公开(公告)号：US08917535B2

公开(公告)日：2014-12-23

申请号：US13648296

申请日：2012-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheon An Lee ,  Donghun Kwak

IPC: G11C11/00

CPC classification number: G11C13/0069 ,  G11C13/0064 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/71 ,  G11C2213/77

Abstract: A variable resistance memory device comprises a variable resistance memory cells and a read/write circuit configured to provide a program voltage to the variable resistance memory cell, and further configured to adjust a compliance current flowing through the variable resistance memory cell in successive loops of a program operation.

Abstract translation: 可变电阻存储器件包括可变电阻存储器单元和被配置为向可变电阻存储单元提供编程电压的读/写电路，并且还被配置为调节流过可变电阻存储单元的顺应电流， 程序操作。

公开(公告)号：US09190143B2

公开(公告)日：2015-11-17

申请号：US13693093

申请日：2012-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheon An Lee ,  Donghun Kwak ,  Ingyu Baek

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C2213/71 ,  G11C2213/77

Abstract: A method of operating a variable resistance memory device comprises determining a level of an access voltage based on a number of rows or columns of a cell array, and supplying the access voltage having the determined level to the cell array.

Abstract translation: 操作可变电阻存储器件的方法包括：基于单元阵列的行数或列数来确定存取电压的电平，以及将具有所确定电平的存取电压提供给单元阵列。

公开(公告)号：US09805807B2

公开(公告)日：2017-10-31

申请号：US15003113

申请日：2016-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheon An Lee ,  Mu-Hui Park ,  Jiho Cho ,  Ji-Young Lee ,  Yoon-Hee Choi

IPC: G11C16/04 ,  G11C16/16 ,  G11C16/26 ,  G11C16/10 ,  G11C16/34 ,  G11C16/08

CPC classification number: G11C16/16 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3427

Abstract: A method of operating a nonvolatile memory device is provided as follows. The nonvolatile memory device includes memory blocks each of which has word lines. A setup voltage is applied to the word lines. A word line voltage is applied to a first word line selected from the word lines. Recovery voltages are applied to the word lines. Each recovery voltage is applied to at least one corresponding word line of the word lines. The recovery voltages have different voltage levels from each other.