公开(公告)号：US20160307967A1

公开(公告)日：2016-10-20

申请号：US15195861

申请日：2016-06-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshiya MORIYAMA ,  Hiromasa FUJIMOTO ,  Kosaku SAEKI ,  Nobuyoshi TAKAHASHI

IPC: H01L27/30 ,  H01L29/423 ,  H01L27/146

CPC classification number: H01L27/307 ,  H01L21/265 ,  H01L21/324 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/0847 ,  H01L29/42376

Abstract: A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.

公开(公告)号：US20230352501A1

公开(公告)日：2023-11-02

申请号：US18342423

申请日：2023-06-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kosaku SAEKI

IPC: H01L27/146 ,  H04N25/76

CPC classification number: H01L27/14612 ,  H01L27/1461 ,  H04N25/76 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/14643 ,  H04N25/75

Abstract: An imaging apparatus including a semiconductor substrate which includes a charge accumulation portion containing an impurity of a first conductivity type; a contact plug which is connected to the charge accumulation portion, contains an impurity of the first conductivity type, and is not silicide; a first insulating film which includes an upper wall located above the contact plug; and a second insulating film which includes a portion located above the upper wall. A material of the second insulating film is different from a material of the first insulating film.

公开(公告)号：US20150076500A1

公开(公告)日：2015-03-19

申请号：US14553559

申请日：2014-11-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ryota SAKAIDA ,  Nobuyoshi TAKAHASHI ,  Kosaku SAEKI

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L21/28525 ,  H01L21/76889 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L27/14612 ,  H01L27/14643 ,  H01L51/441 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Each imaging pixel provided in a solid-state imaging device includes a charge accumulation part which is a diffusion region formed in a substrate, a gate electrode formed lateral to the charge accumulation part on the substrate, an insulating film formed on the charge accumulation part, and a contact plug connected to the charge accumulation part so as to penetrate the insulating film and made of semiconductor. The contact plug is, at a lower part thereof, embedded in the insulating film, and is, at an upper part thereof, exposed through the insulating film. Silicide is formed on the upper part of the contact plug, and the charge accumulation part and the gate electrode are covered by the insulating film.

Abstract translation: 提供在固态成像装置中的每个成像像素包括电荷累积部分，其是形成在衬底中的扩散区域，形成在衬底上的电荷累积部分侧面的栅电极，形成在电荷累积部分上的绝缘膜， 以及连接到电荷累积部分以便穿透绝缘膜并由半导体制成的接触插塞。 接触插塞在其下部嵌入绝缘膜，并且在其上部通过绝缘膜露出。 硅化物形成在接触插塞的上部，电荷累积部分和栅电极被绝缘膜覆盖。

公开(公告)号：US20150084106A1

公开(公告)日：2015-03-26

申请号：US14555153

申请日：2014-11-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro NAKANISHI ,  Junji HIRASE ,  Kosaku SAEKI ,  Yoshinori TAKAMI ,  Takeshi HIDAKA ,  Tokuhiko TAMAKI

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14689

Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.

Abstract translation: 固态成像装置包括形成在半导体衬底上的单位像素。 每个单位像素包括光电转换器，浮动扩散，钉扎层和像素晶体管。 像素晶体管包括形成在半导体衬底上的栅电极，源极扩散层和漏极扩散层。 源极扩散层或漏极扩散层中的至少一个起到浮动扩散的作用。 钉扎层被像素晶体管的通道的底部和侧面处的浮动扩散覆盖。 浮动扩散的导电类型与钉扎层的导电类型相反。

公开(公告)号：US20150076484A1

公开(公告)日：2015-03-19

申请号：US14554027

申请日：2014-11-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshiya MORIYAMA ,  Hiromasa FUJIMOTO ,  Kosaku SAEKI ,  Nobuyoshi TAKAHASHI

IPC: H01L27/30 ,  H01L21/324 ,  H01L29/423 ,  H01L21/265 ,  H01L27/146 ,  H01L29/08

CPC classification number: H01L27/307 ,  H01L21/265 ,  H01L21/324 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14665 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/0847 ,  H01L29/42376

Abstract: A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.

Abstract translation: 固体摄像器件包括：半导体衬底; 形成在所述半导体基板上的像素单元; 以及在所述像素单元的周围形成在所述半导体基板上的外围电路单元，所述像素单元包括：将入射光转换为电荷的光电转换膜; 以及保持电荷的浮动扩散，外围电路单元包括具有栅极和两个源极和漏极扩散区的晶体管，并且两个源极和漏极扩散区具有比浮动扩散的杂质浓度更高的杂质浓度。