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公开(公告)号:US20180174808A1
公开(公告)日:2018-06-21
申请号:US15834036
申请日:2017-12-06
Inventor: DAISUKE SUETSUGU , MASAAKI TANABE , AKIRA OKUDA , YOSIMASA TAKII
CPC classification number: H01J37/3476 , C23C14/0652 , C23C14/3485 , C23C14/35 , C23C14/50 , C23C14/54 , H01J37/32715 , H01J37/3402 , H01J37/3467 , H01L21/0217 , H01L21/02266
Abstract: A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.