公开(公告)号：US10396547B2

公开(公告)日：2019-08-27

申请号：US15702327

申请日：2017-09-12

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryo Kanda ,  Hiroshi Kuroiwa ,  Tetsu Toda ,  Yasushi Nakahara

IPC: H02H7/08 ,  H02H1/04 ,  H01L29/40 ,  H01L29/78 ,  H01L29/861 ,  H03K17/0416 ,  H03K17/082

Abstract: To realize a reduction in the number of parts in a system including a driver IC (semiconductor device). A high potential side power supply voltage is applied to a power supply application area. A high side area is formed with a circuit which includes a driver driving a high side transistor and is operated at a boot power supply voltage with a floating voltage as a reference. A low side area is formed with a circuit operated at a power supply voltage with a low potential side power supply voltage as a reference. A first termination area is disposed in a ring form so as to surround the power supply application area. A second termination area is disposed in a ring form so as to surround the high side area.

公开(公告)号：US10008919B2

公开(公告)日：2018-06-26

申请号：US15043253

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Azuma Araya ,  Ryo Kanda ,  Tomonobu Kurihara ,  Tetsu Toda

IPC: G05F1/565 ,  G05F1/00 ,  H03K17/687 ,  H02M1/088 ,  H01L27/06 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L27/092 ,  H01L29/10 ,  H01L29/40 ,  H01L29/08 ,  H01L29/423

CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

Abstract: A method of controlling a power supply to a semiconductor device including a first region having a high-side drive circuit, a second region having a signal processing circuit, a low-side drive circuit and a voltage control circuit, and a separation region formed between the first and second regions and having a rectifying element, includes turning on a first control signal to the voltage control circuit, turning off the first control signal to the voltage control circuit, and repeating the turning on of the first control signal and the turning off the first control signal.

公开(公告)号：US09866207B2

公开(公告)日：2018-01-09

申请号：US15387270

申请日：2016-12-21

Applicant: Renesas Electronics Corporation

Inventor： Ryo Kanda ,  Tetsu Toda ,  Junichi Nakamura ,  Kazuyuki Umezu ,  Tomonobu Kurihara ,  Takahiro Nagatsu ,  Yasushi Nakahara ,  Yoshinori Kaya

IPC: H02P27/04 ,  H03K3/356 ,  H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H03K17/567

CPC classification number: H03K3/356182 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/408 ,  H01L29/7823 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H02P27/06 ,  H03K5/24 ,  H03K17/567 ,  H03K17/6872 ,  H03K19/018521

Abstract: A driver integrated circuit includes a bootstrap circuit (BSC) configured to output a boot power supply voltage (VB) based on a first power supply voltage, the boot power supply voltage being higher than the first power supply voltage; a level shift circuit (LSC) configured to output an output pulse signal based on an input pulse signal and the boot power supply voltage; a high side driving circuit (HSU) configured to output a high side driving voltage based on the boot power supply voltage and the output pulse signal, wherein the bootstrap circuit includes a sense metal oxide semiconductor (MOS) transistor and a boot MOS transistor, wherein the sense MOS transistor includes a depression-type transistor.

公开(公告)号：US10038059B2

公开(公告)日：2018-07-31

申请号：US15203981

申请日：2016-07-07

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H03K3/356 ,  H03K17/06

CPC classification number: H01L29/1087 ,  H01L21/76224 ,  H01L27/0922 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7823 ,  H01L29/7835 ,  H01L29/7838 ,  H03K3/356 ,  H03K17/06 ,  H03K2217/0063 ,  H03K2217/0072 ,  H03K2217/0081

Abstract: An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a coupling transistor made of a p-channel MOSFET and formed in an n−-type semiconductor region over a base made of a p-type semiconductor. The coupling transistor has a resurf layer as a p-type semiconductor region and couples a lower-voltage circuit region to a higher-voltage circuit region to which a power supply potential higher than the power supply potential supplied to the lower-voltage circuit region is supplied. The semiconductor device has a p-type semiconductor region formed in the portion of the n−-type semiconductor region which surrounds the coupling transistor in plan view.

