- 专利标题: STORAGE ELEMENT AND STORAGE APPARATUS
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申请号: US15658862申请日: 2017-07-25
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公开(公告)号: US20170324026A1公开(公告)日: 2017-11-09
- 发明人: Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
- 申请人: Sony Corporation
- 优先权: JP2011-261520 20111130
- 主分类号: H01L43/02
- IPC分类号: H01L43/02 ; H01L27/22 ; H01F10/32 ; G11B5/39 ; G11C11/16 ; G11C11/155 ; G11C11/15 ; H01L43/08
摘要:
A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
公开/授权文献
- US09997698B2 Storage element and storage apparatus 公开/授权日:2018-06-12
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