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    Semiconductor package and method for producing heat-radiating substrate for it
    1.
    发明授权
    Semiconductor package and method for producing heat-radiating substrate for it 有权
    半导体封装及其制造用散热基板的方法

    公开(公告)号：US06926861B2

    公开(公告)日：2005-08-09

    申请号：US10671712

    申请日：2003-09-29

    申请人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

    发明人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

    IPC分类号： B21B3/00 ,  B22F3/02 ,  B22F3/04 ,  B22F3/26 ,  C04B37/02 ,  H01L21/48 ,  H01L23/02 ,  H01L23/06 ,  H01L23/08 ,  H01L23/373 ,  B22F3/14

    CPC分类号： B22F3/045 ,  B22F3/02 ,  B22F2998/10 ,  H01L21/4871 ,  H01L21/4878 ,  H01L23/3733 ,  H01L2924/0002 ,  B22F3/26 ,  H01L2924/00

    摘要： A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates 27, 29, 31, 33, 35 and 37 are disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those plates 27, 29, 31, 33, 35 and 37 with covering the Mo powder compact with a flexible cover, such as a rubber medium 39 or the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.

    摘要翻译： 用半导体芯片安装的封装具有厚度小于0.4mm的Cu-Mo复合材料的散热基板，其通过将铜（Cu）熔体的30〜40质量％浸渍成为 钼。 散热基板是通过等静压成型制成Mo压坯，在Mo生坯上安装Cu加热，将铜浸渍到Mo生坯中得到Cu-Mo复合体，将Cu-Mo 复合成片状基材。 在等静压成型工艺中，至少两个或更多个板27,29,31,33,35和37与侧壁的内表面相邻设置，分为至少两部分，Mo粉末被填充到空间中 由这些板27,29,31,33,35和37形成，并用柔性覆盖物（例如橡胶介质39等）覆盖Mo粉末压块以制备复合材料，然后将所得复合材料压入 在其上施加有外部等静压力抵靠柔性盖，并且板沿着侧壁通过盖板滑动，从而将由此滑动的板之间的复合材料压缩成Mo压坯。

    Semiconductor package and method for producing heat-radiating substrate for it
    2.
    发明授权
    Semiconductor package and method for producing heat-radiating substrate for it 有权
    半导体封装及其制造用散热基板的方法

    公开(公告)号：US06693353B1

    公开(公告)日：2004-02-17

    申请号：US09252880

    申请日：1999-02-18

    申请人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

    发明人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

    IPC分类号： H01L2348

    CPC分类号： B22F3/045 ,  B22F3/02 ,  B22F2998/10 ,  H01L21/4871 ,  H01L21/4878 ,  H01L23/3733 ,  H01L2924/0002 ,  B22F3/26 ,  H01L2924/00

    摘要： A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates. 27, 29, 31, 33, 35 and 37 are disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those plates 27, 29, 31, 33, 35 and 37 with covering the Mo powder compact with a flexible cover, such as a rubber medium 39 or the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.

    摘要翻译： 用半导体芯片安装的封装具有厚度小于0.4mm的Cu-Mo复合材料的散热基板，其通过将铜（Cu）熔体的30〜40质量％浸渍成为 钼。 散热基板是通过等静压成型制成Mo压坯，在Mo生坯上安装Cu加热，将铜浸渍到Mo生坯中得到Cu-Mo复合体，将Cu-Mo 复合成片状基材。 在等静压成型工艺中，至少有两个以上的板。 27,29,31,33,35,37与侧壁的内表面相邻设置，分为至少两部分，Mo粉末被填充到由这些板27,29,31,33,33形成的空间中， 35和37，用橡胶介质39等柔性盖覆盖Mo粉末压块以制备复合材料，然后将所得的复合材料放入压力罐中，对其施加外部等静压 盖板，并且板沿着侧壁通过盖板滑动，从而将由此滑动的板材之间的复合材料压缩成Mo压坯。

    Radiating fin having an improved life and thermal conductivity
    5.
    发明授权
    Radiating fin having an improved life and thermal conductivity 失效
    辐射鳍具有改善的寿命和导热性

