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公开(公告)号：US09520504B2
公开(公告)日：2016-12-13
申请号：US14190183
申请日：2014-02-26
IPC分类号： H01L29/792 , H01L29/66 , H01L27/115 , H01L29/423
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11568 , H01L29/4234 , H01L29/66833
摘要： In an MONOS-type memory cell with a split gate structure, short circuit between a selection gate electrode and a memory gate electrode is prevented, and reliability of a semiconductor device is improved. In a MONOS memory having a selection gate electrode and a memory gate electrode that are adjacent to each other and that extend in a first direction, an upper surface of the selection gate electrode in a region except for a shunt portion at an end portion of the selection gate electrode in the first direction is covered with a cap insulating film. The memory gate electrode is terminated on the cap insulating film side with respect to a border between the cap insulating film and an upper surface of the shunt portion exposed from the cap insulating film.
摘要翻译： 在具有分离栅极结构的MONOS型存储单元中，防止了选择栅电极和存储栅电极之间的短路，提高了半导体器件的可靠性。 在具有彼此相邻并且沿第一方向延伸的选择栅电极和存储栅电极的MONOS存储器中，在除了在第一方向的端部处的分流部分之外的区域中的选择栅电极的上表面 第一方向的选择栅极电极被帽绝缘膜覆盖。 存储栅电极相对于帽绝缘膜与从帽绝缘膜露出的分流部的上表面之间的边界在帽绝缘膜侧终止。
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公开(公告)号：US20150287736A1
公开(公告)日：2015-10-08
申请号：US14745340
申请日：2015-06-19
发明人： Koichi Toba , Yasushi Ishii , Hiraku Chakihara , Kota Funayama , Yoshiyuki Kawashima , Takashi Hashimoto
IPC分类号： H01L27/115 , H01L29/423 , H01L29/792
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/11573 , H01L29/42344 , H01L29/792
摘要： A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film,. and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.
摘要翻译： 提供了具有非易失性存储器的半导体器件，其具有改进的特性。 半导体器件包括控制栅极电极，与控制栅电极相邻设置的存储栅电极，第一绝缘膜和包括电荷存储部分的第二绝缘膜。 在这些部件中，存储栅电极由包括位于第二绝缘膜上的第一硅区的硅膜形成。 以及位于第一硅区上方的第二硅区。 第二硅区域含有p型杂质，第一硅区域的p型杂质浓度低于第二硅区域的p型杂质浓度。
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公开(公告)号：US20140239378A1
公开(公告)日：2014-08-28
申请号：US14190183
申请日：2014-02-26
IPC分类号： H01L29/792 , H01L29/66
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11568 , H01L29/4234 , H01L29/66833
摘要： In an MONOS-type memory cell with a split gate structure, short circuit between a selection gate electrode and a memory gate electrode is prevented, and reliability of a semiconductor device is improved. In a MONOS memory having a selection gate electrode and a memory gate electrode that are adjacent to each other and that extend in a first direction, an upper surface of the selection gate electrode in a region except for a shunt portion at an end portion of the selection gate electrode in the first direction is covered with a cap insulating film. The memory gate electrode is terminated on the cap insulating film side with respect to a border between the cap insulating film and an upper surface of the shunt portion exposed from the cap insulating film.
