公开(公告)号：US20180151719A1

公开(公告)日：2018-05-31

申请号：US15812430

申请日：2017-11-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TSUNEICHIRO SANO ,  ATSUSHI OHOKA ,  TSUTOMU KIYOSAWA ,  OSAMU ISHIYAMA ,  TAKAYUKI WAKAYAMA ,  KOUICHI SAITOU ,  TAKASHI HASEGAWA ,  DAISUKE SHINDO ,  OSAMU KUSUMOTO

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/10 ,  H01L29/423 ,  H01L23/31 ,  H01L29/06

CPC classification number: H01L29/7811 ,  H01L23/3192 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42356

Abstract: A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure. The termination structure includes the silicon carbide semiconductor layer, a second conductivity type second body region surrounding the active region, one or more second conductivity type rings surrounding the second body region, one or more outer-circumferential upper source electrodes surrounding the active region, and an upper gate electrode. The silicon carbide semiconductor device further includes a first protective film and a second protective film. The first protective film covers the inner-circumferential upper source electrode, the upper gate electrode, and an inner side surface of the one or more outer-circumferential upper source electrodes except for a pad region. The second protective film covers the first protective film and at least a part of the one or more second conductivity type rings.