-
公开(公告)号：US10960496B2
公开(公告)日：2021-03-30
申请号：US15582507
申请日：2017-04-28
Inventor： Shinnosuke Akiyama , Kiyohiro Hine , Hidetoshi Kitaura , Akio Furusawa
Abstract: There is provided a solder alloy in which 0.5 mass % or more and 1.25 mass % or less of Sb, In satisfying the following formula (I) or (II) when [Sb] is set as a Sb content percentage (mass %) and [In] is set as an In content percentage (mass %): in a case of 0.5≤[Sb]≤1.0, 5.5≤[In]≤5.50+1.06[Sb] . . . (I), in a case of 1.0
-
公开(公告)号：US08957521B2
公开(公告)日：2015-02-17
申请号：US14114337
申请日：2012-12-26
Inventor： Taichi Nakamura , Hidetoshi Kitaura
IPC: H01L23/12 , H01L23/52 , H01L29/40 , H01L23/00 , B23K35/02 , B23K35/22 , H01L23/488 , H01L23/492 , B23K35/26 , B23K35/30 , H01L23/495
CPC classification number: H01L24/05 , B23K35/0261 , B23K35/0272 , B23K35/22 , B23K35/264 , B23K35/302 , H01L23/488 , H01L23/492 , H01L23/49513 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/04042 , H01L2224/05611 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/2712 , H01L2224/27334 , H01L2224/29083 , H01L2224/29111 , H01L2224/29139 , H01L2224/29147 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83065 , H01L2224/83101 , H01L2224/83192 , H01L2224/83201 , H01L2224/83411 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8381 , H01L2224/83986 , H01L2924/00014 , H01L2924/01322 , H01L2924/01327 , H01L2924/12042 , H01L2924/203 , H01L2924/3025 , H01L2924/351 , H01L2924/3512 , H01L2924/35121 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2924/01083 , H01L2224/8321 , H01L2924/0002
Abstract: A mounted structure includes an electrode of a substrate, an electrode of a semiconductor element, and a mounted layers for bonding the electrode of the substrate and the electrode of the semiconductor element, and the mounted layers includes: a first intermetallic compound layer containing a CuSn-based intermetallic compound; a Bi layer; a second intermetallic compound layer containing a CuSn-based intermetallic compound; a Cu layer; and a third intermetallic compound layer containing a CuSn-based intermetallic compound, and the above layers are sequentially arranged from the electrode of the substrate toward the electrode of the semiconductor element to configure the mounted layers.
Abstract translation: 安装结构包括基板的电极，半导体元件的电极和用于接合基板的电极和半导体元件的电极的安装层，并且安装的层包括：含有CuSn的第一金属间化合物层 基金属间化合物; 铋层; 包含CuSn基金属间化合物的第二金属间化合物层; 铜层; 以及含有CuSn基金属间化合物的第三金属间化合物层，并且从基板的电极向半导体元件的电极依次配置上述层，以配置安装层。
-
公开(公告)号：US11476399B2
公开(公告)日：2022-10-18
申请号：US16196785
申请日：2018-11-20
Inventor： Hidetoshi Kitaura , Akio Furusawa , Kiyohiro Hine
Abstract: A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.
-
公开(公告)号：US11135683B2
公开(公告)日：2021-10-05
申请号：US16137108
申请日：2018-09-20
Inventor： Hidetoshi Kitaura , Akio Furusawa , Kiyohiro Hine
IPC: B23K35/26 , B23K1/00 , B23K31/02 , H01L35/08 , C22C13/02 , H01L23/00 , B23K101/40 , B23K101/42
Abstract: A solder alloy, includes: about 3 wt % to about 15 wt % of Sb; about 0.01 wt % to about 1.5 wt % of Te; and about 0.005 wt % to about 1 wt % of at least one element selected from the group consisting of Zn, Co, and Cr; and a balance of Sn.
-
公开(公告)号：US20150136881A1
公开(公告)日：2015-05-21
申请号：US14401533
申请日：2013-05-24
Inventor： Hidetoshi Kitaura , Naomi Nishiki , Kazuhiro Nishikawa , Kimiaki Nakaya , Atsushi Tanaka
CPC classification number: B03C1/30 , B02C19/06 , B02C23/00 , B02C23/08 , B03C2201/18 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/19 , C01B32/20 , C01B2204/02
Abstract: The invention uses a dispersion (303) of suspended single-layer graphene (201), multilayer graphene (202), and graphite (203), and applies a magnetic field to the dispersion (303) to separate the single-layer graphene (201) from the dispersion (303). In the magnetic field applying step of the graphene producing method, the single-layer graphene (201), the multilayer graphene (202), and the graphite (203) are situated at different locations in solvent by using the difference in the diamagnetism strengths of the single-layer graphene (201), the multilayer graphene (202), and the graphite (203).
