公开(公告)号：US11264219B2

公开(公告)日：2022-03-01

申请号：US16814040

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangtae Hwang ,  Jinyong Kim ,  Iksoo Kim ,  Geumbi Mun ,  Junwon Lee ,  Jiwoon Im

IPC: H01J37/32

Abstract: Provided are a radical monitoring apparatus capable of monitoring electrical diagnosis of a radical produced by direct plasma or remote plasma and the amount of change of the produced radical, and a plasma apparatus including the radical monitoring apparatus. The plasma apparatus includes a process chamber in which a plasma process is performed, a dielectric film in the process chamber and surrounding sides of a plasma discharge space in the process chamber, and a sensor inside the dielectric film and configured to monitor plasma to thereby monitor a radical generated in the plasma.

公开(公告)号：US20210193508A1

公开(公告)日：2021-06-24

申请号：US17003304

申请日：2020-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geumbi Mun ,  Jinyong Kim ,  Junwon Lee ,  Kwangtae Hwang ,  Iksoo Kim ,  Jiwoon Im

IPC: H01L21/762 ,  H01L27/108 ,  H01L21/02

Abstract: To manufacture an integrated circuit (IC) device, a lower structure having a step structure defining a trench is prepared. A material film is formed inside the trench. To form a material film, a first precursor including a first central element and a first ligand having a first size is supplied onto a lower structure to form a first chemisorbed layer of the first precursor on the lower structure. A second precursor including a second central element and a second ligand having a second size less than the first size is supplied onto a resultant structure including the first chemisorbed layer to form a second chemisorbed layer of the second precursor on the lower structure. A reactive gas is supplied to the first chemisorbed layer and the second chemisorbed layer.

公开(公告)号：US11450554B2

公开(公告)日：2022-09-20

申请号：US17003304

申请日：2020-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geumbi Mun ,  Jinyong Kim ,  Junwon Lee ,  Kwangtae Hwang ,  Iksoo Kim ,  Jiwoon Im

IPC: H01L21/62 ,  H01L21/02 ,  H01L21/762 ,  H01L27/108

Abstract: To manufacture an integrated circuit (IC) device, a lower structure having a step structure defining a trench is prepared. A material film is formed inside the trench. To form a material film, a first precursor including a first central element and a first ligand having a first size is supplied onto a lower structure to form a first chemisorbed layer of the first precursor on the lower structure. A second precursor including a second central element and a second ligand having a second size less than the first size is supplied onto a resultant structure including the first chemisorbed layer to form a second chemisorbed layer of the second precursor on the lower structure. A reactive gas is supplied to the first chemisorbed layer and the second chemisorbed layer.

公开(公告)号：US20200335313A1

公开(公告)日：2020-10-22

申请号：US16814040

申请日：2020-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangtae Hwang ,  Jinyong Kim ,  lksoo Kim ,  Geumbi Mun ,  Junwon Lee ,  Jiwoon Im

IPC: H01J37/32

Abstract: Provided are a radical monitoring apparatus capable of monitoring electrical diagnosis of a radical produced by direct plasma or remote plasma and the amount of change of the produced radical, and a plasma apparatus including the radical monitoring apparatus. The plasma apparatus includes a process chamber in which a plasma process is performed, a dielectric film in the process chamber and surrounding sides of a plasma discharge space in the process chamber, and a sensor inside the dielectric film and configured to monitor plasma to thereby monitor a radical generated in the plasma.