公开(公告)号：US10312339B2

公开(公告)日：2019-06-04

申请号：US15728141

申请日：2017-10-09

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

公开(公告)号：US10083870B2

公开(公告)日：2018-09-25

申请号：US15925050

申请日：2018-03-19

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Takahiro Ohori ,  Ayanori Ikoshi ,  Hiroto Yamagiwa ,  Manabu Yanagihara

IPC: H01L29/00 ,  H01L21/8232 ,  H01L27/06 ,  H01L27/095 ,  H01L27/098 ,  H01L29/872 ,  H01L29/808 ,  H01L29/812 ,  H01L29/868 ,  H01L29/778 ,  H01L29/747 ,  H01L29/861

CPC classification number: H01L21/8232 ,  H01L21/8252 ,  H01L27/0266 ,  H01L27/06 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/085 ,  H01L27/095 ,  H01L27/098 ,  H01L28/20 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/747 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872

Abstract: A semiconductor device includes: a first bidirectional switch element including a first gate electrode, a second gate electrode, a first electrode, and a second electrode; a first field-effect transistor including a third gate electrode, a third electrode, and a fourth electrode; and a second field-effect transistor including a fourth gate electrode, a fifth electrode, and a sixth electrode. The first electrode is electrically connected to the third gate electrode, the first gate electrode is electrically connected to the third electrode, the second electrode is electrically connected to the fourth gate electrode, the second gate electrode is electrically connected to the fifth electrode, and the fourth electrode is electrically connected to the sixth electrode.

公开(公告)号：US10090220B2

公开(公告)日：2018-10-02

申请号：US15427629

申请日：2017-02-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ayanori Ikoshi ,  Masahiro Hikita ,  Keiichi Matsunaga ,  Takahiro Sato ,  Manabu Yanagihara

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417

Abstract: A semiconductor device includes a substrate; a semiconductor layer; a first protective film; a first adhesive layer disposed on the first protective film; an electrode pad disposed on the first protective film; a second protective film disposed to cover and be in contact with the electrode pad and the first adhesive layer; and a first opening formed in part of the second protective film such that the upper surface of the electrode pad is exposed, wherein in a plan view, the first adhesive layer includes a first projection projecting from the electrode pad radially in a direction of the periphery of the electrode pad and continuously surrounding the periphery of the electrode pad; and the second protective film is continuously to cover and contact part of the upper and side surfaces of the electrode pad, the upper and side surfaces of first projection, and the first protective film.

公开(公告)号：US09923069B1

公开(公告)日：2018-03-20

申请号：US15445358

申请日：2017-02-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ryusuke Kanomata ,  Ayanori Ikoshi ,  Hiroto Yamagiwa ,  Saichirou Kaneko ,  Manabu Yanagihara

IPC: H01L29/739 ,  H01L29/417 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  G01R31/26

CPC classification number: H01L29/41758 ,  G01R31/2642 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/8613 ,  H01L29/872

Abstract: A nitride semiconductor device includes: a stacked structure portion having an active region; first and second main electrodes extending in a first direction; and a lead-out line (second lead-out line) electrically connected to the second main electrode and extends to one side in the first direction. The first main electrode has a first tip at an end which is on the side to which the lead-out line extends. The second main electrode has a second tip at an end which is on the side to which the lead-out line extends, and has, at a second tip-side in the first direction, a tapered portion having a width in a second direction which decreases with decreasing distance to the second tip. The lead-out line has a region projecting in the second direction from the tapered portion, and the first tip does not project further in the first direction than the second tip.

公开(公告)号：US10475802B2

公开(公告)日：2019-11-12

申请号：US15812525

申请日：2017-11-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Ayanori Ikoshi ,  Manabu Yanagihara

IPC: H01L27/11517 ,  H01L29/423 ,  H01L29/778 ,  H01L29/06 ,  H01L29/417 ,  H01L29/20

Abstract: A semiconductor device includes: a substrate; a first nitride semiconductor layer and a second nitride semiconductor layer having a band gap wider than a band gap of the first nitride semiconductor layer; a first active region which includes a source electrode, a drain electrode, and a gate electrode, and has a first carrier layer located in the first nitride semiconductor layer; and a second active region which is on an extension of a long-side direction of the drain electrode and has a second carrier layer located in the first nitride semiconductor layer via an element isolation region, and a potential of the second carrier layer is substantially same as a potential of a source extraction electrode in the second active region or is an intermediate potential between a potential of a gate extraction electrode and the potential of the source extraction electrode opposite a short side of the drain electrode.

公开(公告)号：US09502549B2

公开(公告)日：2016-11-22

申请号：US14887249

申请日：2015-10-19

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Ayanori Ikoshi ,  Hiroto Yamagiwa

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/66 ,  H01L29/06 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/778 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41758 ,  H01L29/66462 ,  H01L29/7786

Abstract: A nitride semiconductor device includes the followings. A semiconductor multilayer structure is above a substrate and includes a first nitride semiconductor layer and a second nitride semiconductor layer. A source electrode, a drain electrode, and a gate electrode are on the semiconductor multilayer structure. A gate wiring line transmits a gate driving signal to gate electrodes. A first shield structure is on the semiconductor multilayer structure between the drain electrode and the gate electrode or between the drain electrode and the gate wiring line in a non-channel region where an actual current path from the drain electrode to the source electrode is not formed in the semiconductor multilayer structure. The first shield structure is a normally-off structure, suppresses a current flowing from the semiconductor multilayer structure, and is set to have a substantially same potential as a potential of the source electrode.

Abstract translation: 氮化物半导体器件包括以下。 半导体多层结构在衬底之上，并且包括第一氮化物半导体层和第二氮化物半导体层。 源电极，漏电极和栅电极在半导体多层结构上。 栅极布线将栅极驱动信号传输到栅电极。 第一屏蔽结构在漏极电极和栅电极之间的半导体层叠结构上，或者在不形成从漏电极到源电极的实际电流路径的非沟道区域中的漏电极和栅极布线之间 在半导体多层结构中。 第一屏蔽结构是常关结构，抑制从半导体多层结构流过的电流，并且被设定为具有与源电极的电位大致相同的电位。

公开(公告)号：US09818835B2

公开(公告)日：2017-11-14

申请号：US15234775

申请日：2016-08-11

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Saichirou Kaneko ,  Hiroto Yamagiwa ,  Ayanori Ikoshi ,  Masayuki Kuroda ,  Manabu Yanagihara ,  Kenichiro Tanaka ,  Tetsuyuki Fukushima

IPC: H01L29/47 ,  H01L21/28 ,  H01L29/872 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/475 ,  H01L21/28 ,  H01L29/0619 ,  H01L29/1029 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872

Abstract: In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.