Abstract:
A conductive interconnect includes an inorganic collar. The conductive interconnect includes a conductive support layer. The conductive interconnect also includes a conductive material on the conductive support layer. The conductive interconnect further includes an inorganic collar partially surrounding the conductive material. The inorganic collar is also disposed on sidewalls of the conductive support layer.
Abstract:
Some exemplary embodiments of this disclosure pertain to a semiconductor package that includes a packaging substrate, a die and a set of under bump metallization (UBM) structures coupled to the packaging substrate and the die. Each UBM structure has a non-circular cross-section along its respective lateral dimension. Each UBM structure includes a first narrower portion and a second wider portion. The first narrower portion has a first width. The second wider portion has a second width that is greater than the first width. Each UBM structure is oriented towards a particular region of the die such that the first narrower portion of the UBM structure is closer than the second wider portion of the UBM structure to the particular region of the die.