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公开(公告)号：US20200340806A1
公开(公告)日：2020-10-29
申请号：US16808637
申请日：2020-03-04
发明人： Tsutomu OGIHARA , Tsukasa WATANABE , Yoshio KAWAI , Tomohiro KOBAYASHI , Yusuke BIYAJIMA , Masahiro KANAYAMA
摘要： A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.
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公开(公告)号：US20140199630A1
公开(公告)日：2014-07-17
申请号：US14103462
申请日：2013-12-11
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , C07C309/06 , C07C381/12 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： A sulfonium salt used in a resist composition which gives a pattern having a high resolution, and small roughness in the photolithography using a high energy beam as a light source, and further difficultly eluted in water in the immersion lithography, and a resist composition containing the sulfonium salt, and a patterning process using the resist composition, wherein the sulfonium salt is represented by the following general formula (1a), wherein R represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms at least one or more of the hydrogen atoms of which are substituted by a fluorine atom, R0 represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be substituted by a halogen atom, or interposed by a heteroatom.
摘要翻译： 在抗蚀剂组合物中使用的锍盐，其使用高能量束作为光源，并且在浸渍光刻中在水中进一步难以洗脱而得到具有高分辨率的图案和在光刻中的粗糙度小的抗蚀剂组合物，以及含有 锍盐和使用抗蚀剂组合物的图案化方法，其中锍盐由以下通式（1a）表示，其中R表示具有1至30个碳原子的直链，支链或环状的一价烃基，至少一个或多个 更多的氢原子被氟原子取代，R 0表示氢原子，或可被卤素原子取代的具有1〜30个碳原子的直链，支链或环状一价烃基， 杂原子。
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公开(公告)号：US20240361691A1
公开(公告)日：2024-10-31
申请号：US18635945
申请日：2024-04-15
IPC分类号： G03F7/039
CPC分类号： G03F7/0392
摘要： The present invention is a resist material containing: a repeating unit-a containing at least one iodine atom between a polymer main chain and a carboxylate; and a repeating unit-b, being a sulfonium salt or iodonium salt of a sulfonic acid bonded to a polymer main chain. This provides: a resist material having higher sensitivity and higher resolution than conventional positive resist materials, small edge roughness and size variation, and excellent pattern profile after exposure; a resist composition containing the resist material; and a patterning process.
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公开(公告)号：US20230280651A1
公开(公告)日：2023-09-07
申请号：US18197244
申请日：2023-05-15
发明人： Teppei ADACHI , Shinya YAMASHITA , Masaki OHASHI , Tomohiro KOBAYASHI , Kenichi OIKAWA , Takayuki FUJIWARA
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/11 , C07D307/93 , C07D493/18 , C07D327/04 , C08F220/18 , C07C381/12
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0397 , G03F7/11 , C07D307/93 , C07D493/18 , C07D327/04 , C08F220/1807 , C08F220/1808 , C07C381/12 , G03F7/2006
摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
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5.发明申请PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权聚合物，结晶聚合物，耐腐蚀组合物和方法的制备公开(公告)号：US20130224660A1
公开(公告)日：2013-08-29
申请号：US13768861
申请日：2013-02-15
CPC分类号： C08F14/185 , C08F8/00 , C08F220/18 , C08F220/20 , C08F220/28 , C08F2800/10 , C08F2810/50 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/20 , G03F7/2041 , C08F2220/283 , C08F2220/382 , C08F222/20
摘要： A sulfonic acid anion-containing polymer having a triarylsulfonium cation is prepared by (1) preparing a sulfonic acid anion-containing polymer having an ammonium or metal cation not bound thereto, (2) purifying the polymer by water washing or crystallization, and (3) then reacting the polymer with a triarylsulfonium salt. A resist composition comprising the inventive polymer is effective for controlling acid diffusion since the sulfonium salt is bound to the polymer backbone.
