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154 条记录 (耗时 0.043 秒)

    Storage element and memory
    2.
    发明授权
    Storage element and memory 有权

    公开(公告)号：US10862024B2

    公开(公告)日：2020-12-08

    申请号：US16654596

    申请日：2019-10-16

    申请人： Sony Corporation

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： H01L43/10 ,  H01F10/32 ,  H01F41/32 ,  B82Y25/00 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22

    摘要： A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

    Storage device, manufacturing method therefor, and storage apparatus
    3.
    发明授权
    Storage device, manufacturing method therefor, and storage apparatus 有权

    公开(公告)号：US10861522B2

    公开(公告)日：2020-12-08

    申请号：US16426237

    申请日：2019-05-30

    申请人： SONY CORPORATION

    发明人： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  G11C11/56 ,  H01L43/12 ,  H01F10/32 ,  H01L27/22 ,  G11B5/39

    摘要： Provided is a storage device that includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer has magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer. The storage layer includes an outer circumferential portion and a center portion. The storage layer is disposed to face the magnetization fixed layer with the intermediate layer sandwiched therebetween, and is configured to have a variable magnetization direction. The outer circumferential portion has magnetization in an orientation perpendicular to a film surface, the center portion is formed by being surrounded by the outer circumferential portion and having magnetization inclined from the orientation perpendicular to the film surface.

    STORAGE ELEMENT AND MEMORY
    5.
    发明申请
    STORAGE ELEMENT AND MEMORY 审中-公开

    公开(公告)号：US20200052195A1

    公开(公告)日：2020-02-13

    申请号：US16654596

    申请日：2019-10-16

    申请人： Sony Corporation

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01F10/32 ,  B82Y25/00 ,  H01F41/32

    摘要： A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

    Memory element and memory device
    6.
    发明授权
    Memory element and memory device 有权

    公开(公告)号：US10128435B2

    公开(公告)日：2018-11-13

    申请号：US15047311

    申请日：2016-02-18

    申请人： Sony Corporation

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC分类号： H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08

    摘要： There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

    Magnetic memory device and element
    9.
    发明授权
    Magnetic memory device and element 有权

    公开(公告)号：US09735343B2

    公开(公告)日：2017-08-15

    申请号：US14590339

    申请日：2015-01-06

    申请人： Sony Corporation

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC分类号： G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.