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    SOLID-STATE IMAGE PICKUP DEVICE
    1.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE 有权
    固态图像拾取器件

    公开(公告)号：US20150288895A1

    公开(公告)日：2015-10-08

    申请号：US14745270

    申请日：2015-06-19

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Hideo MATSUYA ,  Ryohei MIYAGAWA

    IPC: H04N5/341 ,  H04N5/374 ,  H04N5/378 ,  H04N5/225

    CPC classification number: H04N5/341 ,  H04N5/2258 ,  H04N5/374 ,  H04N5/378

    Abstract: A solid-state image pickup device includes: a first pixel array which generates first pixel data; a second pixel array which generates second pixel data; a vertical scanning unit which drives the rows of the first pixel array and the rows of the second pixel array independently; and a signal processing circuit which outputs, as a single image signal, a pair of (i) the plurality of second pixel signals generated in the second pixel array in a first frame and (ii) the plurality of first pixel signals generated in the first pixel array in a second frame immediately after the first frame.

    Abstract translation: 一种固态图像拾取装置，包括：产生第一像素数据的第一像素阵列; 产生第二像素数据的第二像素阵列; 垂直扫描单元，其独立地驱动第一像素阵列的行和第二像素阵列的行; 以及信号处理电路，其作为单个图像信号输出（i）在第一帧中在第二像素阵列中生成的多个第二像素信号，以及（ii）在第一帧中产生的多个第一像素信号 在第一帧之后的第二帧中的像素阵列。

    SOLID-STATE IMAGING DEVICE
    2.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20190013340A1

    公开(公告)日：2019-01-10

    申请号：US16130664

    申请日：2018-09-13

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Tokuhiko TAMAKI ,  Hirohisa OHTSUKI ,  Ryohei MIYAGAWA ,  Motonori ISHII

    IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/369

    CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/3698 ,  H04N5/3745

    Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage;and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

    SOLID-STATE IMAGING DEVICE
    4.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20150137199A1

    公开(公告)日：2015-05-21

    申请号：US14572046

    申请日：2014-12-16

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Mitsuyoshi MORI ,  Ryohei MIYAGAWA ,  Yoshiyuki OHMORI ,  Yoshihiro SATO ,  Yutaka HIROSE ,  Yusuke SAKATA ,  Toru OKINO

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/307

    Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

    Abstract translation: 根据本公开的固态成像装置包括：电荷存储区域，其在光电转换膜中存储通过光电转换获得的信号电荷; 放大晶体管，其放大存储在相应像素中的电荷存储区域中的信号电荷; 接触插塞，其电连接到电荷存储区域并且包含半导体材料; 以及设置在接触塞上方并包含半导体材料的线。 接触插塞和电荷存储区域电连接，并且放大晶体管的接触插塞和栅电极经由线电连接。

    SOLID-STATE IMAGING DEVICE
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20150077606A1

    公开(公告)日：2015-03-19

    申请号：US14554037

    申请日：2014-11-25

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Hirohisa OHTSUKI ,  Akira TANAKA ,  Ryohei MIYAGAWA

    IPC: H04N5/374 ,  H04N5/3745

    CPC classification number: H04N5/3741 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14665 ,  H04N5/37457

    Abstract: A pixel includes: a photoelectric conversion unit that photoelectrically converts incident light and has an upper electrode, a lower electrode, and a photoelectric conversion film interposed between the upper electrode and the lower electrode; an amplifying transistor that outputs a signal according to an amount of a signal charge generated in the photoelectric conversion unit; a charge transfer line that connects the lower electrode and the amplifying transistor; and an output line that outputs the signal from the amplifying transistor, wherein at least a part of the output line is disposed to overlap the lower electrode without another line interposed therebetween.

    Abstract translation: 像素包括：光电转换单元，其对入射光进行光电转换，并具有插入在上电极和下电极之间的上电极，下电极和光电转换膜; 放大晶体管，其根据在所述光电转换单元中产生的信号电荷的量输出信号; 连接下电极和放大晶体管的电荷传输线; 以及输出线，其输出来自所述放大晶体管的信号，其中所述输出线的至少一部分设置成与所述下电极重叠，而不插入另一条线。

    SOLID-STATE IMAGING DEVICE
    8.
    发明公开
    SOLID-STATE IMAGING DEVICE 审中-公开

    公开(公告)号：US20230223410A1

    公开(公告)日：2023-07-13

    申请号：US18107834

    申请日：2023-02-09

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Tokuhiko TAMAKI ,  Hirohisa OHTSUKI ,  Ryohei MIYAGAWA ,  Motonori ISHII

    IPC: H01L27/146 ,  H04N25/77

    CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H04N25/77 ,  H01L27/14643 ,  H01L27/14612 ,  H01L27/14636 ,  H04N25/709

    Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

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