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公开(公告)号:US11290134B2
公开(公告)日:2022-03-29
申请号:US17023822
申请日:2020-09-17
发明人: Kenji Tahara , Reiji Nakajima
摘要: Opposite-side frequency bands are opened in a plurality of carrier aggregations. In a radio frequency module, a variable phase shifter differentiates a phase in a first single mode in which signals of a first frequency band are communicated and a phase in a first carrier aggregation mode and differentiates the phase in the first single mode and a phase in a second carrier aggregation mode. The variable phase shifter makes a phase difference between the phase in the first single mode and the phase in the first carrier aggregation mode different from a phase difference between the phase in the first single mode and the phase in the second carrier aggregation mode.
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公开(公告)号:US10833023B2
公开(公告)日:2020-11-10
申请号:US16581911
申请日:2019-09-25
发明人: Reiji Nakajima
IPC分类号: H03F3/187 , H01L23/552 , H01L23/31 , H01L23/538 , H01L23/66 , H01L25/18 , H03F1/26 , H03F3/21 , H03F3/68 , H04B1/00 , H04B1/04
摘要: A circuit module (100) includes an electronic component (30), a plurality of conductor posts (40), a mold layer (50) that seals a plurality of the electronic components (30) and the plurality of conductor posts (40), and a shield layer (60) on the mold layer (50). The electronic components (30) include a first electronic component (31) and second electronic components (32, 36). The plurality of conductor posts (40) includes a group of conductor posts (400) traversing between the first electronic component (31) and the second electronic components (32, 36). The shield layer (60) includes a slit (600) that, with respect to each conductor post (40) included in the group (400) of conductor posts, in a plan view, passes and extends between the conductor post (40) and the first electronic component (31), or between the conductor post (40) and the second electronic components (32, 36).
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公开(公告)号:US11855594B2
公开(公告)日:2023-12-26
申请号:US17153299
申请日:2021-01-20
发明人: Hiroshi Kojima , Reiji Nakajima , Hirotsugu Mori
CPC分类号: H03F3/245 , H03F3/19 , H03F3/211 , H04W52/00 , H03F2200/451
摘要: A radio frequency circuit includes: an amplifier circuit configured to amplify a first radio frequency signal using a first power supply voltage, and amplify a second radio frequency signal using a second power supply voltage. The first radio frequency signal is a signal in a first band for Long Term Evolution (LTE), the second radio frequency signal is a signal in a second band for 5th Generation New Radio (5G NR) or a wireless local area network (WLAN) signal, and in a state in which a first predetermined condition regarding the first radio frequency signal and the second radio frequency signal is satisfied, a value of the second power supply voltage is greater than a value of the first power supply voltage.
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公开(公告)号:US11349510B2
公开(公告)日:2022-05-31
申请号:US17153197
申请日:2021-01-20
发明人: Reiji Nakajima
摘要: A radio frequency (RF) front end module is capable of simultaneously transmitting an RF signal of a first communication channel in a communication band (CB) to which communication channels are allocated and an RF signal of a second communication channel of the CB. The module includes a common terminal, a power amplifier to which RF signals of the first and second communication channels are simultaneously input, a multiplexer that has a transmission filter unit and a reception filter unit connected to the common terminal and treating a transmission bandwidth of the CB and a reception bandwidth of the CB, respectively, as a pass band, and a transmission filter arranged between an output terminal of the power amplifier and an input terminal of the transmission filter unit and treating a bandwidth including the transmission bandwidth as a pass band and a bandwidth including the reception bandwidth as an attenuation band.
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公开(公告)号:US10218317B2
公开(公告)日:2019-02-26
申请号:US15682952
申请日:2017-08-22
发明人: Reiji Nakajima
IPC分类号: H03F1/30 , H03F1/02 , H03F1/56 , H03F3/19 , H01L23/48 , H03F3/195 , H01L29/417 , H01L29/737
摘要: A high-frequency amplifier module includes a semiconductor substrate and an insulating substrate. The semiconductor substrate includes multiple emitter electrodes, each of which is coupled to the emitter of a corresponding one of high-frequency amplifying transistors. The insulating substrate includes a common ground electrode, ground terminal electrodes, and thickness-direction coupling electrodes. The common ground electrode is formed on or near the front surface of the insulating substrate, and is joined to the emitter electrodes. The ground terminal electrodes are formed on the back surface of the insulating substrate. The thickness-direction coupling electrodes couple the common ground electrode to the ground terminal electrodes.
