公开(公告)号：US10593671B2

公开(公告)日：2020-03-17

申请号：US16013734

申请日：2018-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deok-Han Bae ,  Sang-Young Kim ,  Byung-Chan Ryu ,  Jong-Ho You ,  Da-Un Jeon

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/762 ,  H01L29/78 ,  H01L21/311 ,  H01L29/165 ,  H01L21/306

Abstract: An integrated circuit device includes a substrate having a fin-type active region that extends in a first direction, a gate structure that intersects the fin-type active region on the substrate and extends in a second direction perpendicular to the first direction and parallel to an upper surface of the substrate, a guide pattern that extends on the gate structure in the second direction and has an inclined side surface that extends in the second direction, source/drain regions disposed on both sides of the gate structure, and a first contact that is electrically connected to one of the source/drain regions and in which an upper portion contacts the inclined side surface of the guide pattern. The width of an upper portion of the guide pattern in the first direction is less than the width of a lower portion of the guide pattern in the first direction.