公开(公告)号：US20220014701A1

公开(公告)日：2022-01-13

申请号：US17486495

申请日：2021-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tatsuya KABE ,  Hideyuki ARAI ,  Hisashi AIKAWA ,  Yuki SUGIURA ,  Akito INOUE ,  Mitsuyoshi MORI ,  Kentaro NAKANISHI ,  Yusuke SAKATA

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/374

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

公开(公告)号：US20240121530A1

公开(公告)日：2024-04-11

申请号：US18541932

申请日：2023-12-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tatsuya KABE ,  Hideyuki ARAI ,  Hisashi AIKAWA ,  Yuki SUGIURA ,  Akito INOUE ,  Mitsuyoshi MORI ,  Kentaro NAKANISHI ,  Yusuke SAKATA

IPC: H04N25/75 ,  H01L27/146 ,  H04N25/766

CPC classification number: H04N25/75 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N25/766

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.

公开(公告)号：US20160043060A1

公开(公告)日：2016-02-11

申请号：US14920289

申请日：2015-10-22

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Tatsuya KABE ,  Hideyuki ARAI

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/522

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/5223 ,  H01L23/5227 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L27/0688 ,  H01L28/20 ,  H01L28/40 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05684 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/08145 ,  H01L2224/80097 ,  H01L2224/80201 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/0132 ,  H01L2924/05042 ,  H01L2924/0534 ,  H01L2924/05442 ,  H01L2924/0549 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor device includes: a first substrate including a first surface layer that includes first and second electrodes; a second substrate including a second surface layer that includes third and fourth electrodes, and directly bonded to the first substrate such that the second surface layer is in contact with the first surface layer; and a functional film provided between the second and fourth electrodes. The first and third electrodes are bonded together so as to be in contact with each other, and the second electrode, the functional film, and the fourth electrode constitute a passive element.

Abstract translation: 一种半导体器件包括：第一衬底，包括包括第一和第二电极的第一表面层; 第二基板，其包括包括第三和第四电极的第二表面层，并且直接接合到第一基板，使得第二表面层与第一表面层接触; 以及设置在第二和第四电极之间的功能膜。 第一和第三电极彼此接触结合在一起，并且第二电极，功能膜和第四电极构成无源元件。