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    SOLID-STATE IMAGE SENSOR
    2.
    发明申请
    SOLID-STATE IMAGE SENSOR 有权

    公开(公告)号：US20220310684A1

    公开(公告)日：2022-09-29

    申请号：US17840139

    申请日：2022-06-14

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Yusuke SAKATA ,  Masaki TAMARU ,  Mitsuyoshi MORI

    IPC: H01L27/146

    Abstract: A solid-state image sensor includes pixel cells each of which is formed in and above a semiconductor substrate and that are arranged in each of a first direction and a second direction intersecting the first direction to form a two-dimensional array. The pixel cells include a first pixel cell and a second pixel cell arranged in the second direction, and the pixel circuit of the first pixel cell and the pixel circuit of the second pixel cell are adjacent to each other in the second direction between the photodetection portion of the first pixel cell and the photodetection portion of the second pixel cell. Each of the first transistors of the first pixel cell shares a gate electrode with the first transistor of the second pixel cell that has the same function as the first transistor of the first pixel cell.

    SOLID-STATE IMAGING DEVICE
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20150137199A1

    公开(公告)日：2015-05-21

    申请号：US14572046

    申请日：2014-12-16

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Mitsuyoshi MORI ,  Ryohei MIYAGAWA ,  Yoshiyuki OHMORI ,  Yoshihiro SATO ,  Yutaka HIROSE ,  Yusuke SAKATA ,  Toru OKINO

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/307

    Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

    Abstract translation: 根据本公开的固态成像装置包括：电荷存储区域，其在光电转换膜中存储通过光电转换获得的信号电荷; 放大晶体管，其放大存储在相应像素中的电荷存储区域中的信号电荷; 接触插塞，其电连接到电荷存储区域并且包含半导体材料; 以及设置在接触塞上方并包含半导体材料的线。 接触插塞和电荷存储区域电连接，并且放大晶体管的接触插塞和栅电极经由线电连接。

    SOLID-STATE IMAGING DEVICE
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权

    公开(公告)号：US20220005855A1

    公开(公告)日：2022-01-06

    申请号：US17479846

    申请日：2021-09-20

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Masaki TAMARU ,  Shigetaka KASUGA ,  Yusuke SAKATA ,  Mitsuyoshi MORI ,  Shinzo KOYAMA

    IPC: H01L27/146

    Abstract: A plurality of pixel cells are provided on a semiconductor substrate and arranged in a two-dimensional array. At least one of the plurality of pixel cells includes a light receiving part, a pixel circuit, and a second transistor. The light receiving part receives an incident light to generate an electrical charge. The pixel circuit includes first transistors arranged side by side along a first direction and a charge retention part that retains the electrical charge generated by the light receiving part. The pixel circuit outputs a light receiving signal in accordance with the electrical charge generated by the light receiving part. The second transistor connects the charge retention part to a memory part that stores the electrical charge. Seen along a thickness direction of the semiconductor substrate, the second transistor is apart from the first transistors in a second direction orthogonal to the first direction.

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