公开(公告)号：US20230026891A1

公开(公告)日：2023-01-26

申请号：US17758481

申请日：2020-05-22

Applicant: Mitsubishi Electric Corporation

Inventor： Yoshihiro TSUKAHARA ,  Makoto KIMURA

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/13 ,  H01L23/538 ,  H01L25/065 ,  H01L25/00

Abstract: A semiconductor device includes a multi-layer board which a wiring pattern and a grounding pattern are formed. A plurality of semiconductor elements are mounted on the multi-layer board. An insulating sealing member is provided on the multi-layer board and is covering the plurality of semiconductor elements. A metal film is provided on the insulating sealing member. An in-groove metal is provided in contact with a plurality of grooves extending from a side-surface upper end of the insulating sealing member to a side-surface lower end of the multi-layer board. An in-hole metal is provided in an inner wall of a hole penetrating through the insulating sealing member and is extending to the multi-layer board. The in-hole metal is contacting with the metal film and the grounding pattern.

公开(公告)号：US20210075375A1

公开(公告)日：2021-03-11

申请号：US17094451

申请日：2020-11-10

Applicant: Mitsubishi Electric Corporation

Inventor： Eigo KUWATA ,  Makoto KIMURA ,  Jun KAMIOKA

IPC: H03F1/18 ,  H03F3/60 ,  H03F3/68

Abstract: A high-efficiency amplifier is configured so that short stubs are provided in a line between a first substrate end and a second substrate end of a substrate, and among the short stubs, short stubs provided at locations other than both ends of the line include two short stubs and which are adjacent to each other, and which are provided at locations at which the two short stubs are to be electromagnetically coupled to each other.

公开(公告)号：US20210328557A1

公开(公告)日：2021-10-21

申请号：US16625369

申请日：2017-07-14

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Dai NINOMIYA ,  Eigo KUWATA ,  Kazuhiko NAKAHARA ,  Makoto KIMURA ,  Yoshitaka KAMO

IPC: H03F1/56 ,  H03F3/19

Abstract: A MIM capacitor is included in any one or more of a first matching circuit and a second matching circuit. The mat capacitor performs impedance matching of a fundamental wave included in a high-frequency signal with a transmission line, and forms a short-circuit point for a harmonic included in the high-frequency signal at a connection point with the transmission line.

公开(公告)号：US20210134733A1

公开(公告)日：2021-05-06

申请号：US16491767

申请日：2018-02-22

Applicant: Mitsubishi Electric Corporation

Inventor： Yukinobu TARUI ,  Makoto KIMURA ,  Katsumi MIYAWAKI ,  Kiyoshi ISHIDA ,  Hiroaki MATSUOKA

IPC: H01L23/552 ,  H01L23/66 ,  H01L23/36 ,  H01L23/538

Abstract: A microwave device includes: a multilayer resin substrate being a first multilayer resin substrate; an IC being a radio frequency circuit provided on the multilayer resin substrate and electrically connected to the multilayer resin substrate; a heat spreader provided on a side opposite to the multilayer resin substrate across the IC, and in contact with the IC; a mold resin covering the periphery of the IC and the heat spreader; and a conductive film covering the mold resin and the heat spreader, where an inner side of the conductive film is in contact with the heat spreader, and the conductive film is electrically connected to a ground via hole of the multilayer resin substrate.

公开(公告)号：US20240266715A1

公开(公告)日：2024-08-08

申请号：US18562837

申请日：2021-05-26

Applicant: Mitsubishi Electric Corporation

Inventor： Makoto KIMURA ,  Yukinobu TARUI ,  Shunichi ABE ,  Takumi NAGAMINE

IPC: H01Q1/22 ,  H01L23/00 ,  H01L23/367 ,  H01L23/552 ,  H01L25/10 ,  H01Q21/06

CPC classification number: H01Q1/2283 ,  H01L23/367 ,  H01L25/105 ,  H01Q21/065 ,  H01L23/552 ,  H01L24/16 ,  H01L2224/16227

Abstract: A microwave module includes a plurality of microwave devices and a microwave module substrate. Each of the plurality of microwave devices exchanges a signal with a corresponding one of a plurality of antenna elements. The microwave module substrate includes a mounting surface on which the plurality of microwave devices are mounted. The microwave module substrate is electrically connected to each of the plurality of antenna elements. The mounting surface is perpendicular to a plane surface on which the plurality of antenna elements are arrayed.