    公开(公告)号：US5448107A

    公开(公告)日：1995-09-05

    申请号：US950727

    申请日：1992-09-24

    申请人： Mitsuo Osada ,  Yugaku Abe

    发明人： Mitsuo Osada ,  Yugaku Abe

    IPC分类号： H01L23/367 ,  H01L23/373 ,  H01L23/14

    CPC分类号： H01L23/367 ,  H01L23/3736 ,  H01L2924/0002 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/1532 ,  H01L2924/16195

    摘要： A semiconductor device has a heat radiating fin attached to a semiconductor packaging device which holds a semiconductor element for externally diffusing heat generated by the semiconductor element. The fin is light in weight and has an improved thermal conductivity, since the heat radiating fin is made of an aluminum alloy or of a pure aluminum secured to a connecting member by a direct metallic bond. The connecting member is made of a Mo--Cu composite material. The fin and the connecting member are friction welded to each other to form the metallic bond at an interface between the fin and the connecting member.

    摘要翻译： 半导体器件具有附接到半导体封装器件的散热片，半导体封装器件保持半导体元件，用于从外部扩散由半导体元件产生的热量。 翅片重量轻且具有改善的导热性，因为散热片由铝合金或通过直接金属粘结固定在连接件上的纯铝制成。 连接构件由Mo-Cu复合材料制成。 翅片和连接构件彼此摩擦焊接以在翅片和连接构件之间的界面处形成金属结合。

    Process for producing sintered ferrous alloys
    6.
    发明授权
    Process for producing sintered ferrous alloys 失效
    生产烧结铁合金的方法

    公开(公告)号：US4614638A

    公开(公告)日：1986-09-30

    申请号：US805413

    申请日：1985-12-06

    申请人： Nobuhito Kuroishi ,  Mitsuo Osada ,  Akio Hara

    发明人： Nobuhito Kuroishi ,  Mitsuo Osada ,  Akio Hara

    IPC分类号： B22F3/10 ,  B22F3/24 ,  C22C33/02 ,  B22F1/00

    CPC分类号： C22C33/0257 ,  B22F3/101 ,  B22F3/24 ,  C22C33/0235

    摘要： A method for producing a sintered ferrous alloy containing at least one alloying element whose standard free energy for oxide formation at 1,000.degree. C. is 11,000 cal/g mol O.sub.2 or less is described. The method comprises a sintering procedure comprising steps of elevating the temperature of a green compact comprising said at least one alloying element, sintering it in a sintering furnace and cooling it, wherein the pressure in the sintering furnace is maintained at between about 0.2 and 500 Torr by supplying a reducing gas during at least a part of the sintering procedure under reduced pressure.

    摘要翻译： 描述了一种含有至少一种合金元素的烧结铁合金的制造方法，其中在1000℃下形成氧化物的标准自由能为11000cal / g molO 2以下。 该方法包括一个包括以下步骤的烧结步骤：提高包含所述至少一种合金元素的生坯的温度，在烧结炉中烧结并冷却，其中烧结炉中的压力保持在约0.2和500托之间 通过在至少一部分烧结过程中在减压下供应还原气体。

    Electric contact materials
    7.
    发明授权
    Electric contact materials 失效
    电接触材料

    公开(公告)号：US4457780A

    公开(公告)日：1984-07-03

    申请号：US367603

    申请日：1982-04-12

    申请人： Mitsuo Osada ,  Nobuhito Kuroishi ,  Yoshinari Amano ,  Akira Fukui

    发明人： Mitsuo Osada ,  Nobuhito Kuroishi ,  Yoshinari Amano ,  Akira Fukui

    IPC分类号： C22C32/00 ,  H01H1/0233 ,  B22F3/00

    CPC分类号： C22C32/0084 ,  H01H1/0233

    摘要： The invention relates to electric contact materials for use in switches, such as moulded circuit breakers, air circuit breakers, magnetic switches, etc.The electric contact materials comprise 5-60 weight % iron group metals, 1-11 weight % graphite, 5-70 weight % refractory materials, and the residual part consisting of silver, said refractory materials being held in the state of dispersion in the iron group metals and/or silver, thereby providing welding resistance, wear resistance, and insulation resistance as well as high practical utility of low temperature rise.

