公开(公告)号：US12107049B2

公开(公告)日：2024-10-01

申请号：US17481609

申请日：2021-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younseok Choi ,  Byungsun Park ,  Youngil Lee ,  Jaechul Lee ,  Jiwoon Im

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27 ,  H10B43/40

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76895 ,  H01L23/5283 ,  H01L23/5329 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor device includes a lower memory stack disposed on a substrate and including lower gate electrodes and a lower staircase structure, an upper memory stack including upper gate electrodes and an upper staircase structure, a lower interlayer insulating layer doped with an impurity and covering the lower staircase structure, the lower interlayer insulating layer having a doping concentration gradually increasing toward the lower staircase structure, an upper interlayer insulating layer doped with an impurity and covering the upper staircase structure and the lower interlayer insulating layer, the upper interlayer insulating layer having a doping concentration gradually increasing toward the upper staircase structure and the lower interlayer insulating layer, lower contact plugs and upper contact plugs contacting the lower gate electrodes and the upper gate electrodes, respectively.

公开(公告)号：US11233494B2

公开(公告)日：2022-01-25

申请号：US16593376

申请日：2019-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjoon Kim ,  Je-Dong Lee ,  Younghoon Kwon ,  Myoungwoon Kim ,  Il-Woo Kim ,  Jiwoon Im ,  Jaewon Jung ,  Hee Jong Jeong

IPC: H03H7/01 ,  H01J37/32

Abstract: An electronic circuit includes a first filter and a second filter. The first filter passes a first frequency component of a first harmonic frequency generated by a first voltage source to form a potential difference in a chamber and a second frequency component of a second harmonic frequency higher than the first harmonic frequency. The second filter removes the first frequency component and the second frequency component received from the first filter. The second harmonic frequency is included in a first frequency band determined based on a capacitance of the second filter.

公开(公告)号：US11264219B2

公开(公告)日：2022-03-01

申请号：US16814040

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangtae Hwang ,  Jinyong Kim ,  Iksoo Kim ,  Geumbi Mun ,  Junwon Lee ,  Jiwoon Im

IPC: H01J37/32

Abstract: Provided are a radical monitoring apparatus capable of monitoring electrical diagnosis of a radical produced by direct plasma or remote plasma and the amount of change of the produced radical, and a plasma apparatus including the radical monitoring apparatus. The plasma apparatus includes a process chamber in which a plasma process is performed, a dielectric film in the process chamber and surrounding sides of a plasma discharge space in the process chamber, and a sensor inside the dielectric film and configured to monitor plasma to thereby monitor a radical generated in the plasma.

公开(公告)号：US20210193508A1

公开(公告)日：2021-06-24

申请号：US17003304

申请日：2020-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geumbi Mun ,  Jinyong Kim ,  Junwon Lee ,  Kwangtae Hwang ,  Iksoo Kim ,  Jiwoon Im

IPC: H01L21/762 ,  H01L27/108 ,  H01L21/02

Abstract: To manufacture an integrated circuit (IC) device, a lower structure having a step structure defining a trench is prepared. A material film is formed inside the trench. To form a material film, a first precursor including a first central element and a first ligand having a first size is supplied onto a lower structure to form a first chemisorbed layer of the first precursor on the lower structure. A second precursor including a second central element and a second ligand having a second size less than the first size is supplied onto a resultant structure including the first chemisorbed layer to form a second chemisorbed layer of the second precursor on the lower structure. A reactive gas is supplied to the first chemisorbed layer and the second chemisorbed layer.

公开(公告)号：US11456314B2

公开(公告)日：2022-09-27

申请号：US16882829

申请日：2020-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoo Lee ,  Jongmyeong Lee ,  Iksoo Kim ,  Jiwoon Im

IPC: H01L27/1157 ,  H01L29/792 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11573 ,  G11C7/18

Abstract: A semiconductor device may comprise a stack structure on a substrate, the stack structure including a plurality of dielectric layers and a plurality of transparent conductive oxide layers, the dielectric layers and the transparent conductive oxide layers are alternately stacked, each of the dielectric layers and a corresponding one of the transparent conductive oxide layer adjacent to each other in a vertical direction have equal horizontal widths, and a channel structure extending through the stack structure, the channel structure including an information storage layer, a channel layer inside the information storage layer, and a buried dielectric layer inside the channel layer.

公开(公告)号：US11450554B2

公开(公告)日：2022-09-20

申请号：US17003304

申请日：2020-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geumbi Mun ,  Jinyong Kim ,  Junwon Lee ,  Kwangtae Hwang ,  Iksoo Kim ,  Jiwoon Im

IPC: H01L21/62 ,  H01L21/02 ,  H01L21/762 ,  H01L27/108

Abstract: To manufacture an integrated circuit (IC) device, a lower structure having a step structure defining a trench is prepared. A material film is formed inside the trench. To form a material film, a first precursor including a first central element and a first ligand having a first size is supplied onto a lower structure to form a first chemisorbed layer of the first precursor on the lower structure. A second precursor including a second central element and a second ligand having a second size less than the first size is supplied onto a resultant structure including the first chemisorbed layer to form a second chemisorbed layer of the second precursor on the lower structure. A reactive gas is supplied to the first chemisorbed layer and the second chemisorbed layer.

公开(公告)号：US11225715B2

公开(公告)日：2022-01-18

申请号：US16750557

申请日：2020-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byung-Sun Park ,  Ik Soo Kim ,  Jiwoon Im ,  Sangho Rha ,  Minjae Oh

IPC: C23C16/455 ,  H01L21/67 ,  H01J37/32

Abstract: A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.

公开(公告)号：US20200335313A1

公开(公告)日：2020-10-22

申请号：US16814040

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangtae Hwang ,  Jinyong Kim ,  lksoo Kim ,  Geumbi Mun ,  Junwon Lee ,  Jiwoon Im

IPC: H01J37/32

Abstract: Provided are a radical monitoring apparatus capable of monitoring electrical diagnosis of a radical produced by direct plasma or remote plasma and the amount of change of the produced radical, and a plasma apparatus including the radical monitoring apparatus. The plasma apparatus includes a process chamber in which a plasma process is performed, a dielectric film in the process chamber and surrounding sides of a plasma discharge space in the process chamber, and a sensor inside the dielectric film and configured to monitor plasma to thereby monitor a radical generated in the plasma.