公开(公告)号：US20210233865A1

公开(公告)日：2021-07-29

申请号：US17263912

申请日：2018-09-12

Applicant: Mitsubishi Electric Corporation

Inventor： Yukinobu TARUI ,  Makoto KIMURA ,  Katsumi MIYAWAKI ,  Kiyoshi ISHIDA ,  Hiroaki MATSUOKA

IPC: H01L23/552 ,  H01Q1/22 ,  H01Q1/02 ,  H03F3/24 ,  H01L23/66 ,  H01L23/433 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065

Abstract: A microwave device includes: a first multilayer resin substrate including a ground via hole; a semiconductor substrate provided at the first multilayer resin substrate and including a high frequency circuit; and a conductive heat spreader provided at an opposite face of the semiconductor substrate from a face of the semiconductor substrate facing the first multilayer resin substrate. The microwave device includes: a resin provided over the first multilayer resin substrate and covering the semiconductor substrate and the heat spreader such that an opposite face of the heat spreader from a face of the heat spreader facing the semiconductor substrate is exposed as an exposed face; and a conductive film covering the resin and the heat spreader and touching the exposed face. The semiconductor substrate includes a ground through hole extending through the semiconductor substrate. The conductive film is electrically connected to the ground via hole via the heat spreader and the ground through hole.

公开(公告)号：US20200058598A1

公开(公告)日：2020-02-20

申请号：US16491620

申请日：2018-04-19

Applicant: Mitsubishi Electric Corporation

Inventor： Kiyoshi ISHIDA ,  Hidenori ISHIBASHI ,  Makoto KIMURA

IPC: H01L23/552 ,  H01L23/495 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48

Abstract: A semiconductor device includes a single lead frame, a semiconductor element, and a mold material. The semiconductor element is joined onto one main surface of the lead frame. The lead frame includes a die-attach portion, a signal terminal portion, and a ground terminal portion. The die-attach portion, the signal terminal portion, and the ground terminal portion are disposed directly below the mold material so as to be arranged in a direction along one main surface. A groove portion is provided by partially removing the lead frame so as to allow the groove portion to pass therethrough, the groove portion being provided between the die-attach portion and the ground terminal portion adjacent to each other in the lead frame and between the signal terminal portion and the ground terminal portion adjacent to each other in the lead frame.

公开(公告)号：US20180351595A1

公开(公告)日：2018-12-06

申请号：US15780288

申请日：2016-12-07

Applicant: Mitsubishi Electric Corporation

Inventor： Yukinobu TARUI ,  Makoto KIMURA ,  Isamu RYOKAWA ,  Akimichi HIROTA ,  Hiroyuki MIZUTANI

IPC: H04B1/38 ,  H05K9/00 ,  H05K1/02 ,  H01L23/66

Abstract: A microwave module includes an RF device and a multilayer resin substrate. The device includes a metal cover covering at least an internal circuit. The substrate includes a first end face on a side of the device, a second end face on a side opposite to the first end face, a signal through-holes surrounding the circuit and connected to the circuit, ground through-holes surrounding the signal through-holes and connected to the cover, a first surface ground provided on the first end face and connected to the cover, an inner layer surface ground connected to ground through-holes, and an RF transmission line surrounded by the ground through-holes, the first surface ground, and the inner layer surface ground, and connected to the signal through-hole.

公开(公告)号：US20180158794A1

公开(公告)日：2018-06-07

申请号：US15575522

申请日：2016-06-01

Applicant: Mitsubishi Electric Corporation

Inventor： Kiyoshi ISHIDA ,  Makoto KIMURA ,  Katsumi MIYAWAKI ,  Yukinobu TARUI ,  Keiko SHIRAFUJI

IPC: H01L23/00 ,  H01L23/04

CPC classification number: H01L24/48 ,  H01L21/50 ,  H01L23/04 ,  H01L23/055 ,  H01L23/10 ,  H01L24/73 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/16152 ,  H01L2924/163 ,  H01L2924/1631 ,  H01L2924/3025 ,  H01L2224/45099

Abstract: A semiconductor device includes a substrate, a semiconductor element, a ground pad, an insulating coating member, a conductive bonding member, and a conductive cap. The inner peripheral end of a bottom of the conductive cap is disposed at a side close to the inner periphery of the insulating coating member relative to the outer peripheral end of the insulating coating member. The bottom has a shape in which the distance between the main surface and itself decreases continuously from its outer peripheral end toward its inner peripheral end.