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    MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES
    2.
    发明申请
    MAGNESIUM OXIDE CAPPING WITH A SHORTED PATH FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES 有权
    带有短路径的氧化镁填料，用于普通磁性隧道接头装置

    公开(公告)号：US20160072043A1

    公开(公告)日：2016-03-10

    申请号：US14483104

    申请日：2014-09-10

    Applicant: QUALCOMM Incorporated

    Inventor： Chando PARK ,  Kangho LEE ,  Jimmy KAN ,  Matthias Georg Gottwald ,  Xiaochun ZHU ,  Seung Hyuk KANG

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

    CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.

    Abstract translation: 磁性隧道结（MTJ）装置包括钉扎层，钉扎层上的隧道势垒层和隧道势垒层上的自由层。 MTJ装置还包括在自由层上的垂直磁各向异性（PMA）增强层，PMA增强层上的覆盖层以及电封闭封盖层，PMA增强层和自由层的导电路径。 制造垂直磁性隧道结（pMTJ）器件的方法包括形成覆盖层，垂直磁性各向异性（PMA）增强层和自由层。 该方法还包括形成导电层以缩短封盖层，PMA增强层和自由层。

    SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAGE-CONTROLLED ANISOTROPY
    3.
    发明申请
    SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAGE-CONTROLLED ANISOTROPY 有权
    具有电压控制的异步电动机的旋转扭矩磁阻随机存取存储器

    公开(公告)号：US20160267961A1

    公开(公告)日：2016-09-15

    申请号：US15158658

    申请日：2016-05-19

    Applicant: QUALCOMM Incorporated

    Inventor： Kangho LEE ,  Jimmy KAN ,  Seung Hyuk KANG

    IPC: G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

    CPC classification number: G11C11/1675 ,  G11C8/005 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same

    Abstract translation: 公开了具有电压控制各向异性的自旋轨道转矩磁阻随机存取存储器的方法和装置。 在一个实例中，公开了通过压控磁各向异性（VCMA）和自旋 - 轨道转矩（SOT）技术的组合来编程的三端磁隧道结（MTJ）存储元件。 还公开了一种被配置为经由VCMA和SOT技术对三端MTJ存储元件进行编程的存储器控​​制器。 所公开的设备通过使用较少的写入能量来提高与传统设备的效率，同时具有比常规设备更简单和更可扩展的设计。 所公开的装置还具有增加的热稳定性，而不增加所需的开关电流，因为状态之间的关键开关电流基本相同

    SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAGE-CONTROLLED ANISOTROPY
    5.
    发明申请
    SPIN-ORBIT-TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH VOLTAGE-CONTROLLED ANISOTROPY 有权
    具有电压控制的异步电动机的旋转扭矩磁阻随机存取存储器

    公开(公告)号：US20160232959A1

    公开(公告)日：2016-08-11

    申请号：US14617919

    申请日：2015-02-09

    Applicant: QUALCOMM Incorporated

    Inventor： Kangho LEE ,  Jimmy KAN ,  Seung Hyuk KANG

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C8/005 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/18 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Methods and apparatus relating to spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy are disclosed. In an example, disclosed is a three-terminal magnetic tunnel junction (MTJ) storage element that is programmed via a combination of voltage-controlled magnetic anisotropy (VCMA) and spin-orbit torque (SOT) techniques. Also disclosed is a memory controller configured to program the three-terminal MTJ storage element via VCMA and SOT techniques. The disclosed devices improve efficiency over conventional devices by using less write energy, while having a design that is simpler and more scalable than conventional devices. The disclosed devices also have increased thermal stability without increasing required switching current, as critical switching current between states is essentially the same.

    Abstract translation: 公开了具有电压控制各向异性的自旋轨道转矩磁阻随机存取存储器的方法和装置。 在一个实例中，公开了通过压控磁各向异性（VCMA）和自旋 - 轨道转矩（SOT）技术的组合来编程的三端磁隧道结（MTJ）存储元件。 还公开了一种被配置为经由VCMA和SOT技术对三端MTJ存储元件进行编程的存储器控​​制器。 所公开的设备通过使用较少的写入能量来提高与传统设备的效率，同时具有比常规设备更简单和更可扩展的设计。 所公开的装置还具有增加的热稳定性，而不增加所需的开关电流，因为状态之间的关键开关电流基本相同。

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