公开(公告)号：US20170186942A1

公开(公告)日：2017-06-29

申请号：US15458641

申请日：2017-03-14

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Xiaochun ZHU ,  Matthias Georg GOTTWALD ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

公开(公告)号：US20160284988A1

公开(公告)日：2016-09-29

申请号：US15173567

申请日：2016-06-03

Applicant: QUALCOMM INCORPORATED

Inventor： Matthias Georg GOTTWALD ,  Jimmy KAN ,  Kangho LEE ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

公开(公告)号：US20160005955A1

公开(公告)日：2016-01-07

申请号：US14321516

申请日：2014-07-01

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Matthias Georg GOTTWALD ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

公开(公告)号：US20160233418A1

公开(公告)日：2016-08-11

申请号：US15133018

申请日：2016-04-19

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Matthias Georg GOTTWALD ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

Abstract translation: 提供磁阻随机存取存储器（MRAM）中的磁隧道结（MTJ）器件及其制造方法，以实现高隧道磁阻（TMR），高垂直磁各向异性（PMA），良好的数据保留和 高水平的热稳定性。 MTJ装置包括第一自由铁磁层，合成反铁磁（SAF）耦合层和第二自由铁磁层，其中第一和第二自由铁磁层具有相反的磁矩。

公开(公告)号：US20160181508A1

公开(公告)日：2016-06-23

申请号：US14581361

申请日：2014-12-23

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Xiaochun ZHU ,  Matthias Georg GOTTWALD ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

Abstract translation: 垂直磁隧道结（MTJ）的合成反铁磁（SAF）参考层的材料堆可以包括SAF耦合层。 材料堆叠还可以包括SAF耦合层上的无定形间隔层。 非晶间隔层可以包括钽和钴或钽和铁或钴以及铁和钽的合金或多层。 非晶间隔层还可以包括SAF耦合层的处理表面。

公开(公告)号：US20150311427A1

公开(公告)日：2015-10-29

申请号：US14334015

申请日：2014-07-17

Applicant: QUALCOMM Incorporated

Inventor： Matthias Georg GOTTWALD ,  Jimmy KAN ,  Kangho LEE ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

Abstract translation: 用于制造垂直磁性隧道结（pMTJ）器件的方法包括在pMTJ器件的第一电极上生长晶种层。 种子层沿生长轴具有均匀的预定晶体取向。 该方法还包括平面化种子层，同时保持种子层的均匀的预定晶体取向。