摘要翻译： 具有三芳基锍阳离子的含磺酸阴离子的聚合物通过以下步骤制备：（1）制备具有未结合铵或金属阳离子的含磺酸阴离子的聚合物，（2）通过水洗或结晶纯化聚合物，和（3 ）然后使聚合物与三芳基锍盐反应。 包含本发明聚合物的抗蚀剂组合物对于控制酸扩散是有效的，因为锍盐与聚合物主链结合。
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公开(公告)号：US20210063873A1
公开(公告)日：2021-03-04
申请号：US16935615
申请日：2020-07-22
摘要： The present invention is a resist material containing: (i) a compound (i-1), which is a (partial) condensate or a (partial) hydrolysis-condensate of a metal compound shown by the following general formula (A-1), or a compound (i-2), which is a reaction product of the compound (i-1) and a dihydric or trihydric alcohol shown by the following general formula (A-2), (ii) a photo-acid generator, (iii) a basic compound, and (iv) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material. M(OR1A)4 (A-1) R2A(OH)m (A-2)
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公开(公告)号：US20140199629A1
公开(公告)日：2014-07-17
申请号：US14099678
申请日：2013-12-06
IPC分类号： G03F7/038
CPC分类号： G03F7/0397 , G03F7/0045
摘要： The present invention provides a sulfonium salt used in a resist composition that can give a pattern having a high resolution, especially an excellent rectangularity of a pattern form and a small roughness, while not readily generating a defect, in the photolithography using a high energy beam as a light source; a resist composition that contains the sulfonium salt; and a patterning process using this resist composition, wherein the sulfonium salt is shown by the following general formula (1a), wherein each of R and R0 independently represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be optionally substituted by a heteroatom or interposed by a heteroatom.
摘要翻译： 本发明提供了一种抗蚀剂组合物中使用的锍盐，其可以在使用高能量束的光刻法中产生具有高分辨率，特别是图案形式的极好的矩形性和小的粗糙度，同时不容易产生缺陷的图案 作为光源; 含有锍盐的抗蚀剂组合物; 以及使用该抗蚀剂组合物的图案化工序，其中，所述锍盐由以下通式（1a）表示，其中R和R0各自独立地表示氢原子，或者具有1〜 30个碳原子，其可以任选地被杂原子取代或被杂原子插入。
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8.发明申请ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS 有权酸发生器，化学放大电阻组合物和方法公开(公告)号：US20130224657A1
公开(公告)日：2013-08-29
申请号：US13768377
申请日：2013-02-15
CPC分类号： G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/20 , G03F7/2041
摘要： The present invention provides an acid generator generates a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat:To provide a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of LER and a depth of focus and can be effectively and widely used particularly without degradation of a resolution, a chemically amplified resist composition using the same, and a patterning process.
摘要翻译： 本发明提供一种酸反应器，其响应于高能束或热而产生由以下通式（1）表示的磺酸：提供适合用作抗蚀剂组合物的酸发生剂的新型酸产生剂，其中 解决了LER和焦点深度的问题，可以在不降低分辨率的情况下进行有效且广泛的应用，使用其的化学放大抗蚀剂组合物和图案化工艺。
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公开(公告)号：US20230296981A1
公开(公告)日：2023-09-21
申请号：US18180946
申请日：2023-03-09
CPC分类号： G03F7/0392 , G03F7/38
摘要： Provided are: a resist material and patterning process having sensitivity, resolution, and dissolution contrast exceeding those of conventional positive-type resist materials, having reduced edge roughness and size variation, and having a good pattern shape after exposure. A resist material, including: (Ia) a polymer having a repeating unit (A) having a hydroxy group or a carboxy group; (II) a crosslinker having a structure represented by the following formula (1); (III) a thermal acid generator having a structure represented by the following formula (2); (IV) an organic solvent; and (V) a component to be decomposed by irradiation of active ray or radiation to generate an acid.
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公开(公告)号：US20230244142A1
公开(公告)日：2023-08-03
申请号：US18159808
申请日：2023-01-26
IPC分类号： G03F7/039 , G03F7/038 , C08F220/18 , C08F220/30 , C08F220/22
CPC分类号： G03F7/039 , G03F7/038 , C08F220/1806 , C08F220/301 , C08F220/302 , C08F220/22 , C08F220/1808
摘要： Provided is a polymer, a resist composition, and a pattern forming method with high sensitivity, high resolution, and high contrast, and that can form a pattern with small variation in pattern width (LWR), and small in-plane uniformity of the pattern (CDU) with high energy ray. A polymer to generate an acid by light exposure and to change in solubility in a developing liquid with an action of the acid, the polymer including: a repeating unit represented by the following formula (A-1); and a repeating unit represented by any one or more of the following formulae (B-1) to (B-4),
wherein, M− represents a non-nucleophilic counterion, A+ represents an onium cation, n1 represents an integer of 1 or 2, n2 represents an integer of 0 to 2, n3 represents an integer of 0 to 5, n4 represents an integer of 0 to 2, and “c” represents an integer of 0 to 3.
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