摘要:
A cleaning solution for temporary adhesive for substrates contains: tetrabutylammonium fluoride; dimethyl sulfoxide; and a liquid compound having a solubility parameter of 8.0 or more and 10.0 or less and having a heteroatom. The tetrabutylammonium fluoride is preferably contained at a content of 1 mass % or more and 15 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound. The dimethyl sulfoxide is preferably contained at a content of 5 mass % or more and 30 mass % or less in 100 mass % of a total of the tetrabutylammonium fluoride, the dimethyl sulfoxide, and the liquid compound.
摘要:
A bonding arrangement comprising a silicone-base adhesive composition is suited for temporarily bonding a wafer to a support for wafer processing. The bonding arrangement includes a first temporary bond layer of non-silicone thermoplastic resin, and a second temporary bond layer of thermosetting silicone polymer and/or a third temporary bond layer of thermosetting siloxane-modified polymer. The second and/or third bond layer contains an antistatic agent.
摘要:
A bonding arrangement comprising a silicone-base adhesive composition is suited for temporarily bonding a wafer to a support for wafer processing. The bonding arrangement includes a first temporary bond layer of non-silicone thermoplastic resin, and a second temporary bond layer of thermosetting silicone polymer and/or a third temporary bond layer of thermosetting siloxane-modified polymer. The second and/or third bond layer contains an antistatic agent.
摘要:
A method for manufacturing a thin substrate uses a temporary adhesive film for substrate processing for temporarily adhesion of a substrate to a support on a surface of the substrate opposite to a surface to be processed, the temporary adhesive film for substrate processing containing a siloxane bond-containing polymer having a weight average molecular weight of 3,000 to 500,000 in an amount of 10 parts by mass or more and 100 parts by mass or less relative to 100 parts by mass; and includes: (a) laminating the temporary adhesive film for substrate processing onto the support and/or the surface of the substrate opposite to the surface to be processed; (b) bonding thereof under reduced pressure; (c) processing the substrate by grinding or polishing; (d) treating the substrate with acid or base; (e) other processing; (f) separating the processed substrate from the support; and (g) cleaning the substrate.
摘要:
A wafer processing laminate including support, temporary adhesive material layer formed on support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, wherein temporary adhesive material layer includes a three-layered complex temporary adhesive material layer that includes first temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A) having thickness of less than 100 nm and releasably laminated to front surface of wafer, second temporary adhesive layer composed of thermosetting siloxane-modified polymer layer (B) releasably laminated to first temporary adhesive layer, and third temporary adhesive layer composed of thermoplastic organopolysiloxane polymer layer (A′) having thickness of less than 100 nm, releasably laminated to second temporary adhesive layer, and releasably laminated to support. This wafer processing laminate can withstand thermal process at high temperature exceeding 300° C., and can increase productivity of thin wafers.
摘要:
Temporary adhesive material for wafer processing, the temporary adhesive material being used for temporarily bonding support to wafer having circuit-forming front surface and back surface to be processed, including complex temporary adhesive material layer that has first temporary adhesive layer composed of thermosetting siloxane polymer layer (A), second temporary adhesive layer composed of thermosetting polymer layer (B), and third temporary adhesive layer composed of thermoplastic resin layer (C), wherein the polymer layer (A) is cured layer of composition containing (A-1) an organopolysiloxane having alkenyl group within its molecule, (A-2) an organopolysiloxane having R103SiO0.5 unit and SiO2 unit, (A-3) organohydrogenpolysiloxane having two or more Si—H groups per molecule, and (A-4) platinum-based catalyst. There can be provided a wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer using the same which facilitate temporary adhesion and delamination, has excellent CVD resistance, and increasing productivity of thin wafers.
摘要:
A temporary bonding arrangement for wafer processing is provided comprising a first temporary bond layer (A) of thermoplastic resin, a second temporary bond layer (B) of thermosetting siloxane polymer, and a third temporary bond layer (C) of thermosetting polymer. Layer (B) is cured with a curing catalyst contained in layer (A) which is laid contiguous to layer (B). An adhesive layer of uniform thickness is formed without insufficient step coverage and other failures.
摘要:
The present invention is a temporary adhesion method for temporarily bonding a support and a wafer via a temporary adhesive material, including attaching the wafer to the support via the temporary adhesive material including a complex temporary adhesive material layer that consists of a thermoplastic resin layer (A) exhibiting a storage modulus E′ of 1 to 500 MPa and a tensile rupture strength of 5 to 50 MPa at 25° C. and a thermosetting polymer layer (B) exhibiting a storage modulus E′ of 1 to 1000 MPa and a tensile rupture strength of 1 to 50 MPa at 25° C. after curing, wherein the attaching is performed by forming the layer (A) on the front surface of the wafer from a liquid composition (A′), forming the layer (B) on the support by laminating a film resin (B′), and then heating the wafer and the support under reduced pressure, or forming the layer (A) on the front surface of the wafer from the liquid composition (A′), forming the layer (B) on the layer (A) by laminating the film resin (B′), and then heating the wafer and the support under reduced pressure, and heat curing the layer (B). This temporary adhesion method facilitates temporary adhesion and separation and can increase productivity of thin wafers.
摘要:
A method for manufacturing a laminate including a support and a substrate having a back surface to be processed and a non-processed surface, the support and the non-processed surface being bonded via a temporary adhesive material. The method includes the steps: (a) laminating the temporary adhesive material on either or both of the support and the non-processed surface of the substrate; (b) preheating the support and the substrate before the bonding is started; and (c) bonding the support and the substrate via the temporary adhesive material. In the step (b), the substrate is heated to a temperature of 50° C. or more and 250° C. or less, while the support is heated to a temperature of 50° C. or more and 250° C. or less but different from that of the substrate. In the step (c), the bonding is started with the temperatures of the support and the substrate after the preheating being different.
摘要:
A temporary adhesive film roll for substrate processing, includes: a roll axis and a composite film-shaped temporary-adhesive material for temporarily bonding a substrate to a support, the composite film-shaped temporary-adhesive material being rolled up around the roll axis; wherein the composite film-shaped temporary-adhesive material includes a first temporary adhesive layer composed of a thermoplastic resin, a second temporary adhesive layer composed of a thermosetting resin, and a third temporary adhesive layer composed of a thermosetting resin which is different from that of the second temporary adhesive layer. The temporary adhesive film roll for substrate processing is capable of giving a temporary adhesive material which facilitates temporary adhesion between a substrate and a support, rapidly forms a temporary adhesive material layer on a substrate or a support, has excellent resistance to a thermal process such as chemical vapor deposition, and is easily separated to improve the productivity of thin wafers.