公开(公告)号：US5275782A

公开(公告)日：1994-01-04

申请号：US712253

申请日：1991-06-07

申请人： Mitsuo Osada ,  Yugaku Abe ,  Tetsuya Hayoshi

发明人： Mitsuo Osada ,  Yugaku Abe ,  Tetsuya Hayoshi

IPC分类号： H01L23/08 ,  H01L21/48 ,  H01L23/06 ,  B22F3/16 ,  B22F3/00

CPC分类号： H01L21/4817 ,  H01L23/06 ,  H01L2924/0002 ,  H01L2924/01079

摘要： A housing for a semiconductor device is improved to avoid thermal distortions. The housing is formed of an Al-Si compound material and includes a housing member having a space for holding the semiconductor device. Occlusion gas contained in the Al-Si compound material is removed so that at least any nitrogen gas remaining in occlusion after degassing is 0.1 percent by weight or less. Since the housing member substantially does not contain occlusion gas, the housing is not subject to thermal distortion even though the housing is exposed to heat in operation.

摘要翻译： 改进了用于半导体器件的外壳以避免热变形。 壳体由Al-Si复合材料形成，并且包括具有用于保持半导体器件的空间的壳体构件。 除去包含在Al-Si复合材料中的阻塞气体，使得脱气后残留的至少任何氮气为0.1重量％以下。 由于壳体构件基本上不含有阻塞气体，所以即使壳体在工作中暴露于热量，也不会发生热变形。