Radio frequency module
    1.
    发明授权

    公开(公告)号:US11290134B2

    公开(公告)日:2022-03-29

    申请号:US17023822

    申请日:2020-09-17

    IPC分类号: H04B1/00 H01Q3/36 H04B1/04

    摘要: Opposite-side frequency bands are opened in a plurality of carrier aggregations. In a radio frequency module, a variable phase shifter differentiates a phase in a first single mode in which signals of a first frequency band are communicated and a phase in a first carrier aggregation mode and differentiates the phase in the first single mode and a phase in a second carrier aggregation mode. The variable phase shifter makes a phase difference between the phase in the first single mode and the phase in the first carrier aggregation mode different from a phase difference between the phase in the first single mode and the phase in the second carrier aggregation mode.

    Circuit module
    2.
    发明授权

    公开(公告)号:US10833023B2

    公开(公告)日:2020-11-10

    申请号:US16581911

    申请日:2019-09-25

    发明人: Reiji Nakajima

    摘要: A circuit module (100) includes an electronic component (30), a plurality of conductor posts (40), a mold layer (50) that seals a plurality of the electronic components (30) and the plurality of conductor posts (40), and a shield layer (60) on the mold layer (50). The electronic components (30) include a first electronic component (31) and second electronic components (32, 36). The plurality of conductor posts (40) includes a group of conductor posts (400) traversing between the first electronic component (31) and the second electronic components (32, 36). The shield layer (60) includes a slit (600) that, with respect to each conductor post (40) included in the group (400) of conductor posts, in a plan view, passes and extends between the conductor post (40) and the first electronic component (31), or between the conductor post (40) and the second electronic components (32, 36).

    Radio frequency circuit and communication device

    公开(公告)号:US11855594B2

    公开(公告)日:2023-12-26

    申请号:US17153299

    申请日:2021-01-20

    摘要: A radio frequency circuit includes: an amplifier circuit configured to amplify a first radio frequency signal using a first power supply voltage, and amplify a second radio frequency signal using a second power supply voltage. The first radio frequency signal is a signal in a first band for Long Term Evolution (LTE), the second radio frequency signal is a signal in a second band for 5th Generation New Radio (5G NR) or a wireless local area network (WLAN) signal, and in a state in which a first predetermined condition regarding the first radio frequency signal and the second radio frequency signal is satisfied, a value of the second power supply voltage is greater than a value of the first power supply voltage.

    Radio frequency front end module and communication device

    公开(公告)号:US11349510B2

    公开(公告)日:2022-05-31

    申请号:US17153197

    申请日:2021-01-20

    发明人: Reiji Nakajima

    IPC分类号: H04B1/04 H04B1/00

    摘要: A radio frequency (RF) front end module is capable of simultaneously transmitting an RF signal of a first communication channel in a communication band (CB) to which communication channels are allocated and an RF signal of a second communication channel of the CB. The module includes a common terminal, a power amplifier to which RF signals of the first and second communication channels are simultaneously input, a multiplexer that has a transmission filter unit and a reception filter unit connected to the common terminal and treating a transmission bandwidth of the CB and a reception bandwidth of the CB, respectively, as a pass band, and a transmission filter arranged between an output terminal of the power amplifier and an input terminal of the transmission filter unit and treating a bandwidth including the transmission bandwidth as a pass band and a bandwidth including the reception bandwidth as an attenuation band.

    High-frequency amplifier module
    5.
    发明授权

    公开(公告)号:US10218317B2

    公开(公告)日:2019-02-26

    申请号:US15682952

    申请日:2017-08-22

    发明人: Reiji Nakajima

    摘要: A high-frequency amplifier module includes a semiconductor substrate and an insulating substrate. The semiconductor substrate includes multiple emitter electrodes, each of which is coupled to the emitter of a corresponding one of high-frequency amplifying transistors. The insulating substrate includes a common ground electrode, ground terminal electrodes, and thickness-direction coupling electrodes. The common ground electrode is formed on or near the front surface of the insulating substrate, and is joined to the emitter electrodes. The ground terminal electrodes are formed on the back surface of the insulating substrate. The thickness-direction coupling electrodes couple the common ground electrode to the ground terminal electrodes.