公开(公告)号：US20240154017A1

公开(公告)日：2024-05-09

申请号：US18378992

申请日：2023-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHWAN KIM ,  WANDON KIM ,  JUNKI PARK ,  HYUNBAE LEE ,  HYOSEOK CHOI

IPC: H01L29/45 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78

CPC classification number: H01L29/45 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/41791 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate including a first region and a second region. a first gate structure on the first region of the substrate, a first source/drain layer on a portion of the substrate adjacent to the first gate structure. a second gate structure on the second region of the substrate. a second source/drain layer on a portion of the substrate adjacent to the second gate structure. and a first contact plug including a first metal silicide pattern on the first source/drain layer. The first metal silicide pattern includes a silicide of a first metal and a silicide of a second metal different from the first metal. The device further includes a first conductive pattern on the first metal silicide pattern, a second contact plug including a second metal silicide pattern on the second source/drain layer, and a second conductive pattern on the second metal silicide pattern. The second metal silicide pattern includes a silicide of the first and second metals. A first ratio of the first metal to the second metal included in the first metal silicide pattern is different from a second ratio of the first metal to the second metal included in the second metal silicide pattern.