摘要翻译： 在具有分离栅极结构的MONOS型存储单元中，防止了选择栅电极和存储栅电极之间的短路，提高了半导体器件的可靠性。 在具有彼此相邻并且沿第一方向延伸的选择栅电极和存储栅电极的MONOS存储器中，在除了在第一方向的端部处的分流部分之外的区域中的选择栅电极的上表面 第一方向的选择栅极电极被帽绝缘膜覆盖。 存储栅电极相对于帽绝缘膜与从帽绝缘膜露出的分流部的上表面之间的边界在帽绝缘膜侧终止。
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公开(公告)号：US09570610B2
公开(公告)日：2017-02-14
申请号：US15093048
申请日：2016-04-07
IPC分类号： H01L29/78 , H01L21/285 , H01L29/66 , H01L21/28 , H01L21/3105 , H01L27/092 , H01L29/423 , H01L27/115 , H01L21/8234
CPC分类号： H01L29/7847 , H01L21/28282 , H01L21/28518 , H01L21/3105 , H01L21/823412 , H01L21/823418 , H01L21/823468 , H01L27/0922 , H01L27/1157 , H01L27/11573 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833
摘要： To improve a semiconductor device having a nonvolatile memory. A first MISFET, a second MISFET, and a memory cell are formed, and a stopper film made of a silicon oxide film is formed thereover. Then, over the stopper film, a stress application film made of a silicon nitride film is formed, and the stress application film over the second MISFET and the memory cell is removed. Thereafter, heat treatment is performed to apply a stress to the first MISFET. Thus, a SMT is not applied to each of elements, but is applied selectively. This can reduce the degree of degradation of the second MISFET due to H (hydrogen) in the silicon nitride film forming the stress application film. This can also reduce the degree of degradation of the characteristics of the memory cell due to the H (hydrogen) in the silicon nitride film forming the stress application film.
摘要翻译： 改善具有非易失性存储器的半导体器件。 形成第一MISFET，第二MISFET和存储单元，并在其上形成由氧化硅膜制成的阻挡膜。 然后，在阻挡膜上形成由氮化硅膜构成的应力施加膜，除去第二MISFET和存储单元上的应力施加膜。 此后，进行热处理以向第一MISFET施加应力。 因此，SMT不应用于每个元件，而是被选择性地应用。 这可以降低由于形成应力施加膜的氮化硅膜中的H（氢）导致的第二MISFET的劣化程度。 这也可以由于形成应力施加膜的氮化硅膜中的H（氢）而降低存储单元的特性的劣化程度。
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公开(公告)号：US09263291B2
公开(公告)日：2016-02-16
申请号：US14079120
申请日：2013-11-13
IPC分类号： H01L21/44 , H01L21/3105 , H01L27/092 , H01L29/423 , H01L29/66 , H01L27/115 , H01L21/8234
CPC分类号： H01L29/7847 , H01L21/28282 , H01L21/28518 , H01L21/3105 , H01L21/823412 , H01L21/823418 , H01L21/823468 , H01L27/0922 , H01L27/1157 , H01L27/11573 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833
摘要： To improve a semiconductor device having a nonvolatile memory. a first MISFET, a second MISFET, and a memory cell are formed, and a stopper film made of a silicon oxide film is formed thereover. Then, over the stopper film, a stress application film made of a silicon nitride film is formed, and the stress application film over the second MISFET and the memory cell is removed. Thereafter, heat treatment is performed to apply a stress to the first MISFET. Thus, a SMT is not applied to each of elements, but is applied selectively. This can reduce the degree of degradation of the second MISFET due to H (hydrogen) in the silicon nitride film forming the stress application film. This can also reduce the degree of degradation of the characteristics of the memory cell due to the H (hydrogen) in the silicon nitride film forming the stress application film.
摘要翻译： 改善具有非易失性存储器的半导体器件。 形成第一MISFET，第二MISFET和存储单元，并在其上形成由氧化硅膜制成的阻挡膜。 然后，在阻挡膜上形成由氮化硅膜构成的应力施加膜，除去第二MISFET和存储单元上的应力施加膜。 此后，进行热处理以向第一MISFET施加应力。 因此，SMT不应用于每个元件，而是被选择性地应用。 这可以降低由于形成应力施加膜的氮化硅膜中的H（氢）导致的第二MISFET的劣化程度。 这也可以由于形成应力施加膜的氮化硅膜中的H（氢）而降低存储单元的特性的劣化程度。
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公开(公告)号：US08975678B2
公开(公告)日：2015-03-10
申请号：US13867213
申请日：2013-04-22
IPC分类号： H01L49/02 , H01L27/06 , H01L27/08 , H01L27/105 , H01L27/115
CPC分类号： H01L28/60 , H01L27/0629 , H01L27/0805 , H01L27/105 , H01L27/10805 , H01L27/11526 , H01L27/11531 , H01L27/11573 , H01L28/40
摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.
