摘要:
Memory systems may include a memory including a plurality of blocks, and a controller suitable for determining a pool of blocks from the plurality of blocks as garbage collection (GC) victim block candidates based on a number of valid pages left in each of the plurality of blocks, and selecting a block from the pool of blocks having a minimum number of valid pages as a victim block for garbage collection.
摘要:
Systems for performing turbo product code decoding includes an error intersection identifier determining a set of one or more error intersections using a set of error-containing codewords, and updating, based at least in part on Chase decoding performed on the set of error-containing codewords, the set of error intersections to obtain an updated set of one or more error intersections, a bit location selector suitable for selecting, from the set of error intersections, a set of one or more least reliable bit locations using soft information associated with the set of error-containing codewords, and a Chase decoder performing Chase decoding on the set of error-containing codewords based on a first value being a number of least reliable bit locations and a second value being a maximum number of allowable flips allowed out of the number of least reliable bit locations.
摘要:
It is determined that a read count has reached one of a set of read count thresholds. An initial test page which corresponds to the read count threshold that has been reached is selected from a set of initial test pages. There is at least one page that is not in the set of initial test pages and is victimized by an offending page that also victimizes a page in the set of initial test pages. A test read is performed on the selected test page and the results of the test read of the selected test page are evaluated for read disturb noise.
摘要:
A hinge path is used to determine if a first possible root is a root of an error location polynomial. A positive limb path is used to determine if a second possible root is a root of the error location polynomial, including by using a sequence of coefficients associated with the error location polynomial. The sequence of coefficients is reversed and a negative limb path is used to determine if a third possible root is a root of the error location polynomial, including by using the reversed sequence of coefficients, wherein the negative limb path is a copy of the positive limb path.
摘要:
A set of one or more component syndromes associated with a turbo product code (TPC) codeword is obtained from a component syndrome buffer. Component decoding is performed on the set of one or more component syndromes.
摘要:
Information associated with a read to solid state storage is received, including a read number and a read value. The read value is written to a location in a cell and bin map, wherein (1) the location in the cell and bin map corresponds to the read number and (2) the cell and bin map tracks, for each cell in a group of cells, which bin out of a plurality of bins a given cell falls into.
摘要:
Systems may include a memory storage suitable for storing data, an encoder suitable for encoding data into codewords arranged in an array of a number of rows and a number of columns, and a decoder suitable for receiving the encoded codewords, decoding the encoded codewords, and detecting miscorrections in the decoding.
摘要:
A method for decoding low-density parity check (LDPC) codes, includes computing an initial syndrome of an initial output, obtaining an initial number of unsatisfied checks based on the computed initial syndrome, and when the initial number of unsatisfied checks is greater than zero, computing a reliability value with a parity check, performing a bit flip operation, computing a subsequent syndrome of a subsequent output, and ending decoding when a number of unsatisfied checks obtained based on the computed subsequent syndrome is equal to zero.
摘要:
Memory systems may include a memory including a plurality of wordlines, each wordline including a plurality of cells, and a controller suitable for obtaining an initial voltage threshold and a target state for each of the plurality of cells, applying a pulse based on a pulse value to the plurality of cells, and calculating at least one coupling effect to neighboring cells.
摘要:
A type of data relocation to perform on a group of solid state storage cells is selected from a group that includes garbage collection and wear leveling. Source blocks in the group of solid state storage cells are identified using the selected type of data relocation. The source blocks are read in order to obtain relocated data and the relocated data is stored in an open block in the group of solid state storage cells. Relocated data associated with the selected type of data relocation is stored in the open block and relocated data associated with the unselected type of data relocation is excluded from the open block.