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    Air conditioner
    1.
    发明授权
    Air conditioner 有权

    公开(公告)号：US12018847B2

    公开(公告)日：2024-06-25

    申请号：US17415500

    申请日：2019-09-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seon Uk Na ,  Jin-Gyun Kim ,  Jong Kweon Ha

    IPC: F24F1/0014 ,  F24F1/0033 ,  F24F1/005 ,  F24F13/20

    CPC classification number: F24F1/0014 ,  F24F1/0033 ,  F24F1/005 ,  F24F13/20

    Abstract: Disclosed is an air conditioner. The disclosed air conditioner comprises: a main discharge port formed in a housing so as to discharge air introduced through a first inlet; a first guide discharge port configured to discharge a portion of air introduced through a second inlet such that the portion of the air introduced through the second inlet is mixed with the air discharged from the main discharge port; a second guide discharge port configured to discharge another portion of the air introduced through the second inlet such that the another portion of the air introduced through the second inlet is mixed with the air discharged from the main discharge port; and a distribution device configured to adjust the flow rate of the air discharged through the first guide discharge port and the second guide discharge port.

    Semiconductor device and method of fabricating the same
    6.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09257573B2

    公开(公告)日：2016-02-09

    申请号：US13949447

    申请日：2013-07-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji-Hoon Choi ,  Dong-Kyum Kim ,  Jin-Gyun Kim ,  Su-Jin Shin ,  Sang-Hoon Lee ,  Ki-Hyun Hwang

    IPC: H01L29/792 ,  H01L21/28 ,  H01L27/115

    CPC classification number: H01L27/11582 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/28008 ,  H01L21/28282 ,  H01L27/1157 ,  H01L29/7926

    Abstract: A semiconductor device is provided. The semiconductor includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked in a first direction on a substrate. The plurality of interlayer insulating layers and the plurality of gate electrodes constitute a side surface extended in the first direction. A gate dielectric layer is disposed on the side surface. A channel pattern is disposed on the gate dielectric layer. The gate dielectric layer includes a protective pattern, a charge trap layer, and a tunneling layer. The protective pattern includes a portion disposed on a corresponding gate electrode of the plurality of gate electrodes. The charge trap layer is disposed on the protective pattern. The tunneling layer is disposed between the charge trap layer and the channel pattern. The protective pattern is denser than the charge trap layer.

    Abstract translation: 提供半导体器件。 半导体包括在基板上沿第一方向交替堆叠的多个层间绝缘层和多个栅电极。 多个层间绝缘层和多个栅电极构成在第一方向上延伸的侧面。 栅电介质层设置在侧表面上。 沟道图案设置在栅介质层上。 栅介质层包括保护图案，电荷陷阱层和隧穿层。 保护图案包括设置在多个栅电极的对应的栅电极上的部分。 电荷陷阱层设置在保护图案上。 隧道层设置在电荷陷阱层和沟道图案之间。 保护图案比电荷陷阱层更致密。

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