公开(公告)号：US5481136A

公开(公告)日：1996-01-02

申请号：US420901

申请日：1995-04-11

申请人： Kenichiro Kohmoto ,  Mitsuo Osada

发明人： Kenichiro Kohmoto ,  Mitsuo Osada

IPC分类号： H01L23/367 ,  H01L23/34 ,  H01L23/52

CPC分类号： H01L23/3677 ,  H01L2224/32188 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195

摘要： A semiconductor-mounting heat-sink base for use with a plastic package or flexible printed wiring board which eliminates the possibility of semiconductor or package reliability being adversely affected due to a difference in thermal expansion coefficient between the heat sink base and the semiconductor or plastic package. The heat-sink base has a semiconductor-mounting portion comprising a Cu--W or Cu--Mo composite alloy containing 5 to 25 wt. % of copper made by an infiltration process, and a portion adjacent to a plastic package which comprises a copper or copper alloy containing not less than 95% of copper.

摘要翻译： 一种与塑料封装或柔性印刷电路板一起使用的半导体安装散热器基座，其消除了由于散热器基座和半导体或塑料封装之间的热膨胀系数的差异而导致半导体或封装可靠性受到不利影响的可能性 。 散热器底座具有包含Cu-W或Cu-Mo复合合金的半导体安装部分，其含有5至25wt。 通过渗透方法制造的铜的百分比，以及与包含不少于95％铜的铜或铜合金的塑料封装相邻的部分。

公开(公告)号：US5305947A

公开(公告)日：1994-04-26

申请号：US87073

申请日：1993-07-07

申请人： Mitsuo Osada ,  Kenichiro Kohmoto

发明人： Mitsuo Osada ,  Kenichiro Kohmoto

IPC分类号： B22F5/00 ,  B22F3/11 ,  B22F7/08 ,  H01L23/14 ,  H01L23/373 ,  H01L21/48

CPC分类号： H01L23/3736 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195

摘要： A method for manufacturing heat-radiative substrates on which semiconductor devices such as ICs and transistors are mounted and packages using the substrates, wherein a plurality of CuW or CuMo composite materials obtained by the infiltration method or the mixed powder sintering method are joined together with Cu interposed therebetween. Accordingly, the remaining empty holes within the CuW or CuMo materials are filled sufficiently with Cu, allowing high-quality packages having a successful thermal characteristic to be obtained.

摘要翻译： 一种用于制造其上安装诸如IC和晶体管的半导体器件的热辐射基板的方法和使用该基板的封装，其中通过浸渗法或混合粉末烧结方法获得的多个CuW或CuMo复合材料与Cu 插入其间。 因此，CuW或CuMo材料中的剩余的空孔充满了Cu填充，从而获得具有成功的热特性的高质量封装。

公开(公告)号：US5451817A

公开(公告)日：1995-09-19

申请号：US181313

申请日：1994-01-13

申请人： Mitsuo Osada ,  Kenichiro Kohmoto

发明人： Mitsuo Osada ,  Kenichiro Kohmoto

IPC分类号： B22F5/00 ,  B22F3/11 ,  B22F7/08 ,  H01L23/14 ,  H01L23/373 ,  H01L23/58 ,  G01T1/24 ,  H01L29/66

CPC分类号： H01L23/3736 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16195

摘要： A method for manufacturing heat-radiative substrates on which semiconductor devices such as ICs and transistors are mounted and packages using the substrates, wherein a plurality of CuW or CuMo composite materials obtained by the infiltration method or the mixed powder sintering method are joined together with Cu interposed therebetween. Accordingly, the remaining empty holes within the CuW or CuMo materials are filled sufficiently with Cu, allowing high-quality packages having a successful thermal characteristic to be obtained.

摘要翻译： 一种用于制造其上安装诸如IC和晶体管的半导体器件的热辐射基板的方法和使用该基板的封装，其中通过浸渗法或混合粉末烧结方法获得的多个CuW或CuMo复合材料与Cu 插入其间。 因此，CuW或CuMo材料中的剩余的空孔充满了Cu填充，从而获得具有成功的热特性的高质量封装。

公开(公告)号：US5275782A

公开(公告)日：1994-01-04

申请号：US712253

申请日：1991-06-07

申请人： Mitsuo Osada ,  Yugaku Abe ,  Tetsuya Hayoshi

发明人： Mitsuo Osada ,  Yugaku Abe ,  Tetsuya Hayoshi

IPC分类号： H01L23/08 ,  H01L21/48 ,  H01L23/06 ,  B22F3/16 ,  B22F3/00

CPC分类号： H01L21/4817 ,  H01L23/06 ,  H01L2924/0002 ,  H01L2924/01079

摘要： A housing for a semiconductor device is improved to avoid thermal distortions. The housing is formed of an Al-Si compound material and includes a housing member having a space for holding the semiconductor device. Occlusion gas contained in the Al-Si compound material is removed so that at least any nitrogen gas remaining in occlusion after degassing is 0.1 percent by weight or less. Since the housing member substantially does not contain occlusion gas, the housing is not subject to thermal distortion even though the housing is exposed to heat in operation.

