公开(公告)号：US20240121530A1

公开(公告)日：2024-04-11

申请号：US18541932

申请日：2023-12-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tatsuya KABE ,  Hideyuki ARAI ,  Hisashi AIKAWA ,  Yuki SUGIURA ,  Akito INOUE ,  Mitsuyoshi MORI ,  Kentaro NAKANISHI ,  Yusuke SAKATA

IPC: H04N25/75 ,  H01L27/146 ,  H04N25/766

CPC classification number: H04N25/75 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N25/766

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.

公开(公告)号：US20150084106A1

公开(公告)日：2015-03-26

申请号：US14555153

申请日：2014-11-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro NAKANISHI ,  Junji HIRASE ,  Kosaku SAEKI ,  Yoshinori TAKAMI ,  Takeshi HIDAKA ,  Tokuhiko TAMAKI

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14689

Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.

Abstract translation: 固态成像装置包括形成在半导体衬底上的单位像素。 每个单位像素包括光电转换器，浮动扩散，钉扎层和像素晶体管。 像素晶体管包括形成在半导体衬底上的栅电极，源极扩散层和漏极扩散层。 源极扩散层或漏极扩散层中的至少一个起到浮动扩散的作用。 钉扎层被像素晶体管的通道的底部和侧面处的浮动扩散覆盖。 浮动扩散的导电类型与钉扎层的导电类型相反。

公开(公告)号：US20220014701A1

公开(公告)日：2022-01-13

申请号：US17486495

申请日：2021-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tatsuya KABE ,  Hideyuki ARAI ,  Hisashi AIKAWA ,  Yuki SUGIURA ,  Akito INOUE ,  Mitsuyoshi MORI ,  Kentaro NAKANISHI ,  Yusuke SAKATA

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/374

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

公开(公告)号：US20240387086A1

公开(公告)日：2024-11-21

申请号：US18789279

申请日：2024-07-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro NAKANISHI

IPC: H01F7/02 ,  H01F7/20 ,  H10N30/20 ,  H10N30/80 ,  H10N30/88

Abstract: A driving element includes a fixation part, a vibration plate supported by the fixation part, a driving part placed on the vibration plate and configured to vibrate the vibration plate, a movable part placed in the vibration plate and configured to be rotated by vibration of the vibration plate, and a displacement suppression part configured to suppress displacement of the vibration plate from a neutral position by a force generated by action of a magnet.

公开(公告)号：US20220310674A1

公开(公告)日：2022-09-29

申请号：US17840167

申请日：2022-06-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro NAKANISHI ,  Tatsuya KABE ,  Mitsuyoshi MORI ,  Shigeru SAITOU

IPC: H01L27/146

Abstract: A semiconductor device includes a semiconductor substrate a pixel region in which an APD is disposed, and a logic region different from the pixel region; a transistor which is disposed in the logic region and includes a sidewall made of an insulating material; an anti-reflective film which is disposed above a main surface of the semiconductor substrate in the pixel region and is made of the insulating material; and a first liner film which is disposed above the main surface of the semiconductor substrate in the logic region and is made of the insulating material. The anti-reflective film and the first liner film are integrally formed. The thickness of the anti-reflective film is larger than or equal to the sum of the thickness of the sidewall and the thickness of the first liner film.