公开(公告)号：US09613800B2

公开(公告)日：2017-04-04

申请号：US14625388

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Yong Go ,  Jin-Gyun Kim ,  Dong-Kyum Kim ,  Jung-Ho Kim ,  Koong-Hyun Nam ,  Sung-Hae Lee ,  Eun-Young Lee ,  Jung-Geun Jee ,  Eun-Yeoung Choi ,  Ki-Hyun Hwang

IPC: H01L21/02 ,  H01L21/687 ,  C23C16/01 ,  C23C16/40 ,  C23C16/455 ,  H01L27/11582

CPC classification number: H01L21/0228 ,  C23C16/01 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/68771 ,  H01L27/11582

Abstract: In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.