摘要翻译： 关于包括电容器元件的半导体器件，提供了一种能够提高电容器元件的可靠性的技术。 电容器元件形成在半导体衬底上形成的元件隔离区域中。 电容器元件包括通过电容器绝缘膜形成在下电极上的下电极和上电极。 基本上，下电极和上电极由形成在多晶硅膜的表面上的多晶硅膜和硅化钴膜形成。 形成在上电极上的钴硅化物膜的端部与上电极的端部间隔开一定距离。 此外，形成在下电极上的钴硅化物膜的端部与上电极和下电极之间的边界间隔一定距离。
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公开(公告)号：US09373630B2
公开(公告)日：2016-06-21
申请号：US14989999
申请日：2016-01-07
IPC分类号： H01L21/8234 , H01L27/115 , H01L27/092
CPC分类号： H01L29/7847 , H01L21/28282 , H01L21/28518 , H01L21/3105 , H01L21/823412 , H01L21/823418 , H01L21/823468 , H01L27/0922 , H01L27/1157 , H01L27/11573 , H01L29/42324 , H01L29/4234 , H01L29/66825 , H01L29/66833
摘要： To improve a semiconductor device having a nonvolatile memory. A first MISFET, a second MISFET, and a memory cell are formed, and a stopper film made of a silicon oxide film is formed thereover. Then, over the stopper film, a stress application film made of a silicon nitride film is formed, and the stress application film over the second MISFET and the memory cell is removed. Thereafter, heat treatment is performed to apply a stress to the first MISFET. Thus, a SMT is not applied to each of elements, but is applied selectively. This can reduce the degree of degradation of the second MISFET due to H (hydrogen) in the silicon nitride film forming the stress application film. This can also reduce the degree of degradation of the characteristics of the memory cell due to the H (hydrogen) in the silicon nitride film forming the stress application film.
摘要翻译： 改善具有非易失性存储器的半导体器件。 形成第一MISFET，第二MISFET和存储单元，并在其上形成由氧化硅膜制成的阻挡膜。 然后，在阻挡膜上形成由氮化硅膜构成的应力施加膜，除去第二MISFET和存储单元上的应力施加膜。 此后，进行热处理以向第一MISFET施加应力。 因此，SMT不应用于每个元件，而是被选择性地应用。 这可以降低由于形成应力施加膜的氮化硅膜中的H（氢）导致的第二MISFET的劣化程度。 这也可以由于形成应力施加膜的氮化硅膜中的H（氢）而降低存储单元的特性的劣化程度。
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公开(公告)号：US09755012B2
公开(公告)日：2017-09-05
申请号：US15256285
申请日：2016-09-02
IPC分类号： H01L49/02 , H01L27/06 , H01L27/08 , H01L27/105 , H01L27/11526 , H01L27/11531 , H01L27/108 , H01L27/11573 , H01L27/115
CPC分类号： H01L28/60 , H01L27/0629 , H01L27/0805 , H01L27/105 , H01L27/10805 , H01L27/11526 , H01L27/11531 , H01L27/11573 , H01L28/40
摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.
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公开(公告)号：US09461105B2
公开(公告)日：2016-10-04
申请号：US14636311
申请日：2015-03-03
IPC分类号： H01L49/02 , H01L27/108 , H01L27/06 , H01L27/08 , H01L27/105 , H01L27/115
CPC分类号： H01L28/60 , H01L27/0629 , H01L27/0805 , H01L27/105 , H01L27/10805 , H01L27/11526 , H01L27/11531 , H01L27/11573 , H01L28/40
摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.
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公开(公告)号：US09379127B2
公开(公告)日：2016-06-28
申请号：US14745340
申请日：2015-06-19
发明人： Koichi Toba , Yasushi Ishii , Hiraku Chakihara , Kota Funayama , Yoshiyuki Kawashima , Takashi Hashimoto
IPC分类号： H01L29/792 , H01L27/115 , H01L21/28 , H01L29/423
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/11573 , H01L29/42344 , H01L29/792
摘要： A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.
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