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    SOLID-STATE IMAGING DEVICE
    3.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20150109503A1

    公开(公告)日：2015-04-23

    申请号：US14579592

    申请日：2014-12-22

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Mitsuyoshi MORI ,  Hirohisa OHTSUKI ,  Yoshiyuki OHMORI ,  Yoshihiro SATO ,  Ryohei MIYAGAWA

    IPC: H04N5/378

    CPC classification number: H04N5/378 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/3745

    Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.

    Abstract translation: 根据本公开的固态成像装置包括二维布置的像素，每个像素包括：金属电极; 在所述金属电极上并将光转换为电信号的光电转换层; 光电转换层上的透明电极; 电荷蓄积区域，其电连接到所述金属电极并积聚来自所述光电转换层的电荷; 放大器晶体管，其根据电荷积累区域中的电荷量施加信号电压; 以及复位晶体管，其复位电荷累积区域的电位，其中复位晶体管包括比放大器晶体管的栅极氧化物膜厚的栅极氧化膜。

    SOLID-STATE IMAGING DEVICE
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20150137199A1

    公开(公告)日：2015-05-21

    申请号：US14572046

    申请日：2014-12-16

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Mitsuyoshi MORI ,  Ryohei MIYAGAWA ,  Yoshiyuki OHMORI ,  Yoshihiro SATO ,  Yutaka HIROSE ,  Yusuke SAKATA ,  Toru OKINO

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/307

    Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

    Abstract translation: 根据本公开的固态成像装置包括：电荷存储区域，其在光电转换膜中存储通过光电转换获得的信号电荷; 放大晶体管，其放大存储在相应像素中的电荷存储区域中的信号电荷; 接触插塞，其电连接到电荷存储区域并且包含半导体材料; 以及设置在接触塞上方并包含半导体材料的线。 接触插塞和电荷存储区域电连接，并且放大晶体管的接触插塞和栅电极经由线电连接。

    SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE DEVICE
    7.
    发明申请
    SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE DEVICE 有权
    固态成像装置及其制造方法

    公开(公告)号：US20150123180A1

    公开(公告)日：2015-05-07

    申请号：US14556093

    申请日：2014-11-28

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Yoshihiro SATO ,  Ryohei MIYAGAWA ,  Tokuhiko TAMAKI ,  Junji HIRASE ,  Yoshiyuki OHMORI ,  Yoshiyuki MATSUNAGA

    IPC: H01L27/146 ,  H01L21/266 ,  H01L21/8234

    CPC classification number: H01L27/14643 ,  H01L21/266 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14665 ,  H01L27/14689 ,  H04N5/363 ,  H04N5/378

    Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

    Abstract translation: 每个单位像素包括光电转换器，与半导体区域一起形成累积二极管的n型杂质区域，累积二极管累积由光电转换器产生的信号电荷;放大器晶体管，包括电连接到杂质区的栅电极 以及形成在放大晶体管周围并注入p型杂质的隔离区域。 放大器晶体管包括形成在栅极电极和隔离区域之间的n型源极/漏极区域和形成在栅电极下方的沟道区域。 在包括沟道区域的部分中，隔离区域中的间隙在栅极宽度方向上比在包括源极/漏极区域的部分处更宽。

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