公开(公告)号：US09275935B2

公开(公告)日：2016-03-01

申请号：US13961497

申请日：2013-08-07

申请人： Renesas Electronics Corporation

发明人： Ryohei Kitao ,  Yasuaki Tsuchiya

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/00 ,  H01L21/683

CPC分类号： H01L21/76898 ,  H01L21/02271 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/522 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68372 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/14505 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953

摘要： Technology that achieves high integration of a semiconductor device employing TSV technology is provided. A through electrode is configured by a small-diameter through electrode having a first diameter and being formed on a main surface side of a semiconductor wafer, and a large-diameter through electrode having a second diameter larger than the above-described first diameter and being formed on a back surface side of the semiconductor wafer, and the small-diameter through electrode is arranged inside the large-diameter through electrode in a planar view so that a center position of the small-diameter through electrode and a center position of the large-diameter through electrode do not overlap with each other in the planar view.

摘要翻译： 提供实现采用TSV技术的半导体器件高集成度的技术。 通孔由具有第一直径的小直径电极构成，并形成在半导体晶片的主表面侧，大直径通孔电极具有比上述第一直径大的第二直径， 形成在半导体晶片的背面侧，并且小直径通孔电极以平面视图布置在大直径通孔内，使得小直径通孔的中心位置和大直径通孔的中心位置 通过电极的直径在平面视图中彼此不重叠。

公开(公告)号：US09779992B2

公开(公告)日：2017-10-03

申请号：US15013068

申请日：2016-02-02

申请人： Renesas Electronics Corporation

发明人： Ryohei Kitao ,  Yasuaki Tsuchiya

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L23/522 ,  H01L23/00 ,  H01L21/683

CPC分类号： H01L21/76898 ,  H01L21/02271 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/522 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68372 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/05657 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/14505 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953

摘要： A method of manufacturing a semiconductor device includes forming a first via having a first diameter in a first main surface of a semiconductor substrate having a first thickness, after forming a first insulating film on a bottom surface and a side surface of the first via, forming a first through electrode inside the first via a first barrier metal film, after forming the first through electrode, processing the semiconductor substrate from a second main surface on an opposite side of the first main surface to reduce the first thickness of the semiconductor substrate to a second thickness thinner than the first thickness, after processing the semiconductor substrate, forming a third insulating film on the second main surface of the semiconductor substrate, and after forming the third insulating film, sequentially processing the third insulating film and the semiconductor substrate.

公开(公告)号：US09685517B2

公开(公告)日：2017-06-20

申请号：US14732295

申请日：2015-06-05

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Ryohei Kitao

IPC分类号： H01L29/417 ,  H01L29/423 ,  H01L29/16 ,  H01L29/45 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088

CPC分类号： H01L29/41741 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/16 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/0615 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： A silicon substrate is restrained from being warped. A substrate is formed by use of a silicon substrate. The substrate has a first surface and a second surface opposite to each other. A metal film is formed over the first surface. An interconnection layer is formed over the second surface. The metal film has a face centered cubic lattice structure. When the metal film is measured by XRD (X-ray diffraction), the [111] orientation intensity A(111), the [220] orientation intensity A(220) and the [311] orientation intensity A(311) of the metal film satisfy the following: A(111)/{A(220)+A(311)}≧10.