摘要翻译： 改进了用于半导体器件的外壳以避免热变形。 壳体由Al-Si复合材料形成，并且包括具有用于保持半导体器件的空间的壳体构件。 除去包含在Al-Si复合材料中的阻塞气体，使得脱气后残留的至少任何氮气为0.1重量％以下。 由于壳体构件基本上不含有阻塞气体，所以即使壳体在工作中暴露于热量，也不会发生热变形。

公开(公告)号：US5229549A

公开(公告)日：1993-07-20

申请号：US753928

申请日：1991-09-03

申请人： Akira Yamakawa ,  Mitsuo Osada ,  Nobuo Ogasa

发明人： Akira Yamakawa ,  Mitsuo Osada ,  Nobuo Ogasa

IPC分类号： H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K3/40

CPC分类号： H01L21/486 ,  H05K3/4061 ,  H05K1/0306 ,  H05K1/092 ,  H05K2201/0116 ,  H05K2203/128 ,  Y10S428/901

摘要： A ceramic electrically insulating circuit board (1) has an electrically conductive plug (4a) tightly filling a through-hole (2) formed in the circuit board (1) made of aluminum nitride including a low, up to 1% by weight at the most, content of an oxide phase as a sintering assistant. The conductive plug is formed by putting high melting point metal paste (10) into the through-hole and sintering either the board prior to the metal paste or sintering both, the board and the paste, simultaneously. Then, causing melted copper or copper alloy (11) to permeate into gaps or interstices in the sintered high-melting point metal plug to form a tight seal of the hole and good electrical contacts of the conductive plug and any circuits on both sides of the board.

摘要翻译： 陶瓷电绝缘电路板（1）具有紧密地填充形成在由氮化铝制成的电路板（1）中的通孔（2）的导电插塞（4a），其包括低至1重量％ 大多数，作为烧结助剂的氧化物相的含量。 通过将高熔点金属膏（10）放入通孔并在金属糊料之前烧结板或同时烧结板和糊料两者来形成导电插塞。 然后，使熔融的铜或铜合金（11）渗透到烧结的高熔点金属塞中的间隙或间隙中，以形成孔的紧密密封和导电塞和两侧的任何电路的良好电接触 板。

公开(公告)号：US20060246314A1

公开(公告)日：2006-11-02

申请号：US11473049

申请日：2006-06-23

申请人： Mitsuo Osada ,  Norio Hirayama ,  Tadashi Arikawa ,  Yoshinari Amano ,  Hidetoshi Maesato ,  Hidefumi Hayashi ,  Hiroshi Murai

发明人： Mitsuo Osada ,  Norio Hirayama ,  Tadashi Arikawa ,  Yoshinari Amano ,  Hidetoshi Maesato ,  Hidefumi Hayashi ,  Hiroshi Murai

IPC分类号： C22C9/00 ,  B32B15/20

CPC分类号： C22C1/0475 ,  B22F2998/10 ,  C22C27/04 ,  C22F1/08 ,  C22F1/18 ,  H01L21/4878 ,  H01L23/047 ,  H01L23/3736 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/16195 ,  Y10T428/1291 ,  B22F3/02 ,  B22F3/26 ,  B22F3/18 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a molybdenum-copper composite and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10−6/K at 30-800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

摘要翻译： 用于半导体安装散热基板的材料包括通过将熔融的铜浸渍到钼粉末压块的粉末颗粒之间的空隙中而获得的铜 - 钼轧制复合材料，以获得钼 - 铜复合材料，然后轧制复合材料。 在板材的最终轧制方向上，在30-800℃，线膨胀系数为8.3×10 -6 / K。半导体安装散热基板的材料具有优异的热 对CMC包层材料具有导电性，并且易于通过冲压机进行机械加工。 衬底材料用作陶瓷封装（11）的散热衬底（13）。

公开(公告)号：US07083759B2

公开(公告)日：2006-08-01

申请号：US10009822

申请日：2001-04-12

申请人： Mitsuo Osada ,  Norio Hirayama ,  Tadashi Arikawa ,  Yoshinari Amano ,  Hidetoshi Maesato ,  Hidefumi Hayashi ,  Hiroshi Murai

