公开(公告)号：US20210193714A1

公开(公告)日：2021-06-24

申请号：US17191437

申请日：2021-03-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro SATO ,  Yoshinori TAKAMI ,  Ryota SAKAIDA

IPC: H01L27/146

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

公开(公告)号：US20150084106A1

公开(公告)日：2015-03-26

申请号：US14555153

申请日：2014-11-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro NAKANISHI ,  Junji HIRASE ,  Kosaku SAEKI ,  Yoshinori TAKAMI ,  Takeshi HIDAKA ,  Tokuhiko TAMAKI

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14689

Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.

Abstract translation: 固态成像装置包括形成在半导体衬底上的单位像素。 每个单位像素包括光电转换器，浮动扩散，钉扎层和像素晶体管。 像素晶体管包括形成在半导体衬底上的栅电极，源极扩散层和漏极扩散层。 源极扩散层或漏极扩散层中的至少一个起到浮动扩散的作用。 钉扎层被像素晶体管的通道的底部和侧面处的浮动扩散覆盖。 浮动扩散的导电类型与钉扎层的导电类型相反。

公开(公告)号：US20200321385A1

公开(公告)日：2020-10-08

申请号：US16909070

申请日：2020-06-23

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Junji HIRASE ,  Yoshinori TAKAMI ,  Shota YAMADA ,  Yoshihiro SATO ,  Yoshiaki SATOU

IPC: H01L27/146 ,  H01L27/148

Abstract: An imaging device including a semiconductor substrate having a first surface, the semiconductor substrate including: a first layer containing an impurity of a first conductivity type; a second layer containing an impurity of a second conductivity type different from the first conductivity type, the second layer being closer to the first surface than the first layer is; and a pixel. The pixel includes a photoelectric converter configured to convert light into charge; and a first diffusion region containing an impurity of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge. The first layer having a second surface adjacent to the second layer, the second surface including a convex portion toward the first surface, and the convex portion facing the first diffusion region.

公开(公告)号：US20240347562A1

公开(公告)日：2024-10-17

申请号：US18750838

申请日：2024-06-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro SATO ,  Yoshinori TAKAMI ,  Ryota SAKAIDA

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14643

Abstract: An imaging device includes: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first contact that is directly connected to the first diffusion region; a second contact that is directly connected to the second diffusion region; a first transistor that includes the first diffusion region as one of a source and a drain and that includes a first gate; and a second transistor that includes the second diffusion region as one of a source and a drain and that includes a second gate. A dimension of the second contact in a direction parallel to a width direction of the second gate is greater than a dimension of the first contact in a direction parallel to a width direction of the first gate.

公开(公告)号：US20220208816A1

公开(公告)日：2022-06-30

申请号：US17695422

申请日：2022-03-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Junji HIRASE ,  Masaaki YANAGIDA ,  Kazuko NISHIMURA ,  Yoshinori TAKAMI

IPC: H01L27/146

Abstract: An imaging apparatus comprises a semiconductor substrate, a photoelectric converter, a charge storage region, and an amplification transistor. The photoelectric converter includes a pixel electrode, a counter electrode, and a photoelectric conversion layer. The photoelectric conversion layer is positioned above the semiconductor substrate and is disposed between the pixel electrode and the counter electrode. Charge generated by the photoelectric converter is stored in the charge storage region. The amplification transistor includes a source, a drain, and a gate electrode. The gate electrode is electrically connected to the charge storage region. In a plan view, the width of the drain of the amplification transistor is less than the width of the source of the amplification transistor.

公开(公告)号：US20190273880A1

公开(公告)日：2019-09-05

申请号：US16410893

申请日：2019-05-13

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Junji HIRASE ,  Yoshihiro SATO ,  Yoshinori TAKAMI ,  Masayuki TAKASE ,  Masashi MURAKAMI

IPC: H04N5/361 ,  H04N5/363 ,  H04N5/359 ,  H04N5/3745 ,  H04N5/369 ,  H01L27/146

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

公开(公告)号：US20230317746A1

公开(公告)日：2023-10-05

申请号：US18330197

申请日：2023-06-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro SATO ,  Yoshinori TAKAMI ,  Ryota SAKAIDA

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14607 ,  H01L27/14643

Abstract: An imaging device including: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first plug that has a first surface directly connected to the first diffusion region; and a second plug that has a second surface directly connected to the second diffusion region, where an area of the second surface of the second plug is larger than an area of the first surface of the first plug in a plan view.

公开(公告)号：US20220059584A1

公开(公告)日：2022-02-24

申请号：US17518058

申请日：2021-11-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Junji HIRASE ,  Yoshinori TAKAMI ,  Yoshihiro SATO

IPC: H01L27/146 ,  H04N5/369 ,  H01L27/30

Abstract: An imaging device, including a photoelectric converter that generates a signal charge by photoelectric conversion of light; and a semiconductor substrate. The semiconductor substrate includes: a charge accumulation region that is an impurity region of a first conductivity type, and configured to accumulate the signal charge; a first impurity region of the first conductivity type, the first impurity region being one of a source or a drain of a first transistor and adjacent to the charge accumulation region; and a blocking structure located between the charge accumulation region and the first impurity region. The blocking structure includes a second impurity region of a second conductivity type different from the first conductivity type, a part of the second impurity region located on a surface of the semiconductor substrate, and the second impurity region is not in contact with the first impurity region on the surface of the semiconductor substrate.