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公开(公告)号：US20250089436A1
公开(公告)日：2025-03-13
申请号：US18957246
申请日：2024-11-22
Inventor： Yoshihiro SATO , Satoshi SHIBATA , Ryota SAKAIDA
Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.
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公开(公告)号：US20240387570A1
公开(公告)日：2024-11-21
申请号：US18787407
申请日：2024-07-29
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H10K30/00
Abstract: A camera system including a lens; and an imaging device that receives a light through the lens. The imaging device includes: a semiconductor substrate; a photoelectric converter that is configured to convert the light into a signal charge and that is stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first state and a second state, a sensitivity in the first state being different from a sensitivity in the second state, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.
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公开(公告)号：US20230317746A1
公开(公告)日：2023-10-05
申请号：US18330197
申请日：2023-06-06
Inventor： Yoshihiro SATO , Yoshinori TAKAMI , Ryota SAKAIDA
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/1463 , H01L27/14607 , H01L27/14643
Abstract: An imaging device including: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first plug that has a first surface directly connected to the first diffusion region; and a second plug that has a second surface directly connected to the second diffusion region, where an area of the second surface of the second plug is larger than an area of the first surface of the first plug in a plan view.
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公开(公告)号：US20220094868A1
公开(公告)日：2022-03-24
申请号：US17539938
申请日：2021-12-01
Inventor： Yoshihiro SATO , Junji HIRASE
IPC: H04N5/363 , H04N5/378 , H04N5/361 , H04N5/374 , H01L27/146
Abstract: An imaging device including: a semiconductor substrate; pixels arranged in a first direction; and a signal line that extends in the first direction. Each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a region into which the signal charge is input, a first transistor that outputs a signal to the signal line according to an amount of the signal charge input into the region, and a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and a first insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. Further, the signal line is located closer to the semiconductor substrate than the first capacitive element is.
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公开(公告)号：US20220059584A1
公开(公告)日：2022-02-24
申请号：US17518058
申请日：2021-11-03
Inventor： Junji HIRASE , Yoshinori TAKAMI , Yoshihiro SATO
IPC: H01L27/146 , H04N5/369 , H01L27/30
Abstract: An imaging device, including a photoelectric converter that generates a signal charge by photoelectric conversion of light; and a semiconductor substrate. The semiconductor substrate includes: a charge accumulation region that is an impurity region of a first conductivity type, and configured to accumulate the signal charge; a first impurity region of the first conductivity type, the first impurity region being one of a source or a drain of a first transistor and adjacent to the charge accumulation region; and a blocking structure located between the charge accumulation region and the first impurity region. The blocking structure includes a second impurity region of a second conductivity type different from the first conductivity type, a part of the second impurity region located on a surface of the semiconductor substrate, and the second impurity region is not in contact with the first impurity region on the surface of the semiconductor substrate.
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Patent Agency Ranking
公开(公告)号：US20200243587A1
公开(公告)日：2020-07-30
申请号：US16846851
申请日：2020-04-13
Inventor： Yoshihiro SATO
IPC: H01L27/146 , H04N5/363 , H04N5/3745
Abstract: An imaging device including a semiconductor substrate; pixels arranged on the semiconductor substrate in a first direction; and a signal line extending in the first direction. Each of the pixels includes a photoelectric converter generating signal charge by photoelectric conversion, a charge accumulation region that accumulates the signal charge output from the photoelectric converter, a first transistor that outputs a signal to the signal line according to an amount of the signal charge accumulated in the charge accumulation region, a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. The first capacitive element is closer to the semiconductor substrate than the signal line.
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公开(公告)号：US20180190706A1
公开(公告)日：2018-07-05
申请号：US15909413
申请日：2018-03-01
Inventor： Mitsuyoshi MORI , Ryohei MIYAGAWA , Yoshiyuki OHMORI , Yoshihiro SATO , Yutaka HIROSE , Yusuke SAKATA , Toru OKINO
IPC: H01L27/146 , H01L27/30
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/307
Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.
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公开(公告)号：US20180166479A1
公开(公告)日：2018-06-14
申请号：US15878902
申请日：2018-01-24
Inventor： Masashi MURAKAMI , Kazuko NISHIMURA , Yutaka ABE , Yoshiyuki MATSUNAGA , Yoshihiro SATO , Junji HIRASE
IPC: H01L27/146 , H01L51/42
CPC classification number: H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/14665 , H01L51/42
Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.
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公开(公告)号：US20210193714A1
公开(公告)日：2021-06-24
申请号：US17191437
申请日：2021-03-03
Inventor： Yoshihiro SATO , Yoshinori TAKAMI , Ryota SAKAIDA
IPC: H01L27/146
Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.
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10.发明申请公开(公告)号：US20190166319A1
公开(公告)日：2019-05-30
申请号：US16243921
申请日：2019-01-09
Inventor： Yoshihiro SATO , Junji HIRASE
IPC: H04N5/363 , H04N5/374 , H04N5/361 , H01L27/146 , H04N5/378
Abstract: An imaging device includes first and second pixels, arranged in a first direction, each of which includes: a photoelectric converter converting incident light into signal charge; an impurity region, in a semiconductor substrate, coupled to the photoelectric converter; a first transistor having a first gate coupled to the impurity region, and first source and drain; and a second transistor having second gate, source and drain. One of the second source and the second drain is the impurity region, and another is coupled to the first source or the first drain. The imaging device further includes a signal line, coupled to the first source or the first drain, and extends along the first direction and overlaps with both of the first and second pixels. The signal line is located on an opposite side from the impurity region across a center line of the first pixel.
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