公开(公告)号：US10008561B2

公开(公告)日：2018-06-26

申请号：US14977355

申请日：2015-12-21

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Ryo Kanda ,  Tetsu Toda

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L27/02 ,  H03K19/0175 ,  H01L27/092 ,  H01L29/423

CPC classification number: H01L29/0619 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H03K19/017509

Abstract: A semiconductor device including a first circuit region in which a first circuit whose power supply potential is a first voltage is formed; a second circuit region in which a second circuit whose power supply potential is a second voltage lower than the first voltage is formed a separation region which separates the first circuit region from the second circuit region; and a transistor which is located in the separation region and couples the second circuit to the first circuit and whose source and drain are of a first conductivity type, the separation region including an element separation film; a first field plate which overlaps with the element separation film in plan view; a plurality of conductive films which are provided over the first field plate.

公开(公告)号：US09559687B2

公开(公告)日：2017-01-31

申请号：US14832867

申请日：2015-08-21

Applicant: Renesas Electronics Corporation

Inventor： Ryo Kanda ,  Tetsu Toda ,  Junichi Nakamura ,  Kazuyuki Umezu ,  Tomonobu Kurihara ,  Takahiro Nagatsu ,  Yasushi Nakahara ,  Yoshinori Kaya

IPC: H02P27/04 ,  H03K17/687 ,  H03K19/0185 ,  H03K5/24 ,  H03K17/567 ,  H02P27/06

CPC classification number: H03K3/356182 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/408 ,  H01L29/7823 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/4903 ,  H02P27/06 ,  H03K5/24 ,  H03K17/567 ,  H03K17/6872 ,  H03K19/018521

Abstract: In order to reduce the cost and the like of a power control device including a semiconductor device such as a driver IC, as well as an electronic system, the driver IC includes a high side driver, a level shift circuit, first and second transistors, and a comparator circuit. The first transistor is formed in a termination area. The second transistor is formed in the termination region and is driven by a first power supply voltage. The comparator circuit is formed in a first region to drive the first transistor to be ON when the voltage of a sense node is lower than the first power supply voltage, while driving the first transistor to be OFF when the voltage of the sense node is higher than the first power supply voltage. The second transistor is a depression type transistor.

Abstract translation: 为了降低包括诸如驱动器IC的半导体器件的电力控制装置以及电子系统的成本等，驱动器IC包括高侧驱动器，电平移位电路，第一和第二晶体管， 和比较器电路。 第一晶体管形成在终端区域中。 第二晶体管形成在终端区域中并由第一电源电压驱动。 当感测节点的电压低于第一电源电压时，比较器电路形成在第一区域中以驱动第一晶体管导通，同时当感测节点的电压更高时驱动第一晶体管截止 比第一个电源电压。 第二晶体管是凹陷型晶体管。

公开(公告)号：US08952483B2

公开(公告)日：2015-02-10

申请号：US14095304

申请日：2013-12-03

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara

IPC: H01L21/70 ,  H01L27/02 ,  H01L27/06 ,  H01L27/08

CPC classification number: H01L27/0207 ,  H01L21/761 ,  H01L27/0635 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66128 ,  H01L29/861 ,  H01L29/8611

Abstract: A potential isolation element is provided separately from a diode. An n-type low-concentration region is formed on a P-type layer. A first high-concentration N-type region is positioned in the n-type low-concentration region and is connected to a cathode electrode of the diode. A second high-concentration N-type region is positioned in the n-type low-concentration region, is disposed to be spaced from a first second-conduction-type high-concentration region, and is connected to a power supply interconnection of a first circuit. A first P-type region is formed in the n-type low-concentration region, and a bottom portion thereof is connected to the P-type layer. A ground potential is applied to the first P-type region, and the first P-type region is positioned in the vicinity of the first high-concentration N-type region.

