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公开(公告)号:US11217495B2
公开(公告)日:2022-01-04
申请号:US17008627
申请日:2020-08-31
发明人: Sang-Young Kim , Kyung-Soo Rho , Ho-Jeong Moon , Hyuck Shin , Sun-Nyeong Jung
摘要: An X-ray source is disposed and a detector is disposed adjacent to the X-ray source. A test specimen holder is disposed between the X-ray source and the detector. A filter is disposed between the X-ray source and the test specimen holder. The filter has a plate-shaped semiconductor, a granular semiconductor, or a combination thereof.
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公开(公告)号:US09500599B2
公开(公告)日:2016-11-22
申请号:US14603809
申请日:2015-01-23
发明人: Youn-Jo Mun , Hoon Sohn , Sang-Young Kim , Yun-Kyu An , Sung-Il Cho , Seung-Weon Ha , Jin-Yeol Yang , Soon-Kyu Hwang
CPC分类号: G01N21/9501 , G01J5/0007 , G01J5/025 , G01J5/026 , G01J5/047 , G01J5/0803 , G01J5/0806 , G01J5/0831 , G01J5/0896 , G01J5/10 , G01J2005/0048 , G01J2005/0051 , G01J2005/0077 , G01J2005/0081 , G01N2201/06113 , H04N5/33
摘要: A surface inspection apparatus and method of inspecting chip surfaces includes a laser generator that generates a periodic CW laser and is transformed into an inspection laser beam having a beam size smaller than a surface size of the chip. Thus, the inspection laser beam is irradiated onto a plurality of the semiconductor chips such that the semiconductor chips are partially and simultaneously heated. Thermal waves are detected in response to the inspection laser beam and thermal images are generated corresponding to the thermal waves. A surface image is generated by a lock-in thermography technique and hold exponent analysis of the thermal image, thereby generating surface image in which a surface defect is included. Time and accuracy of the surface inspection process is improved.
摘要翻译: 表面检查装置和检查芯片表面的方法包括产生周期性CW激光并被转换成具有小于芯片的表面尺寸的光束尺寸的检查激光束的激光发生器。 因此,将检查激光束照射到多个半导体芯片上,使得半导体芯片被部分同时加热。 响应于检查激光束检测热波,并且对应于热波产生热图像。 通过锁定热成像技术产生表面图像,并保持热图像的指数分析,从而产生其中包括表面缺陷的表面图像。 表面检查过程的时间和精度得到提高。
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公开(公告)号:US10593671B2
公开(公告)日:2020-03-17
申请号:US16013734
申请日:2018-06-20
发明人: Deok-Han Bae , Sang-Young Kim , Byung-Chan Ryu , Jong-Ho You , Da-Un Jeon
IPC分类号: H01L27/088 , H01L27/02 , H01L29/08 , H01L29/417 , H01L29/06 , H01L29/66 , H01L21/8234 , H01L21/768 , H01L21/762 , H01L29/78 , H01L21/311 , H01L29/165 , H01L21/306
摘要: An integrated circuit device includes a substrate having a fin-type active region that extends in a first direction, a gate structure that intersects the fin-type active region on the substrate and extends in a second direction perpendicular to the first direction and parallel to an upper surface of the substrate, a guide pattern that extends on the gate structure in the second direction and has an inclined side surface that extends in the second direction, source/drain regions disposed on both sides of the gate structure, and a first contact that is electrically connected to one of the source/drain regions and in which an upper portion contacts the inclined side surface of the guide pattern. The width of an upper portion of the guide pattern in the first direction is less than the width of a lower portion of the guide pattern in the first direction.
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公开(公告)号:US09449918B2
公开(公告)日:2016-09-20
申请号:US14798474
申请日:2015-07-14
发明人: Moon-Gi Cho , Eun-Chul Ahn , Sang-Young Kim , Joo-Weon Shin , Min-Ho Lee
IPC分类号: H01L29/00 , H01L23/525 , H01L27/112 , H01L23/532 , G06F12/02
CPC分类号: H01L23/5256 , G06F12/0246 , H01L23/5329 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要: A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.
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公开(公告)号:US09123725B2
公开(公告)日:2015-09-01
申请号:US14088654
申请日:2013-11-25
发明人: Moon-Gi Cho , Eun-Chul Ahn , Sang-Young Kim , Joo-Weon Shin , Min-Ho Lee
IPC分类号: H01L29/80 , H01L23/525 , G06F12/02
CPC分类号: H01L23/5256 , G06F12/0246 , H01L23/5329 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要: A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.
摘要翻译: 半导体器件通过防止通过修复过程的熔断体被电化学迁移电连接而提高了可靠性。 半导体器件包括衬底,熔丝,其包括形成在衬底上相同电平处的第一熔丝图案和第二熔丝图案,第一熔丝图案和第二熔丝图案彼此间隔开第一宽度,使得间隙 在所述保险丝设置在所述第一熔丝图案和所述第二熔丝图案之间的第一位置处,以及形成在所述第一熔丝图案和所述第二熔丝图案上的第一绝缘层,所述第一绝缘层包括位于所述第一位置上方的开口,并且具有 第二宽度小于第一宽度。
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