公开(公告)号：US20190198315A1

公开(公告)日：2019-06-27

申请号：US16265709

申请日：2019-02-01

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoyoung KIM ,  Hyo-Sun LEE ,  Soojin KIM ,  Keonyoung KIM ,  JINHYE BAE ,  HOON HAN ,  Tae Soo KWON ,  Jung Hun LIM

IPC: H01L21/02 ,  C11D7/08 ,  C11D7/26 ,  C11D7/32 ,  H01L21/683 ,  H01L23/00 ,  C11D11/00

CPC classification number: H01L21/02068 ,  C11D7/08 ,  C11D7/261 ,  C11D7/264 ,  C11D7/266 ,  C11D7/3209 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/6835 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1181 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3512 ,  H01L2924/37001 ,  H01L2224/11 ,  H01L2224/03

Abstract: Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

公开(公告)号：US20220415643A1

公开(公告)日：2022-12-29

申请号：US17660449

申请日：2022-04-25

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Hae-Won CHOI ,  Anton KORIAKIN ,  Sangjine Park PARK ,  Keonyoung KIM ,  Sukhoon KIM ,  Seohyun KIM ,  Young-Hoo KIM ,  Kuntack LEE ,  Jihoon JEONG

IPC: H01L21/02 ,  H01L21/67 ,  C11D11/00 ,  C11D3/43 ,  C11D1/72

Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

公开(公告)号：US20210254224A1

公开(公告)日：2021-08-19

申请号：US17313534

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US20200087798A1

公开(公告)日：2020-03-19

申请号：US16574372

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SOULBRAIN CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  H01L21/306 ,  H01L21/311 ,  C23F1/30

Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.