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公开(公告)号:US20180190601A1
公开(公告)日:2018-07-05
申请号:US15905104
申请日:2018-02-26
发明人: Shinya Hitomi , Hidenori Obiya , Reiji Nakajima
IPC分类号: H01L23/66 , H03F3/195 , H03F3/213 , H01L23/04 , H01L23/10 , H01L23/538 , H01L23/552 , H03F3/21 , H01L25/16
CPC分类号: H01L23/66 , H01L23/04 , H01L23/055 , H01L23/10 , H01L23/16 , H01L23/5386 , H01L23/552 , H01L24/05 , H01L24/16 , H01L24/48 , H01L24/49 , H01L25/162 , H01L25/165 , H01L2223/6655 , H01L2223/6677 , H01L2224/05553 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/1421 , H01L2924/14215 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/3025 , H03F3/195 , H03F3/211 , H03F3/213 , H03F3/245 , H03F2200/111 , H03F2200/168 , H03F2200/222 , H03F2200/294 , H03F2200/411 , H03F2200/451 , H03F2203/21103 , H03F2203/21112 , H03F2203/21157 , H03H7/38 , H03H9/0542 , H03H9/0547 , H04B1/0458 , H04B1/18 , H04B1/38 , H01L2224/13099 , H01L2224/45099 , H01L2224/05599
摘要: A high-frequency module (1) includes a first substrate (101), a second substrate (102) that faces the first substrate (101), a support (103) that supports the first substrate (101) and the second substrate (102), and a plurality of high-frequency circuit components arranged in internal space formed by the first substrate (101), the second substrate (102), and the support and on both of facing principal faces of the first substrate (101) and the second substrate (102), and the plurality of high-frequency circuit components include a power amplifier element that constitutes a power amplifier circuit (16).
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公开(公告)号:US10971459B2
公开(公告)日:2021-04-06
申请号:US15905104
申请日:2018-02-26
发明人: Shinya Hitomi , Hidenori Obiya , Reiji Nakajima
IPC分类号: H01L23/66 , H04B1/38 , H04B1/04 , H04B1/18 , H03F3/24 , H01L23/055 , H01L23/16 , H01L23/04 , H01L23/10 , H01L23/538 , H01L23/552 , H01L25/16 , H03F3/195 , H03F3/21 , H03F3/213 , H03H9/05 , H01L23/00 , H03H7/38
摘要: A high-frequency module (1) includes a first substrate (101), a second substrate (102) that faces the first substrate (101), a support (103) that supports the first substrate (101) and the second substrate (102), and a plurality of high-frequency circuit components arranged in internal space formed by the first substrate (101), the second substrate (102), and the support and on both of facing principal faces of the first substrate (101) and the second substrate (102), and the plurality of high-frequency circuit components include a power amplifier element that constitutes a power amplifier circuit (16).
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公开(公告)号:US10389310B2
公开(公告)日:2019-08-20
申请号:US16145430
申请日:2018-09-28
发明人: Reiji Nakajima , Hidenori Obiya
摘要: A radio-frequency signal amplifier circuit that is used in a front-end circuit and that propagates a radio-frequency transmission signal and a radio-frequency reception signal is described. The amplifier circuit has an amplifier transistor, a bias circuit, a resistor, and an LC series resonance circuit. The LC series resonant circuit has one end that is connected to a node between the resistor and a signal input terminal, and has another end that is connected to a grounding terminal. A resonant frequency of the LC series resonance circuit is included in a difference frequency band between the frequencies of the transmission signal and the reception signal.
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公开(公告)号:US20180062591A1
公开(公告)日:2018-03-01
申请号:US15682924
申请日:2017-08-22
发明人: Reiji Nakajima
IPC分类号: H03F3/19 , H03F3/343 , H03F1/30 , H01L29/737
CPC分类号: H03F3/19 , H01L23/48 , H01L29/737 , H03F1/302 , H03F3/195 , H03F3/211 , H03F3/3432 , H03F2200/108 , H03F2200/222 , H03F2200/387 , H03F2200/451 , H03F2200/492
摘要: A semiconductor substrate includes emitter electrodes for multiple high-frequency amplifying transistors. An insulating substrate includes multiple land electrodes, ground electrodes, and multiple inductor electrodes. The land electrodes are formed on the front surface or near the front surface of the insulating substrate, and are joined to the respective emitter electrodes. The ground electrodes are formed inside the insulating substrate. Each of the inductor electrodes couples a corresponding one of the land electrodes to any of the ground electrodes in such a manner that the lengths of the coupling to the ground electrodes are individually determined.
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公开(公告)号:US20180062587A1
公开(公告)日:2018-03-01
申请号:US15682952
申请日:2017-08-22
发明人: Reiji Nakajima
CPC分类号: H03F1/302 , H01L23/48 , H01L29/41708 , H01L29/737 , H03F1/0205 , H03F1/0261 , H03F1/56 , H03F3/19 , H03F3/195 , H03F2200/222 , H03F2200/366 , H03F2200/387
摘要: A high-frequency amplifier module includes a semiconductor substrate and an insulating substrate. The semiconductor substrate includes multiple emitter electrodes, each of which is coupled to the emitter of a corresponding one of high-frequency amplifying transistors. The insulating substrate includes a common ground electrode, ground terminal electrodes, and thickness-direction coupling electrodes. The common ground electrode is formed on or near the front surface of the insulating substrate, and is joined to the emitter electrodes. The ground terminal electrodes are formed on the back surface of the insulating substrate. The thickness-direction coupling electrodes couple the common ground electrode to the ground terminal electrodes.
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