced is achieved.
-
3.发明授权公开(公告)号：US09997552B2
公开(公告)日：2018-06-12
申请号：US15508561
申请日：2015-08-28
发明人： Susumu Inoue , Kentaro Akiyama , Junichiro Fujimagari , Keita Ishikawa , Jun Ogi , Yukio Tagawa , Takuya Nakamura , Satoru Wakiyama
IPC分类号： H01L31/0232 , H01L27/146 , H04N5/369
CPC分类号： H01L27/14618 , H01L27/14 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L2224/16225 , H01L2224/27013 , H01L2224/32225 , H01L2224/73204 , H04N5/369 , H01L2924/00
摘要： The present technology relates to a solid-state imaging device, an imaging apparatus, an electronic apparatus, and a semiconductor device, which can prevent overflow of an underfilling resin filled in a portion adapted to connect the substrate to the flip chip and can prevent secondary damages such as electric short-circuit and contact with processing equipment. By utilizing a molding technology of forming an on-chip lens, a dam is formed in a ring shape or a square shape in a manner surrounding a range where a flip chip is connected via a solder bump on an upper layer of a substrate of the solid-state imaging device and provided in order to form the on-chip lens. This can block the underfilling resin filled in the range where the substrate and the flip chip are electrically connected. The present technology can be applied to a solid-state imaging device.
-
公开(公告)号：US20230358608A1
公开(公告)日：2023-11-09
申请号：US18332215
申请日：2023-06-09
发明人： Hongbo Zhu , Kazuki Hizu , Takafumi Takatsuka , Yusuke Oike , Jun Ogi , Yoshiaki Tashiro
CPC分类号： G01J1/44 , G01J11/00 , H03K23/58 , H01L31/02027 , G01J2001/448 , G02B5/20
摘要： A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.
-
公开(公告)号：US11424281B2
公开(公告)日：2022-08-23
申请号：US16987745
申请日：2020-08-07
发明人： Jun Ogi , Yoshiaki Tashiro , Takahiro Toyoshima , Yorito Sakano , Yusuke Oike , Hongbo Zhu , Keiichi Nakazawa , Yukari Takeya , Atsushi Okuyama , Yasufumi Miyoshi , Ryosuke Matsumoto , Atsushi Horiuchi
IPC分类号： H01L31/00 , H01L27/146 , H04N5/369 , H01L31/107
摘要： To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
-
公开(公告)号：US20230384431A1
公开(公告)日：2023-11-30
申请号：US18044827
申请日：2021-09-13
发明人： Jun Ogi
IPC分类号： G01S7/4863 , G01S17/10
CPC分类号： G01S7/4863 , G01S17/10 , G01S17/931
摘要： A light receiving device according to an embodiment of the present disclosure includes a stacked chip structure including a pixel chip and a circuit chip that are stacked. In the pixel chip, a light receiving element is provided. The light receiving element generates a signal in accordance with reception of a photon. In the circuit chip, a circuit section that is included in a readout circuit is disposed along a direction perpendicular to a substrate surface of the circuit chip with respect to an electrical coupling section between the pixel chip and the circuit chip. The readout circuit reads the signal generated by the light receiving element.
-
公开(公告)号：US20220155153A1
公开(公告)日：2022-05-19
申请号：US17428408
申请日：2020-03-06
发明人： Hongbo Zhu , Kazuki Hizu , Takafumi Takatsuka , Yusuke Oike , Jun Ogi , Yoshiaki Tashiro
摘要： A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.
-
公开(公告)号：US10852292B2
公开(公告)日：2020-12-01
申请号：US16343598
申请日：2017-11-17
发明人： Masahiro Sato , Machiko Kametani , Jun Ogi , Yuri Kato
IPC分类号： G01N33/483 , G01N27/27 , G01N27/30 , G01N33/487 , H01L27/02 , H03F1/52
摘要： The present disclosure relates to a semiconductor apparatus and a potential measuring apparatus capable of preventing electrostatic breakdown in an electrode formation process when an electrode and an amplifier are provided on a same substrate. A diode is provided of which a cathode is connected to a previous stage of an amplifying transistor for amplifying a signal read by a read electrode for reading a potential having contact with liquid in which a specimen is input and an anode is grounded. With such a configuration, by bypassing a negative charge generated between the electrode and the amplifying transistor in the electrode formation process from the diode and discharging the negative charge toward ground so as to prevent electrostatic breakdown. This is applicable to a bioelectric potential measuring apparatus.
-
公开(公告)号：US10777597B2
公开(公告)日：2020-09-15
申请号：US16301877
申请日：2018-03-20
发明人： Jun Ogi , Yoshiaki Tashiro , Takahiro Toyoshima , Yorito Sakano , Yusuke Oike , Hongbo Zhu , Keiichi Nakazawa , Yukari Takeya , Atsushi Okuyama , Yasufumi Miyoshi , Ryosuke Matsumoto , Atsushi Horiuchi
IPC分类号： H01L27/146 , H04N5/369 , H01L31/107
摘要： To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
-
公开(公告)号：US11754610B2
公开(公告)日：2023-09-12
申请号：US16646185
申请日：2018-08-14
发明人： Jun Ogi , Yuri Kato , Naohiko Kimizuka , Yoshihisa Matoba , Kan Shimizu
IPC分类号： G01R29/24 , G01N27/414
CPC分类号： G01R29/24 , G01N27/4145
摘要： To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.016 秒)