发明人： Mitsuo Osada ,  Norio Hirayama ,  Tadashi Arikawa ,  Yoshinari Amano ,  Hidetoshi Maesato ,  Hidefumi Hayashi ,  Hiroshi Murai

IPC分类号： B22F3/02 ,  B22F3/26 ,  B22F7/02 ,  C21D1/00

CPC分类号： H01L23/3733 ,  B22F2998/10 ,  C22C1/0475 ,  C22C27/04 ,  C22F1/08 ,  H01L21/4878 ,  H01L23/047 ,  H01L23/3736 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01019 ,  Y10T29/302 ,  Y10T29/49993 ,  B22F3/02 ,  B22F3/26 ,  B22F7/04 ,  H01L2924/00014

摘要： A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10−6/K at 30–800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

摘要翻译： 用于半导体安装散热基板的材料包括通过将熔融的铜浸渍到钼粉末压块的粉末颗粒之间的空隙中而获得的铜 - 钼轧制复合材料，以获得钼和铜的复合物，然后轧制复合材料。 在板材的最终轧制方向上，在30-800℃，线膨胀系数为8.3×10 -6 / K。半导体安装散热基板的材料具有优异的热 对CMC包层材料具有导电性，并且易于通过冲压机进行机械加工。 衬底材料用作陶瓷封装（11）的散热衬底（13）。

公开(公告)号：US06271585B1

公开(公告)日：2001-08-07

申请号：US09110669

申请日：1998-07-07

申请人： Mitsuo Osada ,  Akira Ichida ,  Norio Hirayama ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa

发明人： Mitsuo Osada ,  Akira Ichida ,  Norio Hirayama ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa

IPC分类号： H01L2334

CPC分类号： C22C1/0475 ,  B22F2998/10 ,  H01L21/4878 ,  H01L23/3733 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/102 ,  B22F1/0003 ,  B22F3/10 ,  B22F3/26 ,  B22F3/18 ,  H01L2924/00

摘要： A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.

摘要翻译： 散热基板包括由钼（Mo）生坯组成的Cu-Mo复合衬底，其中浸渍有20-60重量％的铜（Cu）。 优选的是，散热基板是通过反复热轧或冷轧Cu-Mo复合基板而获得的轧制板，并且轧制板不包括任何细小的空隙和不均匀浸渍的铜，即铜和钼均匀 分布在其中。

公开(公告)号：US06233311B1

公开(公告)日：2001-05-15

申请号：US09258077

申请日：1999-02-26

申请人： Masayuki Itoh ,  Koji Asahi ,  Mitsuo Osada ,  Yoshinari Amano ,  Tomohiro Takida

发明人： Masayuki Itoh ,  Koji Asahi ,  Mitsuo Osada ,  Yoshinari Amano ,  Tomohiro Takida

IPC分类号： H01J3510

CPC分类号： H01J35/10 ,  H01J2235/081 ,  H01J2235/085 ,  H01J2235/086

摘要： Provided are a high-quality and high-reliability rotary anode target for X-ray tubes, of which the mechanical strength at high temperatures is increased and which is applicable not only to low-speed rotation (at least 3,000 rpm) but also even to high-speed rotation at high temperatures, and also a method for producing it. The rotary anode has a two-layered structure to be formed by laminating an Mo alloy substrate that comprises from 0.2% by weight to 1.5% by weight of TiC with the balance of substantially Mo, and an X-ray generating layer of a W—Re alloy that overlies the substrate.

公开(公告)号：US5132779A

公开(公告)日：1992-07-21

申请号：US641499

申请日：1991-01-15

申请人： Mitsuo Osada ,  Yugaku Abe ,  Tetsuya Hayashi

发明人： Mitsuo Osada ,  Yugaku Abe ,  Tetsuya Hayashi

IPC分类号： H01L23/08 ,  H01L21/48 ,  H01L23/06

CPC分类号： H01L21/4817 ,  H01L23/06 ,  H01L2924/0002 ,  H01L2924/01079

摘要： A housing for a semiconductor device is improved to avoid thermal distortion. The housing is formed of an Al-Si compound material and includes a housing member having a space for holding the semiconductor device. Occlusion gas contained in the Al-Si compound material is removed so that at least any nitrogen gas remaining in occlusion after degassing is 0.1 percent by weight or less. Since the housing member substantially does not contain occlusion gas, the housing is not subject to thermal distortion even though the housing is exposed to heat in operation.