Methods of forming wiring structures for semiconductor devices

    公开(公告)号:US10410919B2

    公开(公告)日:2019-09-10

    申请号:US15296202

    申请日:2016-10-18

    摘要: A method of fabricating a wiring structure for a semiconductor device may include forming a lower wiring in a lower insulating layer, forming an etch stop layer covering the lower insulating layer and the lower wiring, forming an interlayer insulating layer on the etch stop layer, forming a preliminary via-hole through the interlayer insulating layer, partially etching the interlayer insulating layer to form a trench partially merged with the preliminary via-hole and a via-hole defined by a remaining portion of the preliminary via-hole, removing the etch stop layer exposed by the via-hole to expose the lower wiring, partially etching a contact area at which the trench and the via-hole are in contact with each other and forming an upper wiring in the via-hole and the trench to be electrically connected to the lower wiring.

    Air conditioner indoor unit
    10.
    发明授权

    公开(公告)号:US10976061B2

    公开(公告)日:2021-04-13

    申请号:US15777734

    申请日:2016-11-17

    摘要: Disclosed is an air conditioner (AC) indoor unit including a housing installed on the ceiling and having an inlet and an outlet provided around the inlet and having a pair of straight sections facing each other and a pair of curved sections facing each other; a heat exchanger provided inside the housing and arranged in a main flow path between the inlet and the outlet; a blower fan configured to suck in air through the inlet, allow the air to exchange heat with the heat exchanger, and discharge the air through the outlet; and an auxiliary flow path guiding an auxiliary air current to change a direction of an air current discharged from the outlet. The direction of the discharged air current may be controlled by sucking in air around the outlet or blowing air to the periphery of the outlet through the auxiliary flow path without a blade.