公开(公告)号：US20240405104A1

公开(公告)日：2024-12-05

申请号：US18648580

申请日：2024-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gwon KIM ,  Myung Gil KANG ,  Jin Kyu KIM ,  Dong Won KIM ,  Beom Jin PARK

IPC: H01L29/735 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417

Abstract: A semiconductor device is provided. The semiconductor includes at least one of a well area in a substrate and having a first conductivity-type; impurity-implanted areas in the well, and having a second conductivity-type different from the first conductivity-type and arranged in a first direction, a first fin structure on the impurity-implanted area and having the second conductivity-type, wherein the first fin structure includes first semiconductor patterns and first sacrificial patterns alternately stacked; a first contact on the first fin structure; a first epitaxial pattern on the well area and having the first conductivity-type; and a second contact on the first epitaxial pattern.

公开(公告)号：US20240222374A1

公开(公告)日：2024-07-04

申请号：US18457313

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gwon KIM ,  Myung Gil KANG ,  Soo Jin JEONG ,  Dong Won KIM ,  Beom Jin PARK ,  Hong Seon YANG

IPC: H01L27/092 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L27/092 ,  H01L21/28518 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a substrate that includes a first region and a second region, a first active pattern on the first region, a first gate structure that intersects the first active pattern, a first epitaxial pattern connected to the first active pattern and includes n-type impurities, a first source/drain contact that penetrates an upper surface of the first epitaxial pattern and is connected to the first epitaxial pattern, a second active pattern on the second region, a second gate structure that intersects the second active pattern, a second epitaxial pattern connected to the second active pattern and includes p-type impurities, and a second source/drain contact that penetrates an upper surface of the second epitaxial pattern and is connected to the second epitaxial pattern. A lower surface of the first source/drain contact is lower than a lower surface of the second source/drain contact.