ADHESIVE COMPOSITION, BIO-ELECTRODE, AND METHOD FOR MANUFACTURING A BIO-ELECTRODE

    公开(公告)号:US20180085019A1

    公开(公告)日:2018-03-29

    申请号:US15689024

    申请日:2017-08-29

    摘要: An adhesive composition including a resin and an electro-conductive material, wherein the electro-conductive material is one or more salts selected from sodium salt, potassium salt, and calcium salt having two fluorosulfonic acid structures per molecule and 5 or more carbon atoms shown by formula (1): −O3S—Y—La-A-Lb-Y—SO3− (Mn+)2/n (1), wherein, A represents a divalent hydrocarbon group having 1-30 carbon atoms and optionally substituted by a heteroatom or optionally interposed by a heteroatom; La and Lb each represent a linking group like an ether group, ester group; Y represents an alkylene group having 2-4 carbon atoms, containing 1-6 fluorine atoms, and optionally containing a carbonyl group; Mn+ represents any of Na+, K+, Ca2+. This can form a living body contact layer for a bio-electrode with excellent electric conductivity, biocompatibility, and light weight, which can be manufactured at low cost and without large lowering of electric conductivity even when it is wetted with water or dried.

    SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS
    3.
    发明申请
    SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    硫酸盐,耐腐蚀组合物和方法

    公开(公告)号:US20140199629A1

    公开(公告)日:2014-07-17

    申请号:US14099678

    申请日:2013-12-06

    IPC分类号: G03F7/038

    CPC分类号: G03F7/0397 G03F7/0045

    摘要: The present invention provides a sulfonium salt used in a resist composition that can give a pattern having a high resolution, especially an excellent rectangularity of a pattern form and a small roughness, while not readily generating a defect, in the photolithography using a high energy beam as a light source; a resist composition that contains the sulfonium salt; and a patterning process using this resist composition, wherein the sulfonium salt is shown by the following general formula (1a), wherein each of R and R0 independently represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may be optionally substituted by a heteroatom or interposed by a heteroatom.

    摘要翻译: 本发明提供了一种抗蚀剂组合物中使用的锍盐,其可以在使用高能量束的光刻法中产生具有高分辨率,特别是图案形式的极好的矩形性和小的粗糙度,同时不容易产生缺陷的图案 作为光源; 含有锍盐的抗蚀剂组合物; 以及使用该抗蚀剂组合物的图案化工序,其中,所述锍盐由以下通式(1a)表示,其中R和R0各自独立地表示氢原子,或者具有1〜 30个碳原子,其可以任选地被杂原子取代或被杂原子插入。

    ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS
    4.
    发明申请
    ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    酸发生器,化学放大电阻组合物和方法

    公开(公告)号:US20130224657A1

    公开(公告)日:2013-08-29

    申请号:US13768377

    申请日:2013-02-15

    IPC分类号: G03F7/004 G03F7/20

    摘要: The present invention provides an acid generator generates a sulfonic acid represented by the following general formula (1) in response to high-energy beam or heat:To provide a novel acid generator which is suitably used as an acid generator for a resist composition, which solves the problems of LER and a depth of focus and can be effectively and widely used particularly without degradation of a resolution, a chemically amplified resist composition using the same, and a patterning process.

    摘要翻译: 本发明提供一种酸反应器,其响应于高能束或热而产生由以下通式(1)表示的磺酸:提供适合用作抗蚀剂组合物的酸发生剂的新型酸产生剂,其中 解决了LER和焦点深度的问题,可以在不降低分辨率的情况下进行有效且广泛的应用,使用其的化学放大抗蚀剂组合物和图案化工艺。

    RESIST COMPOSITION AND PATTERNING PROCESS

    公开(公告)号:US20210141306A1

    公开(公告)日:2021-05-13

    申请号:US17082175

    申请日:2020-10-28

    摘要: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.