公开(公告)号：US20220013550A1

公开(公告)日：2022-01-13

申请号：US17485057

申请日：2021-09-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuki SUGIURA ,  Akito INOUE

IPC: H01L27/146

Abstract: A photodetector includes: a pixel array in which a plurality of pixels are arranged in an array. Each of the plurality of pixels includes: a first semiconductor layer and a second semiconductor layer which are a first conductivity type, the second semiconductor layer located above the first semiconductor layer and having an impurity concentration lower than the impurity concentration of the first semiconductor layer; and a first semiconductor region, of a second conductivity type different from the first conductivity type, which is disposed in the second semiconductor layer and joined to the first semiconductor layer. The first semiconductor layer and the first semiconductor region constitute a multiplication region in which a charge is multiplied by avalanche multiplication. The pixel array includes a first separator of the first conductivity type disposed in the second semiconductor layer and a second separator of the first conductivity type disposed in the first semiconductor layer.

公开(公告)号：US20230316765A1

公开(公告)日：2023-10-05

申请号：US18331532

申请日：2023-06-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Manabu USUDA ,  Shinzo KOYAMA ,  Yuki SUGIURA

IPC: G06V20/52 ,  G06T7/11 ,  G06T7/50 ,  G06T7/70 ,  G06V10/74 ,  G08B21/00

CPC classification number: G06V20/52 ,  G06T7/11 ,  G06T7/50 ,  G06T7/70 ,  G06V10/761 ,  G08B21/00 ,  G06T2207/10028

Abstract: It is made possible to monitor the periphery of a target object more accurately, using an imaging device that generates distance image data by sub-range analysis. For a target object present across first and second distance zones adjacent to each other, a first position at a near end position of the first distance zone, a second position at a boundary position between the first and second distance zones, and a third position indicating the position at a far end position of the second distance zone are obtained. Location data of the target object is generated based on location information of the second position with respect to a straight line connecting the first position and third position.

公开(公告)号：US20220246782A1

公开(公告)日：2022-08-04

申请号：US17721854

申请日：2022-04-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akito INOUE ,  Yuki SUGIURA

IPC: H01L31/107 ,  H01L31/02 ,  H01L27/146 ,  H01L27/144

Abstract: A photosensor includes a plurality of avalanche photodiodes (APD) provided on a first main surface, a first isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a first direction, and a second isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a second direction different from a direction of the first isolation region. The first isolation region and the second isolation region are depleted. At least one of the first isolation region or the second isolation region is terminated at a first connection portion at which the first isolation region and the second isolation region are connected.

公开(公告)号：US20240121530A1

公开(公告)日：2024-04-11

申请号：US18541932

申请日：2023-12-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tatsuya KABE ,  Hideyuki ARAI ,  Hisashi AIKAWA ,  Yuki SUGIURA ,  Akito INOUE ,  Mitsuyoshi MORI ,  Kentaro NAKANISHI ,  Yusuke SAKATA

IPC: H04N25/75 ,  H01L27/146 ,  H04N25/766

CPC classification number: H04N25/75 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N25/766

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.

公开(公告)号：US20240004037A1

公开(公告)日：2024-01-04

申请号：US18466458

申请日：2023-09-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuki SUGIURA ,  Akito INOUE ,  Shigeru SAITOU ,  Shinzo KOYAMA

IPC: G01S7/481 ,  G01S7/484 ,  G01S17/10

CPC classification number: G01S7/4816 ,  G01S7/484 ,  G01S17/10

Abstract: A distance measuring device includes: a light emitting unit; a pixel array including a plurality of pixels arranged in a matrix; and a control unit calculating the distance to a measuring target. Each of the plurality of pixels includes: an avalanche photodiode; a primary accumulation region for temporarily holding a signal charge; and a plurality of memory elements provided in parallel with respect to the primary accumulation region. The control unit performs a plurality of times of light exposure at timings corresponding to different distance sections within one pulse period of outgoing light from the light emitting unit, allows signal charges generated after the respective times of light exposure to be accumulated in the different memory elements, and reads out the signal charges to calculate the distance to the measuring target.

公开(公告)号：US20220271067A1

公开(公告)日：2022-08-25

申请号：US17733610

申请日：2022-04-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yuki SUGIURA ,  Akito INOUE

IPC: H01L27/146

Abstract: A solid-state image sensor includes at least two or more APDs formed on a substrate. First regions are arranged outside the APDs as viewed in plane. Adjacent ones of the APDs and the first regions are separated from each other through a separation region. A first voltage V21 is applied to a fourth semiconductor layer of the APD, and a second voltage V22 is applied to a fifth semiconductor layer of the first region. The first voltage V21 is higher than the second voltage V22.

公开(公告)号：US20220014701A1

公开(公告)日：2022-01-13

申请号：US17486495

申请日：2021-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tatsuya KABE ,  Hideyuki ARAI ,  Hisashi AIKAWA ,  Yuki SUGIURA ,  Akito INOUE ,  Mitsuyoshi MORI ,  Kentaro NAKANISHI ,  Yusuke SAKATA

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/374

Abstract: A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

公开(公告)号：US20220005848A1

公开(公告)日：2022-01-06

申请号：US17479835

申请日：2021-09-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akito INOUE ,  Yuki SUGIURA ,  Yutaka HIROSE

IPC: H01L27/146

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

公开(公告)号：US20210028202A1

公开(公告)日：2021-01-28

申请号：US17039128

申请日：2020-09-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akito INOUE ,  Yuki SUGIURA ,  Yutaka HIROSE

IPC: H01L27/146

Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.