Abstract translation: 与二极管分开提供电势隔离元件。 在P型层上形成n型低浓度区域。 第一高浓度N型区域位于n型低浓度区域中并且连接到二极管的阴极电极。 第二高浓度N型区域位于n型低浓度区域中，与第一第二导电型高浓度区域隔开，并且与第一高浓度区域的电源互连 电路。 在n型低浓度区域形成第一P型区域，其底部与P型层连接。 对第一P型区域施加接地电位，第一P型区域位于第一高浓度N型区域附近。

公开(公告)号：US20160164398A1

公开(公告)日：2016-06-09

申请号：US15043253

申请日：2016-02-12

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Azuma Araya ,  Ryo Kanda ,  Tomonobu Kurihara ,  Tetsu Toda

IPC: H02M1/088 ,  H01L29/78 ,  H01L29/06

CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

Abstract: A method of controlling a power supply to a semiconductor device including a first region having a high-side drive circuit, a second region having a signal processing circuit, a low-side drive circuit and a voltage control circuit, and a separation region formed between the first and second regions and having a rectifying element, includes turning on a first control signal to the voltage control circuit, turning off the first control signal to the voltage control circuit, and repeating the turning on of the first control signal and the turning off the first control signal.

Abstract translation: 一种控制对包括具有高侧驱动电路的第一区域，具有信号处理电路的第二区域，低侧驱动电路和电压控制电路的第一区域的半导体器件的电源的控制方法以及形成在 第一和第二区域并具有整流元件，包括将第一控制信号接通到电压控制电路，将第一控制信号切断到电压控制电路，并重复第一控制信号的接通和关断 第一个控制信号。

公开(公告)号：US09356093B2

公开(公告)日：2016-05-31

申请号：US14711754

申请日：2015-05-13

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L21/761 ,  H01L27/02 ,  H01L29/423 ,  H01L29/08 ,  H01L21/8234

CPC classification number: H01L29/0642 ,  H01L21/761 ,  H01L21/823481 ,  H01L27/0207 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816

Abstract: An isolation region includes an element isolation film and a field plate electrode. The field plate electrode overlaps the element isolation film and surrounds a first circuit when seen in a plan view. A part of the field plate electrode is also positioned on a connection transistor. A source and a drain of the connection transistor are opposite to each other through the field plate electrode when seen in a plan view. In addition, the field plate electrode is divided into a first portion including a portion that is positioned on the connection transistor, and a second portion other than the first portion.

公开(公告)号：US20160148995A1

公开(公告)日：2016-05-26

申请号：US14977355

申请日：2015-12-21

Applicant: Renesas Electronics Corporation

Inventor： Yoshinori Kaya ,  Yasushi Nakahara ,  Ryo Kanda ,  Tetsu Toda

IPC: H01L29/06 ,  H01L27/02 ,  H01L29/40 ,  H03K19/0175 ,  H01L29/78

CPC classification number: H01L29/0619 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H03K19/017509

Abstract: A semiconductor device including a first circuit region in which a first circuit whose power supply potential is a first voltage is formed; a second circuit region in which a second circuit whose power supply potential is a second voltage lower than the first voltage is formed a separation region which separates the first circuit region from the second circuit region; and a transistor which is located in the separation region and couples the second circuit to the first circuit and whose source and drain are of a first conductivity type, the separation region including an element separation film; a first field plate which overlaps with the element separation film in plan view; a plurality of conductive films which are provided over the first field plate.

Abstract translation: 一种半导体器件，包括形成第一电路的第一电路区域，其中第一电路的电源电位为第一电压; 电源电位低于第一电压的第二电压的第二电路形成第二电路区域，该分离区域将第一电路区域与第二电路区域分离; 以及晶体管，其位于所述分离区域中并且将所述第二电路耦合到所述第一电路，并且其源极和漏极是第一导电类型，所述分离区域包括元件分离膜; 在平面图中与元件分离膜重叠的第一场板; 设置在第一场板上的多个导电膜。