公开(公告)号：US20230260989A1

公开(公告)日：2023-08-17

申请号：US18303257

申请日：2023-04-19

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L27/06 ,  H03K17/042 ,  H03K17/16 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L27/0629 ,  H03K17/04206 ,  H03K17/165 ,  H01L29/0696 ,  H01L29/7804 ,  H01L29/7802

Abstract: A semiconductor device includes a semiconductor layer, a first conductor disposed on the semiconductor layer, a second conductor disposed on the semiconductor layer so as to be separated from the first conductor, a relay portion that is formed on the semiconductor layer so as to straddle the first conductor and the second conductor and that is made of a semiconductor having a first conductivity type region and a second conductivity type region, a first contact by which the first conductivity type region and the second conductivity type region are electrically connected to the first conductor, and a second contact that electrically connects the first conductivity type region of the relay portion and the second conductor together and that is insulated from the second conductivity type region.

公开(公告)号：US20230246103A1

公开(公告)日：2023-08-03

申请号：US18091425

申请日：2022-12-30

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/4236 ,  H01L29/66734

Abstract: A semiconductor device includes: a semiconductor substrate including a main surface and a back surface opposite to the main surface; a semiconductor layer including a first surface in contact with the main surface of the semiconductor substrate and a second surface opposite to the first surface, and including a gate trench recessed in the second surface; a split gate structure provided in the gate trench; an insulating layer filling the gate trench and covering the second surface of the semiconductor layer; and a trap level region formed in any one of the semiconductor layer and the semiconductor substrate to trap carriers moving from the semiconductor layer.

公开(公告)号：US20160163790A1

公开(公告)日：2016-06-09

申请号：US14958690

申请日：2015-12-03

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L29/06 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7397 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

Abstract: A semiconductor device that includes: a semiconductor layer of a first conductivity type, having a peripheral area and a cell area inside of the peripheral area; a region of a second conductivity type in the semiconductor layer in the cell area; and a plurality of guard rings of the second conductivity type in the semiconductor layer in the peripheral area, each having a substantially same depth as the region of the second conductivity type in the cell area. The plurality of guard rings include at least one first ring that has a diffusion region in the depth profile in the semiconductor layer that is wider at a top thereof.

Abstract translation: 一种半导体器件，包括：第一导电类型的半导体层，具有外围区域和周边区域内部的单元区域; 电池区域中的半导体层中的第二导电类型的区域; 以及在周边区域的半导体层中具有第二导电类型的多个保护环，每个具有与单元区域中的第二导电类型的区域基本相同的深度。 多个保护环包括至少一个第一环，其在半导体层中的深度分布中具有在其顶部较宽的扩散区域。

公开(公告)号：US20200312955A1

公开(公告)日：2020-10-01

申请号：US16823938

申请日：2020-03-19

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor layer having a first surface and a second surface, a first region of a first conductivity type formed on the first surface side of the semiconductor layer, a second region of a second conductivity type in contact with the first region, a third region of the first conductivity type that is in contact with the second region and exposed from the first surface side of the semiconductor layer, a gate electrode facing the second region through a gate insulating film, a first electrode that is physically separated from the gate electrode and faces the second region and the third region through an insulating film, a second electrode formed on the semiconductor layer and electrically connected to the first region, the second region, and the first electrode, and a third electrode electrically connected to the third region.

公开(公告)号：US20170077272A1

公开(公告)日：2017-03-16

申请号：US15264069

申请日：2016-09-13

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L29/739 ,  H02M7/5387 ,  H01L23/00 ,  H02P27/08 ,  H01L29/10 ,  H01L23/31

CPC classification number: H01L29/7393 ,  H01L23/3107 ,  H01L24/09 ,  H01L29/0634 ,  H01L29/1095 ,  H01L2224/04042 ,  H02M7/5387 ,  H02M7/53875 ,  H02M2001/0048 ,  H02P27/08 ,  Y02B70/1491

Abstract: A semiconductor device includes a conductivity type drain layer, a conductivity type drift layer, conductivity type base regions located in an upper surface of the drift layer, a conductivity type source region which is disposed inside each of the base regions and is spaced apart from the periphery of the base region, and a channel region is formed between the source region and the periphery of the base region. The semiconductor device further includes a gate insulating layer covering the channel region, a gate electrode which is located on the gate insulating layer and faces the channel region, a plurality of conductivity type column regions, each extends from the plurality of base regions to the drain layer in the drift layer, a trap level forming region in the drift layer, a drain electrode electrically connected to the drain layer, and a source electrode electrically connected to the source region.

