知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.016 seconds)

    SEMICONDUCTOR DEVICE
    1.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240194752A1

    公开(公告)日：2024-06-13

    申请号：US18502352

    申请日：2023-11-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo Kyung YOU ,  Sang Koo KANG ,  Jun Chae LEE ,  Koung Min RYU ,  Woo Jin LEE

    IPC: H01L29/417 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78

    CPC classification number: H01L29/41791 ,  H01L29/0673 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/7851

    Abstract: A semiconductor device includes a substrate, an active pattern disposed on the substrate and extending in a first direction, gate electrodes covering the active pattern and extending in a second direction, a gate spacer disposed on a sidewall of each of the gate electrodes, a source/drain pattern disposed between adjacent ones of the gate electrodes, an etch stop film disposed along a sidewall of the gate spacer and a profile of the source/drain pattern, an interlayer insulating film disposed between the adjacent ones of the gate electrodes with a contact trench exposing the source/drain pattern defined therein, a liner film disposed on an outer sidewall of the contact trench, and a source/drain contact disposed on the liner film and filling the contact trench, in which the source/drain contact is connected to the source/drain pattern. At least a portion of the liner film may be disposed in the source/drain pattern.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190304895A1

    公开(公告)日：2019-10-03

    申请号：US16181739

    申请日：2018-11-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hong PARK ,  Woo Jin LEE

    IPC: H01L23/522 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532

    Abstract: A semiconductor device includes an interlayer insulating layer disposed on a substrate, a first metal wiring and a second metal wiring disposed in the interlayer insulating layer, the first and second wirings spaced apart from each other in a first direction, the first and second wirings extending to a second direction perpendicular to the first direction, an air gap formed in the interlayer insulating layer between the first metal wiring and the second metal wiring, and spaced apart from a sidewall of the first metal wiring and a sidewall of the second metal wiring, and a capping layer disposed on the interlayer insulating layer, the capping layer covering the first metal wiring, the second metal wiring, and the air gap, wherein the air gap is disposed at a first distance from the first metal wiring in the first direction and at a second distance from the second metal wiring in the first direction, and wherein the first and second distances are the same.

Patent Agency Ranking