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    SILICON COMPOUND, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM CONTAINING THE SAME AND PATTERNING PROCESS
    2.
    发明申请
    SILICON COMPOUND, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM CONTAINING THE SAME AND PATTERNING PROCESS 审中-公开
    硅化合物，含硅化合物，用于形成含有它们的电阻膜和组合物的方法

    公开(公告)号：US20130280912A1

    公开(公告)日：2013-10-24

    申请号：US13854622

    申请日：2013-04-01

    Applicant: SHIN-ETSU CHEMICAL CO., LTD.

    Inventor： Tsutomu OGIHARA ,  Takafumi UEDA ,  Yoshinori TANEDA ,  Masahiro KANAYAMA

    IPC: G03F7/09 ,  H01L21/306

    CPC classification number: G03F7/094 ,  C07F7/1804 ,  C08G77/14 ,  C09D183/06 ,  G03F7/0752 ,  H01L21/0271 ,  H01L21/306

    Abstract: The invention provides a silicon compound represented by the following general formula (A-1) or (A-2), wherein, R represents a hydrocarbon group having 1 to 6 carbon atoms, R1 and R2 represent an acid labile group, R3 represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms, k represents an integer of 1 or 2, m represents an integer of 0, 1, or 2, and n represents an integer of 0 or 1. There can be provided a resist underlayer film that can be applied not only to a resist pattern formed by a hydrophilic organic compound obtained in negative development but also to a resist pattern composed of a hydrophobic compound obtained in conventional positive development.

    Abstract translation: 本发明提供由以下通式（A-1）或（A-2）表示的硅化合物，其中，R表示碳原子数为1〜6的烃基，R 1和R 2表示酸不稳定基，R 3表示 氢原子或碳原子数为1〜30的一价有机基团，k表示1或2的整数，m表示0,1或2的整数，n表示0或1的整数。 抗蚀剂下层膜不仅可以应用于由负显影获得的亲水性有机化合物形成的抗蚀剂图案，而且可以应用于由常规阳性显影中获得的疏水性化合物构成的抗蚀剂图案。

    COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS
    4.
    发明申请
    COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS 有权

    公开(公告)号：US20210026246A1

    公开(公告)日：2021-01-28

    申请号：US16928777

    申请日：2020-07-14

    Applicant: SHIN-ETSU CHEMICAL CO., LTD.

    Inventor： Tsutomu OGIHARA ,  Yusuke BIYAJIMA ,  Masahiro KANAYAMA

    IPC: G03F7/11 ,  C09D183/06 ,  C09D183/08 ,  C08G77/18 ,  C08G77/26 ,  G03F7/20 ,  H01L21/027

    Abstract: A composition for forming a silicon-containing resist underlayer film includes: a thermosetting silicon-containing material containing any one or more of a partial structure shown by the general formula (Sx-1), (Sx-2), and (Sx-3); and a compound shown by the general formula (P-0), where R1 represents an organic group that has or generates a silanol group, a hydroxy group, or a carboxy group; R2 and R3 are each independently the same as R1 or each represent a hydrogen atom or a monovalent substituent having 1 to 30 carbon atoms; R100 represents a divalent organic group substituted with a fluorine atom; R101 and R102 each independently represents a monovalent hydrocarbon group having 1 to 20 carbon atoms; R103 represents a divalent hydrocarbon group having 1 to 20 carbon atoms; and L104 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms.

    METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST
    6.
    发明申请
    METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST 审中-公开

    公开(公告)号：US20200340806A1

    公开(公告)日：2020-10-29

    申请号：US16808637

    申请日：2020-03-04

    Applicant: SHIN-ETSU CHEMICAL CO., LTD.

    Inventor： Tsutomu OGIHARA ,  Tsukasa WATANABE ,  Yoshio KAWAI ,  Tomohiro KOBAYASHI ,  Yusuke BIYAJIMA ,  Masahiro KANAYAMA

    IPC: G01B15/02 ,  C08G77/08 ,  G03F7/11 ,  G03F7/075 ,  G03F7/32 ,  G03F7/20 ,  G03F7/004

    Abstract: A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

    COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS
    7.
    发明申请
    COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS 审中-公开

    公开(公告)号：US20200233303A1

    公开(公告)日：2020-07-23

    申请号：US16733882

    申请日：2020-01-03

    Applicant: SHIN-ETSU CHEMICAL CO., LTD.

    Inventor： Tsutomu OGIHARA ,  Yusuke BIYAJIMA ,  Masahiro KANAYAMA ,  Tsukasa WATANABE ,  Masaki OHASHI

    IPC: G03F7/075 ,  G03F7/11 ,  C08G77/08 ,  G03F7/20

    Abstract: A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where R100 represents divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R103 represents linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with sulfur atom in the formula; and L104 represents a single bond or linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom.

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