公开(公告)号：US20230049165A1

公开(公告)日：2023-02-16

申请号：US17735150

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEHWAN CHA ,  Minjae Oh ,  Kyungtae Jang

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

Abstract: Semiconductor devices may include a first stack structure including interlayer insulating layers and gate electrodes alternately stacked in a first direction perpendicular to an upper surface of a substrate on a first region of the substrate and including a first lower stack structure and a first upper stack structure, a second stack structure including the interlayer insulating layers and sacrificial insulating layers alternately stacked in the first direction on a second region of the substrate and including a second lower stack structure and a second upper stack structure, a channel structure penetrating the first upper stack structure and the first lower stack structure, extending in the first direction, and including a channel layer, and an align key structure penetrating the second lower stack structure and extending in the first direction. The second upper stack structure may include a first align key region on the align key structure.

公开(公告)号：US11225715B2

公开(公告)日：2022-01-18

申请号：US16750557

申请日：2020-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byung-Sun Park ,  Ik Soo Kim ,  Jiwoon Im ,  Sangho Rha ,  Minjae Oh

IPC: C23C16/455 ,  H01L21/67 ,  H01J37/32

Abstract: A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.