Abstract translation: 半导体器件包括导电类型漏极层，导电型漂移层，位于漂移层的上表面中的导电类型基极区域，设置在每个基极区域内并与其相隔的导电型源极区域 并且在源极区域和基极区域的周边之间形成沟道区域。 半导体器件还包括覆盖沟道区的栅极绝缘层，位于栅极绝缘层上且面向沟道区的栅电极，多个导电型列区域从多个基极区域延伸到漏极 漂移层中的陷阱电平形成区域，电连接到漏极层的漏电极和与源极区域电连接的源电极。

公开(公告)号：US20170288021A1

公开(公告)日：2017-10-05

申请号：US15461018

申请日：2017-03-16

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L29/15 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78

CPC classification number: H01L29/1095 ,  H01L21/263 ,  H01L21/268 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/167 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7813

Abstract: A semiconductor device includes a semiconductor layer, having a drain region, a body region, and a source region, a gate electrode, facing the body region via a gate insulating film, a first pillar layer disposed inside the semiconductor layer so as to be continuous to the body region, and a trap level region, disposed inside the semiconductor layer and containing charged particles that form a trap level, and an electric field concentration portion, where an electric field concentrates in an off state in which a channel is not formed in the body region, and the trap level region are disposed at mutually different depth positions in a depth direction of the first pillar layer.

公开(公告)号：US20230155020A1

公开(公告)日：2023-05-18

申请号：US17913166

申请日：2021-03-22

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/06 ,  H01L29/739 ,  H01L21/22 ,  H01L21/265

CPC classification number: H01L29/7805 ,  H01L29/0634 ,  H01L27/0664 ,  H01L29/7395 ,  H01L29/7813 ,  H01L21/221 ,  H01L21/26513

Abstract: A semiconductor device includes a semiconductor layer having a first surface and a second surface, an element structure formed on the first surface side of the semiconductor layer and including a first conductivity type first region and a second conductivity type second region in contact with the first region, a gate electrode opposing the second region with a gate insulating film therebetween, a first conductivity type third region formed in the semiconductor layer to be in contact with the second region, and a first electrode formed on the semiconductor layer and electrically connected to the first region and the second region, in which the element structure includes a first and a second element structure, the first element structure is separated from the second region in a direction along the first surface of the semiconductor layer, and includes a second conductivity type first column layer extending in a thickness direction.

公开(公告)号：US20210074698A1

公开(公告)日：2021-03-11

申请号：US17040420

申请日：2019-03-29

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L27/06 ,  H03K17/16 ,  H03K17/042

Abstract: A semiconductor device includes a semiconductor layer, a first conductor disposed on the semiconductor layer, a second conductor disposed on the semiconductor layer so as to be separated from the first conductor, a relay portion that is formed on the semiconductor layer so as to straddle the first conductor and the second conductor and that is made of a semiconductor having a first conductivity type region and a second conductivity type region, a first contact by which the first conductivity type region and the second conductivity type region are electrically connected to the first conductor, and a second contact that electrically connects the first conductivity type region of the relay portion and the second conductor together and that is insulated from the second conductivity type region.

公开(公告)号：US20180219092A1

公开(公告)日：2018-08-02

申请号：US15879753

申请日：2018-01-25

Applicant: ROHM CO., LTD.

Inventor： Yusuke KUBO

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L21/265 ,  H03K17/16 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L21/28

CPC classification number: H01L29/7811 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/26513 ,  H01L21/28211 ,  H01L21/30655 ,  H01L21/324 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66712 ,  H03K17/161

Abstract: A semiconductor device includes a first conductivity type semiconductor layer including an active cell portion and an outer peripheral portion around the active cell portion, a second conductivity type body region selectively formed at a surface portion of the semiconductor layer in the active cell portion, a first conductivity type source region formed at an inner part of the body region, a gate electrode that faces a part of the body region through a gate insulating film, a second conductivity type column layer straddling a boundary between the active cell portion and the outer peripheral portion inside the semiconductor layer such that the column layer is disposed at a lower part of the body region in the active cell portion, a source electrode that is electrically connected to the source region, and an outer peripheral electrode that is electrically connected to the column layer in the outer peripheral portion.