公开(公告)号：US12163992B2

公开(公告)日：2024-12-10

申请号：US18448517

申请日：2023-08-11

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Jun Ogi ,  Yuri Kato ,  Naohiko Kimizuka ,  Yoshihisa Matoba ,  Kan Shimizu

IPC: G01R29/24 ,  G01N27/414

Abstract: To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.

公开(公告)号：US11754610B2

公开(公告)日：2023-09-12

申请号：US16646185

申请日：2018-08-14

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Jun Ogi ,  Yuri Kato ,  Naohiko Kimizuka ,  Yoshihisa Matoba ,  Kan Shimizu

IPC: G01R29/24 ,  G01N27/414

CPC classification number: G01R29/24 ,  G01N27/4145

Abstract: To achieve decreased noise and improved sensitivity by reducing parasitic capacitance in a charge detection sensor. The charge detection sensor includes a detection element, a detection electrode, and a contact. The detection element is provided on one surface of a semiconductor substrate and detects a charge. The detection electrode is provided on another surface different from the one surface of the semiconductor substrate. The contact penetrates the semiconductor substrate and electrically connects the detection electrode and the detection element. Since no wiring layer is formed between the detection element and the detection electrode, the parasitic capacitance is reduced.