Abstract translation: 本发明使用悬浮单层石墨烯（201），多层石墨烯（202）和石墨（203）的分散体（303），并向分散体（303）施加磁场以分离单层石墨烯（201） ）分散体（303）。 在石墨烯制造方法的磁场施加步骤中，通过使用单层石墨烯（201），多层石墨烯（202）和石墨（203）的不同位置处于溶剂中的不同位置， 单层石墨烯（201），多层石墨烯（202）和石墨（203）。
-
Patent Agency Ranking
公开(公告)号：US11515280B2
公开(公告)日：2022-11-29
申请号：US16790372
申请日：2020-02-13
Inventor： Kiyohiro Hine , Hidetoshi Kitaura , Akio Furusawa
Abstract: A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.
-
公开(公告)号：US09802206B2
公开(公告)日：2017-10-31
申请号：US14401533
申请日：2013-05-24
Inventor： Hidetoshi Kitaura , Naomi Nishiki , Kazuhiro Nishikawa , Kimiaki Nakaya , Atsushi Tanaka
CPC classification number: B03C1/30 , B02C19/06 , B02C23/00 , B02C23/08 , B03C2201/18 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/19 , C01B32/20 , C01B2204/02
Abstract: A dispersion of suspended single-layer graphene, multilayer graphene, and graphite is used. A magnetic field is applied to the dispersion to separate the single-layer graphene from the dispersion. By applying the magnetic field, the single-layer graphene, the multilayer graphene, and the graphite are situated at different locations in solvent by the difference in the diamagnetism strengths of the single-layer graphene, the multilayer graphene, and the graphite.
-
公开(公告)号：US09746259B2
公开(公告)日：2017-08-29
申请号：US14713306
申请日：2015-05-15
Inventor： Atsushi Tanaka , Naomi Nishiki , Kazuhiro Nishikawa , Shigeki Sakaguchi , Hidetoshi Kitaura , Kimiaki Nakaya
CPC classification number: F28F21/02 , B32B7/005 , B32B27/08 , B32B27/20 , B32B2250/02 , B32B2250/24 , B32B2262/106 , B32B2305/30 , F28F21/065 , H05K9/0083 , Y10T428/24058
Abstract: A heat conductor includes a first layer containing a first resin component and first flake graphite fillers each having a basal plane; and a second layer containing a second resin component and second flake graphite fillers each having a basal plane. The heat conductor is a laminate including the first layer and the second layer, an average of first angles in the first layer is 35 degrees or smaller, each of the first angles is an acute angle between the basal plane of a corresponding one of the first flake graphite fillers and a first laminated surface of the laminate, an average of second angles in the second layer ranges from 55 degrees to 90 degrees, and each of the second angles is an acute angle between the basal plane of a corresponding one of the second flake graphite fillers and a second laminated surface of the laminate.
-
公开(公告)号：US11040883B2
公开(公告)日：2021-06-22
申请号：US15485763
申请日：2017-04-12
Inventor： Hidetoshi Kitaura , Naomi Nishiki , Atsushi Tanaka , Kimiaki Nakaya
Abstract: Provided is a graphite plate, consisting essentially of: graphite; and pores, wherein said graphite plate has a porosity from 1% to 30%. Further provided is a method for producing a graphite plate, including: applying welding pressure to at least one glass-like carbon material in a state in which said at least one glass-like carbon material is maintained in an inert atmosphere under heating conditions, to produce a graphite plate having a porosity from 1% to 30%.
-
公开(公告)号：US10435607B2
公开(公告)日：2019-10-08
申请号：US15458947
申请日：2017-03-14
Inventor： Atsushi Tanaka , Naomi Nishiki , Hidetoshi Kitaura , Kimiaki Nakaya
IPC: C09K5/14 , C01B32/20 , C01B32/205 , B32B5/14
Abstract: A graphite material has a flexible part and can be utilized as a heat-conveying material in a narrow space. The graphite material, includes: at least one heat-conveying part; and a flexible part. A method for producing a graphite material, includes: (i) subjecting at least one film serving as a material to a heat treatment to obtain at least one carbonaceous film; (ii) providing a monolayer or multilayer structure including the at least one carbonaceous film; and (iii) applying heat and pressure to at least one part of the monolayer or multilayer structure in an inert atmosphere.
-
-
-
-
-
-
-
-
-
Search Results
14
records
(took 0.016 seconds)
