公开(公告)号：US20170136546A1

公开(公告)日：2017-05-18

申请号：US15251840

申请日：2016-08-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HISAO NAGAI ,  TAKESHI KOIWASAKI ,  DAISUKE SUETSUGU ,  TAKAFUMI OKUMA

IPC: B22F9/16 ,  C01B33/18 ,  B01J19/08 ,  C01B31/36 ,  C01F7/02 ,  C01B33/021 ,  C01B21/068

CPC classification number: B22F9/16 ,  B01J19/088 ,  B01J2219/0875 ,  B01J2219/0898 ,  B22F9/14 ,  B22F2201/013 ,  B22F2201/11 ,  B22F2201/20 ,  B22F2301/10 ,  B22F2301/15 ,  B22F2301/255 ,  B22F2304/05 ,  B22F2998/10 ,  B22F2999/00 ,  C01B21/068 ,  C01B32/956 ,  C01B33/021 ,  C01B33/181 ,  C01F7/02 ,  B22F3/003 ,  B22F2202/13

Abstract: To provide an apparatus and a method of producing fine particles capable of increasing evaporation efficiency of a material, increasing the production of fine particles and reducing costs by heating the inputted material by a gas heated by thermal plasma. A fine particle production apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles from a material feeding port into the vacuum chamber, electrodes arranged in the vacuum chamber for generating plasma and a collection device connected to the vacuum chamber and collecting fine particles, which produces the fine particles from the material by generating electric discharge inside the vacuum chamber, in which the collection device and the material feeding device are connected by piping, and a material heating and circulation device which heats the material by heat of a gas inside the chamber heated by the plasma through the piping is provided.

公开(公告)号：US20180174808A1

公开(公告)日：2018-06-21

申请号：US15834036

申请日：2017-12-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE SUETSUGU ,  MASAAKI TANABE ,  AKIRA OKUDA ,  YOSIMASA TAKII

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54 ,  C23C14/35 ,  C23C14/06 ,  H01J37/32 ,  C23C14/50

CPC classification number: H01J37/3476 ,  C23C14/0652 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/50 ,  C23C14/54 ,  H01J37/32715 ,  H01J37/3402 ,  H01J37/3467 ,  H01L21/0217 ,  H01L21/02266

Abstract: A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

公开(公告)号：US20220030707A1

公开(公告)日：2022-01-27

申请号：US17357159

申请日：2021-06-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： NORIMICHI NOGUCHI ,  MASATERU MIKAMI ,  KENJI TOYOSHIMA ,  HIROKI ODA ,  DAISUKE SUETSUGU ,  TATSUYA URAKAWA

IPC: H05K1/03 ,  H01C1/14 ,  H01C7/18 ,  H01C17/00 ,  H05K1/16 ,  B32B18/00 ,  C04B35/624 ,  C04B35/44

Abstract: A laminated ceramic sintered body board for an electronic device includes a ceramic sintered body board and a flattening film that is provided on an upper surface of the ceramic sintered body board and contains a thermally conductive filler, and the flattening film contains a thermally conductive filler.

公开(公告)号：US20220028586A1

公开(公告)日：2022-01-27

申请号：US17354895

申请日：2021-06-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASATERU MIKAMI ,  DAISUKE SUETSUGU ,  NORIMICHI NOGUCHI

IPC: H01C1/01 ,  H01C7/00

Abstract: The laminated alumina board for an electronic device includes an alumina board that is made of a sintered body of alumina particles and has an unevenness structure that is formed of the alumina particles on a surface and a flattening film that is provided on an upper surface of the alumina board and contains alumina as a main component.

公开(公告)号：US20220005680A1

公开(公告)日：2022-01-06

申请号：US17354920

申请日：2021-06-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE SUETSUGU ,  NORIMICHI NOGUCHI

IPC: H01J37/34 ,  C23C14/54 ,  C23C14/35

Abstract: A sputtering device includes: a vacuum chamber in which a target material and a substrate are disposable in a manner of facing each other; a DC power supply being electrically connectable to the target material; a gas supply source configured to introduce a film forming gas containing a nitrogen gas into the vacuum chamber; and a pulsing unit configured to pulse a current flowing from the DC power supply to the target material. The sputtering device forms a nitride thin film having a ternary or more composition containing nitrogen on the substrate by generating plasma in the vacuum chamber using a sintered alloy target material having a binary or more composition as the target material.

公开(公告)号：US20220003706A1

公开(公告)日：2022-01-06

申请号：US17354925

申请日：2021-06-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHINYA SUZUKI ,  KIYOKAZU ITOI ,  DAISUKE SUETSUGU ,  NORIMICHI NOGUCHI ,  NOBUTOSHI TAKAGI

IPC: G01N27/12 ,  G01N33/00

Abstract: A gas sensor device includes: a first electrode; a second electrode; a metal oxide layer that is disposed between the first electrode and the second electrode and is in contact with the first electrode and the second electrode; an interlayer insulating film that covers a part of the first electrode, a part of the second electrode, and a part of the metal oxide layer; and a hydrogen permeable film that allows only hydrogen to permeate, a local region that is in contact with the second electrode is provided inside the metal oxide layer, the local region having a higher oxygen deficiency than an oxygen deficiency of the other region in the metal oxide layer, an opening that exposes a gas contact portion which is a part of a main surface of the second electrode is provided in the interlayer insulating film, and the hydrogen permeable film is provided to cover at least the gas contact portion.

公开(公告)号：US20200255977A1

公开(公告)日：2020-08-13

申请号：US16637553

申请日：2018-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAHIDE HIRASAKI ,  DAISUKE SUETSUGU ,  TAKAFUMI OKUMA

IPC: C30B29/38 ,  C30B29/42 ,  C30B29/44 ,  C30B29/20 ,  C30B29/36 ,  C30B29/22 ,  C30B25/18 ,  C30B25/06 ,  C23C14/34 ,  C23C14/06

Abstract: A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.

公开(公告)号：US20190169738A1

公开(公告)日：2019-06-06

申请号：US16205166

申请日：2018-11-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAFUMI OKUMA ,  DAISUKE SUETSUGU ,  TAKAHIDE HIRASAKI

IPC: C23C14/34 ,  H01L21/02 ,  C23C14/06 ,  C23C14/00

Abstract: To provide a sputtering method as a reactive sputtering method of forming a thin film by allowing a target material to react with a gas, in which film deposition conditions are narrowed down from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.