DISTANCE MEASUREMENT DEVICE AND IMAGE GENERATION METHOD

    公开(公告)号:US20220011436A1

    公开(公告)日:2022-01-13

    申请号:US17482365

    申请日:2021-09-22

    Abstract: A distance measurement device includes: an image capturer that captures N segmental images corresponding to N segmental distances into which a distance measurement range is divided; and a range image generator that generates a range image from the N segmental images. The range image generator determines: among segmental pixels included in the N segmental images, a segmental pixel having a maximum signal value from N segmental pixels at the same pixel position among pixel positions; a value indicating a segmental distance of the segmental pixel having the maximum signal value to be a distance value of the pixel position of the range image, when the maximum signal value is greater than or equal to a threshold; and a value indicating a value outside the distance measurement range to be the distance value of the pixel position of the range image, when the maximum signal value is less than the threshold.

    SOLID-STATE IMAGING APPARATUS AND METHOD OF DRIVING THE SAME

    公开(公告)号:US20190075265A1

    公开(公告)日:2019-03-07

    申请号:US16178396

    申请日:2018-11-01

    Abstract: An imaging device includes a photoelectric converter generating signal charge; a charge storage region storing the signal charge; a first transistor having a gate coupled to the charge storage region; a second transistor having a source and a drain; and voltage supply circuity supplying voltages varying with time. An output of the first transistor is fed back to the second transistor and is supplied to the charge storage region. A reset operation for discharging the signal charge in the charge storage region includes a first reset operation and a second reset operation. In the first reset operation, the second transistor changes from an OFF state to an ON state and then changes to an OFF state. In the second reset operation, the voltage supply circuity supplies the voltages to a gate of the second transistor so that the second transistor gradually changes from an OFF state to an ON state.

    SOLID-STATE IMAGING DEVICE
    3.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号:US20150195472A1

    公开(公告)日:2015-07-09

    申请号:US14666730

    申请日:2015-03-24

    Inventor: Motonori ISHII

    Abstract: A solid-state imaging device according to the present disclosure includes a pixel unit in which a plurality of pixels are disposed in a matrix. Each pixel includes a photoelectric conversion unit, an FD portion, an amplification transistor, a reset transistor, and a selection transistor. For each column, the pixel unit includes a power source line that is connected to a drain of the amplification transistor, a column signal line that is connected to a source of the selection transistor, a first feedback line that is connected to a drain of the reset transistor, a negative feedback circuit, and a positive feedback circuit. The negative feedback circuit negatively feeds a signal outputted to the column signal line back to the first feedback line, and the positive feedback circuit positively feeds the signal outputted to the column signal line back to the power source line.

    Abstract translation: 根据本公开的固态成像装置包括其中多个像素被布置成矩阵的像素单元。 每个像素包括光电转换单元,FD部分,放大晶体管,复位晶体管和选择晶体管。 对于每列,像素单元包括连接到放大晶体管的漏极的电源线,连接到选择晶体管的源极的列信号线,连接到选择晶体管的漏极的第一反馈线 复位晶体管,负反馈电路和正反馈电路。 负反馈电路将输出到列信号线的信号反馈给第一反馈线,正反馈电路将输出到列信号线的信号正向馈送回电源线。

    SOLID-STATE IMAGING SENSOR
    4.
    发明公开

    公开(公告)号:US20230388676A1

    公开(公告)日:2023-11-30

    申请号:US18448673

    申请日:2023-08-11

    CPC classification number: H04N25/771 H04N25/587

    Abstract: A solid state image sensor includes at least a plurality of pixel cells and a vertical scanning circuit. Each of the pixel cells includes an avalanche photodiode, a floating diffusion portion, a transfer transistor, a reset transistor, an amplifier transistor, a selection transistor, a count transistor, and a capacitor. The amplifier transistor outputs a voltage signal responsive to the amount of charge stored in the floating diffusion portion. The capacitor has terminals one of which is connected to the count transistor. The vertical scanning circuit is configured to be able to supply different levels of voltages to the other terminals of the capacitors.

    SOLID-STATE IMAGING DEVICE
    8.
    发明申请

    公开(公告)号:US20220006941A1

    公开(公告)日:2022-01-06

    申请号:US17482253

    申请日:2021-09-22

    Abstract: An AND gate 201 outputs an output signal A so that first pixels be exposed simultaneously in a light emission period included in a scan period, and an AND gate 205 outputs an output signal E so that pixel signals be read from the first pixels in a readout period after the light emission period. Also, an AND gate 206 outputs an output signal F so that pixel signals be read from second pixels in a period including the light emission period in the scan period.

    IMAGE RECOGNITION DEVICE
    9.
    发明申请

    公开(公告)号:US20200097702A1

    公开(公告)日:2020-03-26

    申请号:US16494742

    申请日:2018-03-12

    Abstract: An image recognition device includes: a luminance image generator and a distance image generator that generate a luminance image and a distance image, respectively, based on an image signal of an imaging target object output from a photoreceptor element; a target object recognition processor that extracts a target-object candidate from the luminance image using a machine learning database; and a three-dimensional object determination processor that uses the distance image to determine whether the extracted target-object candidate is a three-dimensional object. If it is determined that the target-object candidate is not a three-dimensional object, the target-object candidate extracted from the luminance image is prevented from being used, in the machine learning database, as image data for extracting a feature value of a target object.

    SOLID-STATE IMAGING DEVICE
    10.
    发明申请

    公开(公告)号:US20190013340A1

    公开(公告)日:2019-01-10

    申请号:US16130664

    申请日:2018-09-13

    Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage;and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

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