    摘要翻译： 本发明涉及用于开关的电接触材料，例如模制断路器，空气断路器，磁性开关等。电接触材料包括5-60重量％的铁族金属，1-11重量％的石墨， 70重量％的耐火材料和由银组成的残留部分，所述耐火材料保持在铁族金属和/或银中的分散状态，从而提供耐焊接性，耐磨性和绝缘电阻以及高实用性 低温升高的效用

    Housing for semiconductor device
    8.
    发明授权
    Housing for semiconductor device 失效
    半导体器件外壳

    公开(公告)号：US5275782A

    公开(公告)日：1994-01-04

    申请号：US712253

    申请日：1991-06-07

    申请人： Mitsuo Osada ,  Yugaku Abe ,  Tetsuya Hayoshi

    发明人： Mitsuo Osada ,  Yugaku Abe ,  Tetsuya Hayoshi

    IPC分类号： H01L23/08 ,  H01L21/48 ,  H01L23/06 ,  B22F3/16 ,  B22F3/00

    CPC分类号： H01L21/4817 ,  H01L23/06 ,  H01L2924/0002 ,  H01L2924/01079

    摘要： A housing for a semiconductor device is improved to avoid thermal distortions. The housing is formed of an Al-Si compound material and includes a housing member having a space for holding the semiconductor device. Occlusion gas contained in the Al-Si compound material is removed so that at least any nitrogen gas remaining in occlusion after degassing is 0.1 percent by weight or less. Since the housing member substantially does not contain occlusion gas, the housing is not subject to thermal distortion even though the housing is exposed to heat in operation.

    摘要翻译： 改进了用于半导体器件的外壳以避免热变形。 壳体由Al-Si复合材料形成，并且包括具有用于保持半导体器件的空间的壳体构件。 除去包含在Al-Si复合材料中的阻塞气体，使得脱气后残留的至少任何氮气为0.1重量％以下。 由于壳体构件基本上不含有阻塞气体，所以即使壳体在工作中暴露于热量，也不会发生热变形。

    Ceramic circuit board and a method of manufacturing the ceramic circuit board
    9.
    发明授权
    Ceramic circuit board and a method of manufacturing the ceramic circuit board 失效
    陶瓷电路板和陶瓷电路板的制造方法

    公开(公告)号：US5229549A

    公开(公告)日：1993-07-20

    申请号：US753928

    申请日：1991-09-03

    申请人： Akira Yamakawa ,  Mitsuo Osada ,  Nobuo Ogasa

    发明人： Akira Yamakawa ,  Mitsuo Osada ,  Nobuo Ogasa

    IPC分类号： H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K3/40

    CPC分类号： H01L21/486 ,  H05K3/4061 ,  H05K1/0306 ,  H05K1/092 ,  H05K2201/0116 ,  H05K2203/128 ,  Y10S428/901

    摘要： A ceramic electrically insulating circuit board (1) has an electrically conductive plug (4a) tightly filling a through-hole (2) formed in the circuit board (1) made of aluminum nitride including a low, up to 1% by weight at the most, content of an oxide phase as a sintering assistant. The conductive plug is formed by putting high melting point metal paste (10) into the through-hole and sintering either the board prior to the metal paste or sintering both, the board and the paste, simultaneously. Then, causing melted copper or copper alloy (11) to permeate into gaps or interstices in the sintered high-melting point metal plug to form a tight seal of the hole and good electrical contacts of the conductive plug and any circuits on both sides of the board.

    摘要翻译： 陶瓷电绝缘电路板（1）具有紧密地填充形成在由氮化铝制成的电路板（1）中的通孔（2）的导电插塞（4a），其包括低至1重量％ 大多数，作为烧结助剂的氧化物相的含量。 通过将高熔点金属膏（10）放入通孔并在金属糊料之前烧结板或同时烧结板和糊料两者来形成导电插塞。 然后，使熔融的铜或铜合金（11）渗透到烧结的高熔点金属塞中的间隙或间隙中，以形成孔的紧密密封和导电塞和两侧的任何电路的良好电接触 板。